公开(公告)号：US09425346B2

公开(公告)日：2016-08-23

申请号：US14156521

申请日：2014-01-16

Applicant: 1366 Technologies, Inc. ,  Massachusetts Institute of Technology

Inventor： Benjamin F. Polito ,  Holly G. Gates ,  Emanuel M. Sachs

IPC: H01L31/0236 ,  G03F7/00 ,  B29C59/02 ,  B29C43/36 ,  H01L31/18 ,  B29C43/02 ,  B29C43/22 ,  B82Y10/00 ,  B82Y40/00 ,  B29C43/46

CPC classification number: H01L31/182 ,  B29C43/021 ,  B29C43/222 ,  B29C59/02 ,  B29C2043/025 ,  B29C2043/3634 ,  B29C2043/3652 ,  B29C2043/465 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

Abstract: Patterned substrates for photovoltaic and other uses are made by pressing a flexible stamp upon a thin layer of resist material, which covers a substrate, such as a wafer. The resist changes phase or becomes flowable, flowing away from locations of impression, revealing the substrate, which is subjected to some shaping process. A typical substrate is silicon, and a typical resist is a wax. Workpiece textures include extended grooves, discrete, spaced apart pits, and combinations and intermediates thereof. Platen or rotary patterning apparatus may be used. Rough and irregular workpiece substrates may be accommodated by extended stamp elements. Resist may be applied first to the workpiece, the stamp, or substantially simultaneously, in discrete locations, or over the entire surface of either. The resist dewets the substrate completely where desired.

Abstract translation: 用于光伏和其他用途的图案化基板是通过将柔性印模压在覆盖诸如晶片的基底的抗蚀剂材料薄层上而制成的。 抗蚀剂改变相位或变得可流动，从印模的位置流出，露出经受一些成形过程的基底。 典型的基底是硅，典型的抗蚀剂是蜡。 工件纹理包括延伸凹槽，离散的，间隔开的凹坑，以及它们的组合和中间体。 可以使用压板或旋转图案形成装置。 粗糙和不规则的工件衬底可以由延长的印模元件容纳。 抗蚀剂可以首先施加到工件，印模或基本上同时地在离散的位置，或者在两者的整个表面上。 抗蚀剂在需要时完全将基材脱模。

公开(公告)号：US20150037922A1

公开(公告)日：2015-02-05

申请号：US14345675

申请日：2012-09-22

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： Emanuel M. Sachs

IPC: H01L31/18

CPC classification number: H01L31/18 ,  B29C33/40 ,  B29C33/42 ,  B29C33/424 ,  B29C43/021 ,  B29C2033/426 ,  B29C2043/025 ,  B29C2059/023 ,  B81C99/0085 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp. If the resist layer as deposited is somewhat thicker than the targeted amount, it will simply result in a smaller gap between resist and tool. The presence of a continuous gap assures that no pressure builds under the stamp. Thus, the force on the protrusions i determined only by the pressure above the stamp and is well controlled, resulting in well-controlled hole sizes. The gap prevents resist from being pumped entirely out of any one region, and thus prevents any regions from being uncovered of resist. The stamp can be pulsed in its contact with the substrate, repeatedly deforming the indenting protrusions. Several pulses clears away any scum layer better than does a single press, as measured by an etch test comparison of the degree to which a normal etch for a normal duration etches away substrate material. A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving a gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp.

Abstract translation: 将图案赋予基板上的可流动抗蚀剂材料的方法需要提供如此薄的抗蚀剂层，使得在印模楔入过程中，抗蚀剂不会完全填充基板与楔形凸起之间的印模的底表面之间的空间，留下 差距在其间。 在抗蚀剂和印模的延伸表面之间留有间隙。 如果沉积的抗蚀剂层比目标量稍厚一些，则将简单地导致抗蚀剂和工具之间的较小的间隙。 连续间隙的存在确保印章下没有压力。 因此，突起上的力i仅由压力上方的压力确定并且被良好地控制，导致良好控制的孔尺寸。 间隙防止抗蚀剂完全从任何一个区域泵出，从而防止任何区域不被抗蚀剂覆盖。 印模可以与基板接触地脉动，使压痕突起重复变形。 几个脉冲比单次压机更好地清除任何浮渣层，如通过蚀刻测试比较正常蚀刻对正常时间蚀刻掉的衬底材料的程度所测量的。 将图案赋予基板上的可流动抗蚀剂材料的方法需要提供如此薄的抗蚀剂层，使得在印模楔入过程中，抗蚀剂不会完全填充基板与楔形凸起之间的印模的底表面之间的空间，留下 在它们之间的差距。 在抗蚀剂和印模的延伸表面之间留有间隙。

公开(公告)号：US20140367887A1

公开(公告)日：2014-12-18

申请号：US14345681

申请日：2012-09-22

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： Emanuel M. Sachs ,  Peter E. Kane ,  Holly G. Gates ,  Damian W. Harris ,  Benjamin F. Polito ,  Hector A. Inirio

IPC: B29B13/02

Abstract: A workpiece is transported using a porous belt, which belt delivers a workpiece to a chuck, upon which the workpiece is held by vacuum. The belt can be porous PTFE. A flexible stamp is preheated, before it is applied to a workpiece, by drawing the stamp toward a heated plate, for instance by vacuum.

Abstract translation: 使用多孔带输送工件，该带将工件输送到卡盘，工件通过真空保持在该卡盘上。 带可以是多孔PTFE。 例如通过真空将柔性印模预先加热到被加热板之前，在将其印刷到工件之前进行预热。

公开(公告)号：TW201349332A

公开(公告)日：2013-12-01

申请号：TW102100397

申请日：2013-01-07

Applicant: 1366科技公司 ,  1366 TECHNOLOGIES INC.

Inventor： 塔拉索夫 梵迪密爾S ,  TARASOV, VLADIMIR S. ,  愛爾森 阿里 ,  ERSEN, ALI ,  史騰 艾力克 ,  STERN, ERIC ,  克利斯席萬 傑森M ,  CRISCIONE, JASON M. ,  莎栩思 伊繆爾M ,  SACHS, EMANUEL M.

IPC: H01L21/3063

CPC classification number: H01L31/02363 ,  H01L31/0248 ,  Y02E10/50

Abstract: 方法係藉由選擇性改變光阱空穴特徵底部之反射特性而增強矽晶圓內之光吸收。光阱特徵之修改包括：深化底部、增大底部曲率及使底部粗糙化，皆經由蝕刻來實現。亦可藉由在空穴特徵底部選擇性添加材料來修改。同一晶圓中不同類型之特徵可以不同方式處理。一些特徵會接受改善光阱之處理而另一特徵故意排斥該處理。一些特徵可深化，一些特徵粗糙化，一些特徵兩者兼具。選擇性達成此舉無需對準。遮罩步驟由於原位軟化及變形而達成與預先形成之光阱特徵之自對準。

Abstract in simplified Chinese: 方法系借由选择性改变光阱空穴特征底部之反射特性而增强硅晶圆内之光吸收。光阱特征之修改包括：深化底部、增大底部曲率及使底部粗糙化，皆经由蚀刻来实现。亦可借由在空穴特征底部选择性添加材料来修改。同一晶圆中不同类型之特征可以不同方式处理。一些特征会接受改善光阱之处理而另一特征故意排斥该处理。一些特征可深化，一些特征粗糙化，一些特征两者兼具。选择性达成此举无需对准。遮罩步骤由于原位软化及变形而达成与预先形成之光阱特征之自对准。

公开(公告)号：TW201324582A

公开(公告)日：2013-06-16

申请号：TW101134892

申请日：2012-09-24

Applicant: 1366科技公司 ,  1366 TECHNOLOGIES INC.

Inventor： 莎栩思 伊繆爾M ,  SACHS, EMANUEL M. ,  凱恩 彼得E ,  KANE, PETER E. ,  蓋特斯 荷利G ,  GATES, HOLLY G. ,  哈利斯 戴密安W ,  HARRIS, DAMIAN W. ,  玻利多 班傑明F ,  POLITO, BENJAMIN F. ,  伊尼利歐 郝克特A ,  INIRIO, HECTOR A.

IPC: H01L21/02 ,  H01L21/677

CPC classification number: B29B13/02 ,  B29C59/02 ,  B29C2059/023 ,  G03F7/0002

Abstract: 工件係使用多小孔皮帶來運送，該皮帶將工件輸送至夾頭，該工件係藉由真空固持至該夾頭上。該皮帶可為多小孔PTFE。在可撓打印機被施加至一工件之前，該可撓打印機係藉由牽引該打印機朝向一加熱板、例如藉由真空而被預先加熱。藉由首先使該打印機的中心接觸至該工件的中心，且接著造成一接觸線由此共用的中心徑向地往外移動，該可撓打印機被施加至一工件，藉此防止空氣被捕集於該打印機及該工件之間。該打印機能藉由空氣壓力被膨大。該打印機能在佈圖之後被由該工件移除，首先藉由在該工件的外側邊緣及角落剝離該打印機遠離該工件，且接著逐漸地往內朝向該工件及該打印機之共有中心。工作站具有與毗連該工件用之位置隔開的間隔件，該工件係藉由差動氣壓鎖固至該工作站。該等間隔件具有一大約與該工件共平面、或較佳地係比該工件稍微更高的表面，以藉由造成該打印機由該工件橋接至該等間隔件、而非覆蓋環繞著該工件之邊緣，防止該打印機密封環繞著該工件之邊緣。在可撓打印機被加熱之前預先拉緊該可撓打印機，故該打印機於加熱及冷卻時不會改變尺寸，但相對地，該打印機經歷內部應力之改變。如此，於該打印機上之圖案的空間尺寸保持恆定，而不管其溫度。以此一使得其外部周邊總是在一溫度的方式加熱及冷卻該工件，該溫度係等於或高於該工件的中心之溫度。這防止可使該工件破裂的應力。加熱可為藉由一夾頭，該夾頭具有連接至中心及周邊導管的徑向通道；及藉由使熱水通過至該等周邊導管，且接著沿著該等徑向通道，及經過該中心導管離開該夾頭。冷卻能藉由在該相反方向中傳送較冷的水而被完成。

Abstract in simplified Chinese: 工件系使用多小孔皮带来运送，该皮带将工件输送至夹头，该工件系借由真空固持至该夹头上。该皮带可为多小孔PTFE。在可挠打印机被施加至一工件之前，该可挠打印机系借由牵引该打印机朝向一加热板、例如借由真空而被预先加热。借由首先使该打印机的中心接触至该工件的中心，且接着造成一接触线由此共享的中心径向地往外移动，该可挠打印机被施加至一工件，借此防止空气被捕集于该打印机及该工件之间。该打印机能借由空气压力被膨大。该打印机能在布图之后被由该工件移除，首先借由在该工件的外侧边缘及角落剥离该打印机远离该工件，且接着逐渐地往内朝向该工件及该打印机之共有中心。工作站具有与毗连该工件用之位置隔开的间隔件，该工件系借由差动气压锁固至该工作站。该等间隔件具有一大约与该工件共平面、或较佳地系比该工件稍微更高的表面，以借由造成该打印机由该工件桥接至该等间隔件、而非覆盖环绕着该工件之边缘，防止该打印机密封环绕着该工件之边缘。在可挠打印机被加热之前预先拉紧该可挠打印机，故该打印机于加热及冷却时不会改变尺寸，但相对地，该打印机经历内部应力之改变。如此，于该打印机上之图案的空间尺寸保持恒定，而不管其温度。以此一使得其外部周边总是在一温度的方式加热及冷却该工件，该温度系等于或高于该工件的中心之温度。这防止可使该工件破裂的应力。加热可为借由一夹头，该夹头具有连接至中心及周边导管的径向信道；及借由使热水通过至该等周边导管，且接着沿着该等径向信道，及经过该中心导管离开该夹头。冷却能借由在该相反方向中发送较冷的水而被完成。

公开(公告)号：US10770613B2

公开(公告)日：2020-09-08

申请号：US16559971

申请日：2019-09-04

Applicant: 1366 TECHNOLOGIES INC.

Inventor： Ralf Jonczyk ,  Brian D. Kernan ,  G.D. Stephen Hudelson ,  Adam M. Lorenz ,  Emanuel M. Sachs

IPC: H01L31/06 ,  H01L31/00 ,  H01L31/062 ,  H01L31/113 ,  H01L31/18 ,  H01L31/0224 ,  C30B11/00 ,  C30B19/12 ,  C30B28/04 ,  C30B29/06 ,  C30B31/02 ,  C30B31/04 ,  C30B35/00 ,  H01L21/00 ,  H01L31/068 ,  H01L31/056 ,  H01L31/0216 ,  H01L31/0288

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

公开(公告)号：US20200251355A1

公开(公告)日：2020-08-06

申请号：US16757497

申请日：2018-10-23

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： Robertus Antonius STEEMAN

IPC: H01L21/673 ,  H01L21/677 ,  H01L31/0352 ,  H01L31/18 ,  B65G47/90

Abstract: A semiconductor wafer is as wide as the industry standard width A (presently 156 mm+/−1 mm) and is longer than the industry standard A by at least 1 mm and as much as the standard equipment can reasonably accommodate, presently approximately 3-20 mm and potentially longer, thus, gaining significant additional surface area for sunlight absorption. Modules may be composed of a plurality of such larger wafers. Such wafers can be processed in conventional processing equipment that has a wafer retaining portion of industry standard size A and a configuration that also accommodates a wafer with a perpendicular second edge longer than A by at least 1 and typically 3-20 mm. Wet bench carriers and transport and inspection stations can be so used.

公开(公告)号：US09815072B2

公开(公告)日：2017-11-14

申请号：US14349087

申请日：2012-10-12

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： Guy M. Danner ,  Vladimir S. Tarasov ,  Peter E. Kane ,  Peter G. Madden ,  Holly G. Gates ,  Emanuel M. Sachs

IPC: B05B17/04 ,  B05B5/03 ,  B05B5/16 ,  B05B7/00 ,  H01L21/00 ,  B05B5/00 ,  B05B13/02 ,  B05B5/08 ,  H01L21/67 ,  H01L21/677 ,  G03F7/00 ,  B05D1/06 ,  B82Y10/00 ,  B82Y40/00 ,  B05B15/04 ,  B05D1/04

CPC classification number: B05B5/001 ,  B05B5/005 ,  B05B5/087 ,  B05B7/0012 ,  B05B12/16 ,  B05B13/02 ,  B05D1/04 ,  B05D1/06 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/6776

Abstract: The present inventions relate to the formation of a thin polymer film on a substrate. Apparatus is described for transforming a solid polymer resist into an aerosol of small particles, electrostatically charging and depositing the particles onto a substrate, and flowing the particles into a continuous layer. Apparatus is further described for transforming solid resist into an aerosol of small particles by heating the resist to form a low viscosity liquid such as is compatible with nebulization and applying the techniques of jet or impact nebulization and aerosol particle sizing to form the aerosol. A method is further described of using ionized gas to confer charge onto the aerosol particles and using a progression of charging devices establish an electric field directing the flow of charged particles to the substrate. The progression of charging devices and associated apparatus results in high collection efficiency for the aerosol particles.

公开(公告)号：US09643342B2

公开(公告)日：2017-05-09

申请号：US14250581

申请日：2014-04-11

Applicant: 1366 Technologies, Inc.

Inventor： Emanuel M. Sachs ,  Richard L. Wallace ,  Eerik T. Hantsoo ,  Adam M. Lorenz ,  G. D. Stephen Hudelson ,  Ralf Jonczyk

IPC: C30B28/04 ,  B29C33/44 ,  C30B11/00 ,  C30B15/30 ,  C30B19/06 ,  C30B29/06

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential can be applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential can allow release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted through the thickness of the forming wafer. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet can allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

公开(公告)号：US20170051429A1

公开(公告)日：2017-02-23

申请号：US15306787

申请日：2015-04-17

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： EMANUEL M. SACHS ,  RALF JONCZYK ,  ADAM L. LORENZ ,  RICHARD L. WALLACE ,  G.D. STEPHEN HUDELSON

IPC: C30B11/02 ,  C30B29/06 ,  H01L29/06

CPC classification number: C30B11/02 ,  C30B29/06 ,  H01L29/0657 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180-250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to correspond to locations of relative thicknesses. Interstitial oxygen is less than 6×1017 atoms/cc, preferably less than 2×1017, total oxygen less than 8.75×1017 atoms/cc, preferably less than 5.25×1017. Thicker regions form adjacent template regions having relatively higher heat extraction propensity; thinner regions adjacent regions with lesser extraction propensity. Thicker template regions have higher extraction propensity. Functional materials upon the template also have differing extraction propensities.

Abstract translation: 半导体晶片在受控位置具有较薄和较厚的区域可能适用于光伏发电。 内部可以小于180微米或更薄，至50微米，较厚部分为180-250微米。 薄晶圆具有更高的效率。 较厚的周长提供处理强度。 较厚的条纹，着陆和岛屿用于金属化耦合。 晶片可以直接从熔体制成模板，其中不同热提取倾向的区域布置成对应于相对厚度的位置。 间隙氧小于6×1017原子/ cc，优选小于2×1017，总氧低于8.75×1017原子/ cc，优选小于5.25×1017。 更厚的区域形成具有相对更高的热提取倾向的相邻模板区域; 较薄的区域具有较小的提取倾向。 较厚的模板区域具有较高的提取倾向。 模板上的功能材料也具有不同的提取倾向。