公开(公告)号：KR101257336B1

公开(公告)日：2013-04-23

申请号：KR1020120038419

申请日：2012-04-13

Applicant: 유비머트리얼즈주식회사

Inventor： 박재근 ,  이곤섭 ,  박진형 ,  임재형 ,  조종영 ,  황희섭 ,  최호

IPC: C09K3/14 ,  H01L21/304

CPC classification number: C23F1/14 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/3212 ,  H01L21/7684

Abstract: PURPOSE: Slurry for polishing tungsten is provided to improve polishing selection ratio of a tungsten and insulative film by using titanium oxide as an abrasive. CONSTITUTION: Slurry for polishing tungsten comprises an abrasive(300) for polishing tungsten; and an oxidation accelerator for accelerating the formation of oxide. The abrasive comprises a titanium dioxide particle. A polishing method of a substrate comprises a step of arranging a substrate(100) on which a tungsten layer(120) is formed; a step of arranging a primary slurry including a titanium oxide and oxidation accelerator; and a step of polishing the tungsten layer while supplying a primary slurry on a substrate. On the upper surface of the tungsten layer, a tungsten oxide layer is formed.

Abstract translation: 目的：提供用于抛光钨的浆料，以通过使用氧化钛作为研磨剂来改善钨和绝缘膜的抛光选择比。 构成：用于抛光钨的浆料包括用于抛光钨的磨料（300） 和用于加速氧化物形成的氧化促进剂。 研磨剂包含二氧化钛颗粒。 衬底的抛光方法包括布置其上形成有钨层（120）的衬底（100）的步骤; 布置包括氧化钛和氧化促进剂的一次浆料的步骤; 以及在基板上供给一次浆料的同时研磨钨层的步骤。 在钨层的上表面上形成氧化钨层。

公开(公告)号：KR1020130019332A

公开(公告)日：2013-02-26

申请号：KR1020110117872

申请日：2011-11-11

Applicant: 유비머트리얼즈주식회사

Inventor： 박재근 ,  박진형 ,  임재형 ,  조종영 ,  최호 ,  황희섭

IPC: C09K3/14

CPC classification number: C23F1/30 ,  C09G1/02 ,  C23F3/06

Abstract: PURPOSE: A slurry composition for chemical mechanical polishing is provided to prevent the slurry discoloration problem, to have excellent etching selection ratio between metallic layers and to be applied to a chemical mechanical polishing process. CONSTITUTION: A slurry composition for chemical mechanical polishing comprises an abrasive and an abrasive accelerator. The abrasive comprises colloid silica which is dispersed in ultrapure water. The abrasive accelerator comprises 0.5-2 weight% hydrogen peroxide liquid, 0.05-1 weight% of ammonium persulfate, 0.01-0.1 weight% of iron nitrate. The content of the colloid silica is 2-4 weight%. The etching selection ratio of the tungsten and nitride titanium is 1:1.5-2. The pH of the composition is 2-4.

Abstract translation: 目的：提供用于化学机械抛光的浆料组合物，以防止浆料变色问题，在金属层之间具有优异的蚀刻选择比，并应用于化学机械抛光工艺。 构成：用于化学机械抛光的浆料组合物包括研磨剂和磨料加速剂。 研磨剂包括分散在超纯水中的胶体二氧化硅。 研磨剂包括0.5-2重量％的过氧化氢液体，0.05-1重量％的过硫酸铵，0.01-0.1重量％的硝酸铁。 胶体二氧化硅的含量为2-4重量％。 钨和氮化钛的蚀刻选择比为1：1.5-2。 组合物的pH为2-4。

公开(公告)号：KR101335946B1

公开(公告)日：2013-12-04

申请号：KR1020110117872

申请日：2011-11-11

Applicant: 유비머트리얼즈주식회사

Inventor： 박재근 ,  박진형 ,  임재형 ,  조종영 ,  최호 ,  황희섭

IPC: C09K3/14

CPC classification number: C23F1/30 ,  C09G1/02 ,  C23F3/06

Abstract: 본 발명은 연마제와 연마촉진체를 포함하는 텅스텐 연마용 CMP슬러리 조성물로서, 상기 연마제는 초순수에 분산된 콜로이드 실리카를 포함하며, 상기 연마촉진제는 과산화수소수, 암모늄퍼설페이트 및 질산철을 포함하며, 상기 슬러리 조성물은 슬러리 변색 문제가 발생하지 않으며, 식각 선택비가 우수하여 CMP 공정에 적용할 수 있다.