公开(公告)号：IL176807A

公开(公告)日：2013-02-28

申请号：IL17680706

申请日：2006-07-12

Applicant: LAM RES CORP ,  LOHOKARE SHRIKANT P ,  III ANDREW D BAILEY

Inventor： LOHOKARE SHRIKANT P ,  III ANDREW D BAILEY

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

Abstract: A system and method for forming a planar dielectric layer includes identifying a non-planarity in the dielectric layer, forming one or more additional dielectric layers over the dielectric layer and planarizing at least one of the additional dielectric layers wherein the one or more additional dielectric layers include at least one of a spin-on-glass layer and at least one of a low-k dielectric material layer and wherein each one of the one or more additional dielectric layers having a thickness of less than about 1000 angstroms and wherein the one or more additional dielectric layers has a total thickness of between about 1000 and about 4000 angstroms.

公开(公告)号：IL178053A

公开(公告)日：2010-06-30

申请号：IL17805306

申请日：2006-09-13

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  LOHOKARE SHRIKANT P ,  III ANDREW D BAILEY ,  KIM YUNSANG

Inventor： HOWALD ARTHUR M ,  LOHOKARE SHRIKANT P ,  III ANDREW D BAILEY ,  KIM YUNSANG

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

公开(公告)号：IL170852A

公开(公告)日：2010-06-30

申请号：IL17085205

申请日：2005-09-13

Applicant: III ANDREW D BAILEY ,  LAM RES CORP ,  LOHOKARE SHRIKANT P ,  HEMKER DAVID ,  COOK JOEL M

Inventor： III ANDREW D BAILEY ,  LOHOKARE SHRIKANT P ,  HEMKER DAVID ,  COOK JOEL M

IPC: B44C1/22 ,  H01L20060101 ,  H01L21/302 ,  H01L21/304 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/4763 ,  H01L21/768 ,  H01L33/00

Abstract: A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion having a localized non-uniformity. A bulk portion of the overburden portion is removed to planarize the overburden portion. The substantially locally planarized overburden portion is mapped to determine a global non-uniformity. The substantially locally planarized overburden portion is etched to substantially remove the global non-uniformity.

公开(公告)号：IL170851A

公开(公告)日：2010-05-31

申请号：IL17085105

申请日：2005-09-13

Applicant: LAM RES CORP ,  III ANDREW D BAILEY ,  LOHOKARE SHRIKANT P ,  HEMKER DAVID ,  COOK JOEL M

Inventor： III ANDREW D BAILEY ,  LOHOKARE SHRIKANT P ,  HEMKER DAVID ,  COOK JOEL M

IPC: H01L21/3105 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768

Abstract: A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion includes a localized non-uniformity. An additional layer is formed on the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.

公开(公告)号：IL176591A

公开(公告)日：2012-06-28

申请号：IL17659106

申请日：2006-06-27

Applicant: LAM RES CORP ,  III ANDREW D BAILEY ,  LOHOKARE SHRIKANT P

Inventor： III ANDREW D BAILEY ,  LOHOKARE SHRIKANT P

IPC: C23G5/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

Abstract: A system and method of passivating an exposed conductive material includes placing a substrate in a process chamber and injecting a hydrogen species into the process chamber. A hydrogen species plasma is formed in the process chamber. A surface layer species is reduced from a top surface of the substrate is reduced. The reduced surface layer species are purged from the process chamber.

公开(公告)号：IL176808A

公开(公告)日：2011-03-31

申请号：IL17680806

申请日：2006-07-12

Applicant: LAM RES CORP ,  RAVKIN MICHAEL ,  III ANDREW D BAILEY ,  KOROLIK MIKHAIL ,  YADAV PUNEET

Inventor： RAVKIN MICHAEL ,  III ANDREW D BAILEY ,  KOROLIK MIKHAIL ,  YADAV PUNEET

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

Abstract: A system and method for planarizing and controlling non-uniformity on a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple features in the pattern. The conductive interconnect material having an overburden portion. A bulk of the overburden portion is removed and a remaining portion of the overburden portion has a non-uniformity. The non-uniformity is mapped, optimal solution determined and a dynamic liquid meniscus etch process recipe is developed to correct the non-uniformity. A dynamic liquid meniscus etch process, using the dynamic liquid meniscus etch process recipe, is applied to correct the non-uniformity to substantially planarize the remaining portion of the overburden portion.

公开(公告)号：IL223836A

公开(公告)日：2013-10-31

申请号：IL22383612

申请日：2012-12-24

Applicant: LAM RES CORP ,  LOHOKARE SHRIKANT P ,  III ANDREW D BAILEY

Inventor： LOHOKARE SHRIKANT P ,  III ANDREW D BAILEY

IPC: H01L20060101 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

Abstract: A system and method for forming a planar dielectric layer includes identifying a non-planarity in the dielectric layer, forming one or more additional dielectric layers over the dielectric layer and planarizing at least one of the additional dielectric layers wherein the one or more additional dielectric layers include at least one of a spin-on-glass layer and at least one of a low-k dielectric material layer and wherein each one of the one or more additional dielectric layers having a thickness of less than about 1000 angstroms and wherein the one or more additional dielectric layers has a total thickness of between about 1000 and about 4000 angstroms.

公开(公告)号：IL166342A

公开(公告)日：2009-08-03

申请号：IL16634205

申请日：2005-01-17

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDREAS ,  WILCOXSON MARK HENRY ,  III ANDREW D BAILEY

Inventor： HOWALD ARTHUR M ,  KUTHI ANDREAS ,  WILCOXSON MARK HENRY ,  III ANDREW D BAILEY

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  H01Q1/26 ,  H01Q7/00 ,  H01Q11/12 ,  H01Q21/29

Abstract: An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.