公开(公告)号：AU5906098A

公开(公告)日：1998-08-18

申请号：AU5906098

申请日：1997-12-31

Applicant: RADIANT TECHNOLOGIES INC

Inventor： WOMACK RICHARD

IPC: G11C11/22 ,  G11C7/02 ,  G11C8/00 ,  G11C11/24 ,  G11C16/04

公开(公告)号：AU1821597A

公开(公告)日：1998-07-31

申请号：AU1821597

申请日：1996-12-27

Applicant: RADIANT TECHNOLOGIES INC

Inventor： SEAGER CARLETON H ,  EVANS JOSEPH TATE JR

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/477 ,  H01L31/18

公开(公告)号：DE69121200D1

公开(公告)日：1996-09-05

申请号：DE69121200

申请日：1991-05-06

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH ,  BULLINGTON JEFF

IPC: G02B6/35 ,  G02F1/29 ,  G02F1/313 ,  G02F1/01 ,  G02B5/23

Abstract: A light activated switching device is disclosed in which the receipt of a light signal is used to switch a light beam between two output ports. The input light beam is reflected from an interface between two regions having different indices of refraction when the light signal is present. The reflected light beam then exits through the first output port. In the absence of the light signal, the two regions have the same index of refraction, and the light beam passes through both regions and exits through the second output port.

公开(公告)号：AU641335B2

公开(公告)日：1993-09-16

申请号：AU7985391

申请日：1991-05-06

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH TATE JR ,  BULLINGTON JEFF ALLEN

IPC: G02F1/01 ,  G02B6/35 ,  G02F1/29 ,  G02F1/313 ,  G02F1/315

Abstract: A light activated switching device is disclosed in which the receipt of a light signal is used to switch a light beam between two output ports. The input light beam is reflected from an interface between two regions having different indices of refraction when the light signal is present. The reflected light beam then exits through the first output port. In the absence of the light signal, the two regions have the same index of refraction, and the light beam passes through both regions and exits through the second output port.

公开(公告)号：AU3582793A

公开(公告)日：1993-09-13

申请号：AU3582793

申请日：1993-01-13

Applicant: RADIANT TECHNOLOGIES INC

Inventor： BULLINGTON JEFF ,  ELLIS ROBERT V ,  WALKER RICHARD T

IPC: C23C16/40 ,  C23C16/452 ,  C23C16/48 ,  B05D3/06 ,  C23C16/02 ,  C23C16/22 ,  C23C16/46 ,  C23C16/50

公开(公告)号：AU2483892A

公开(公告)日：1993-03-16

申请号：AU2483892

申请日：1992-08-17

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： JOSEPH TATE EVANS JR. ,  JEFF ALLEN BULLINGTON

IPC: H04J14/08

Abstract: Devices for converting digital data into a light pulse train and decoding such a pulse train are disclosed. The light pulse generating device generates a train of light pulses having a pattern determined by a numerical value represented by a plurality of binary bits. The light pulse train generating device stores the bits in a register. Each cell of the register is connected to a light switching device that will interrupt a first light beam in response to a light signal if the value stored in the cell is a logical one. If the value is a logical 0, the interruption will not occur. The decoding device utilizes a plurality of light activated switches to route individual pulses in the light pulse train to different photodetectors. The light activated switching devices avoid the delays inherent in electrically activated switching devices.

公开(公告)号：AU3774593A

公开(公告)日：1993-10-05

申请号：AU3774593

申请日：1993-02-18

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH TATE JR ,  BULLINGTON JEFF ALLEN ,  MONTROSS CARL ELIJAH JR

IPC: H01L27/04 ,  G11C11/22 ,  H01G4/10 ,  H01G7/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108

Abstract: An improved method for constructing integrated circuit structures in which a buffer SiO2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO2 which is commonly observed when the SiO2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO2 layer from the ferroelectric material and/or the platinum regions.

公开(公告)号：CA2082938A1

公开(公告)日：1991-11-15

申请号：CA2082938

申请日：1991-05-06

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH T JR ,  BULLINGTON JEFF A

IPC: G02F1/01 ,  G02B6/35 ,  G02F1/29 ,  G02F1/313 ,  G02F1/19 ,  G02F1/295

Abstract: 2082938 9118305 PCTABS00008 A light activated switching device (10) is disclosed in which the receipt of a light signal is used to switch a light beam between two output ports (14) and (16). The input light beam is reflected from an interface between two regions having different indices of refraction when the light signal is present. The reflected light beam then exits through the first output port (16). In the absence of the light signal, the two regions have the same index of refraction, and the light beam passes through both regions and exits through the second output port (14).

公开(公告)号：AU5186096A

公开(公告)日：1996-10-08

申请号：AU5186096

申请日：1996-03-19

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH TATE JR ,  WARREN WILLIAM L ,  TUTTLE BRUCE A

IPC: H01L21/8247 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78

Abstract: An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.

公开(公告)号：AU668925B2

公开(公告)日：1996-05-23

申请号：AU3774593

申请日：1993-02-18

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH TATE JR ,  BULLINGTON JEFF ALLEN ,  MONTROSS CARL ELIJAH JR

IPC: H01L27/04 ,  G11C11/22 ,  H01G4/10 ,  H01G7/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L21/76 ,  H01L27/00

Abstract: An improved method for constructing integrated circuit structures in which a buffer SiO2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO2 which is commonly observed when the SiO2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO2 layer from the ferroelectric material and/or the platinum regions.