GRID AND NANOSTRUCTURE TRANSPARENT CONDUCTOR FOR LOW SHEET RESISTANCE APPLICATIONS
    25.
    发明申请
    GRID AND NANOSTRUCTURE TRANSPARENT CONDUCTOR FOR LOW SHEET RESISTANCE APPLICATIONS 审中-公开
    用于低电阻应用的网格和纳米结构透明导体

    公开(公告)号:WO2012061514A1

    公开(公告)日:2012-05-10

    申请号:PCT/US2011058988

    申请日:2011-11-02

    Abstract: Transparent conductors and methods of forming same are provided. A transparent conductor can include a nanostructure layer (120) and a low sheet resistance grid (115) disposed on a transfer film surface (110) having an acceptable level surface roughness. The presence of the low sheet resistance grid lowers the sheet resistance of the transparent conductor to an acceptable level. After release of the transparent conductor from the film, the surface roughness of th transparent conductor will be at least comparable to the surface roughness of the transfer film.

    Abstract translation: 提供了透明导体及其形成方法。 透明导体可以包括设置在具有可接受的水平表面粗糙度的转印膜表面(110)上的纳米结构层(120)和低电阻格栅(115)。 低电阻格栅的存在将透明导体的薄层电阻降低到可接受的水平。 从薄膜中释放出透明导体后,透明导体的表面粗糙度至少与转印膜的表面粗糙度相当。

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