公开(公告)号：IL178053A

公开(公告)日：2010-06-30

申请号：IL17805306

申请日：2006-09-13

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  LOHOKARE SHRIKANT P ,  III ANDREW D BAILEY ,  KIM YUNSANG

Inventor： HOWALD ARTHUR M ,  LOHOKARE SHRIKANT P ,  III ANDREW D BAILEY ,  KIM YUNSANG

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

公开(公告)号：IL166342A

公开(公告)日：2009-08-03

申请号：IL16634205

申请日：2005-01-17

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDREAS ,  WILCOXSON MARK HENRY ,  III ANDREW D BAILEY

Inventor： HOWALD ARTHUR M ,  KUTHI ANDREAS ,  WILCOXSON MARK HENRY ,  III ANDREW D BAILEY

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  H01Q1/26 ,  H01Q7/00 ,  H01Q11/12 ,  H01Q21/29

Abstract: An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.

公开(公告)号：US2726185A

公开(公告)日：1955-12-06

申请号：US28461752

申请日：1952-04-26

Applicant: HOWALD ARTHUR M

Inventor： HOWALD ARTHUR M

IPC: A01K87/00 ,  B29C53/56 ,  C03C25/10

CPC classification number: A01K87/00 ,  B29C53/562 ,  B29L2031/06 ,  B29L2031/7002 ,  C03C25/10 ,  Y10S138/02 ,  Y10S138/07 ,  Y10S273/07 ,  Y10T428/2936

公开(公告)号：US2312214A

公开(公告)日：1943-02-23

申请号：US42479841

申请日：1941-12-29

Applicant: HOWALD ARTHUR M ,  DEARING WILLIAM C

Inventor： HOWALD ARTHUR M ,  DEARING WILLIAM C

IPC: C08K3/16 ,  C08K3/30

CPC classification number: C08K3/16 ,  C08K3/30 ,  C08L61/24