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公开(公告)号：AU1821597A
公开(公告)日：1998-07-31
申请号：AU1821597
申请日：1996-12-27
Applicant: RADIANT TECHNOLOGIES INC
Inventor： SEAGER CARLETON H , EVANS JOSEPH TATE JR
IPC: H01L21/02 , H01L21/768 , H01L21/477 , H01L31/18
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公开(公告)号：AU641335B2
公开(公告)日：1993-09-16
申请号：AU7985391
申请日：1991-05-06
Applicant: RADIANT TECHNOLOGIES INC
Inventor： EVANS JOSEPH TATE JR , BULLINGTON JEFF ALLEN
Abstract: A light activated switching device is disclosed in which the receipt of a light signal is used to switch a light beam between two output ports. The input light beam is reflected from an interface between two regions having different indices of refraction when the light signal is present. The reflected light beam then exits through the first output port. In the absence of the light signal, the two regions have the same index of refraction, and the light beam passes through both regions and exits through the second output port.
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公开(公告)号：AU9032691A
公开(公告)日：1992-05-26
申请号：AU9032691
申请日：1991-10-09
Applicant: RADIANT TECHNOLOGIES INC
Inventor： EVANS JOSEPH TATE JR , BULLINGTON JEFF ALLEN
Abstract: A light activated AND gate is disclosed which generates a light signal at a first output port in response to the simultaneous presence of light signals at an input port and a control port. With a light signal present at the control port, a light beam at the input port is reflected from an interface between two regions having different indices of refraction, and the reflected light beam then exits through a first output port. In the absence of a light signal at the control port, the two regions of the switching device have the same index of refraction, and the light beam at the input port passes through both regions and exits through a second output port.
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公开(公告)号：AU7985391A
公开(公告)日：1991-12-10
申请号：AU7985391
申请日：1991-05-06
Applicant: RADIANT TECHNOLOGIES INC
Inventor： EVANS JOSEPH TATE JR , BULLINGTON JEFF ALLEN
Abstract: A light activated switching device is disclosed in which the receipt of a light signal is used to switch a light beam between two output ports. The input light beam is reflected from an interface between two regions having different indices of refraction when the light signal is present. The reflected light beam then exits through the first output port. In the absence of the light signal, the two regions have the same index of refraction, and the light beam passes through both regions and exits through the second output port.
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公开(公告)号：AU3774593A
公开(公告)日：1993-10-05
申请号：AU3774593
申请日：1993-02-18
Applicant: RADIANT TECHNOLOGIES INC
Inventor： EVANS JOSEPH TATE JR , BULLINGTON JEFF ALLEN , MONTROSS CARL ELIJAH JR
IPC: H01L27/04 , G11C11/22 , H01G4/10 , H01G7/00 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108
Abstract: An improved method for constructing integrated circuit structures in which a buffer SiO2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO2 which is commonly observed when the SiO2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO2 layer from the ferroelectric material and/or the platinum regions.
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Patent Agency Ranking
公开(公告)号：AU5186096A
公开(公告)日：1996-10-08
申请号：AU5186096
申请日：1996-03-19
Applicant: RADIANT TECHNOLOGIES INC
Inventor： EVANS JOSEPH TATE JR , WARREN WILLIAM L , TUTTLE BRUCE A
IPC: H01L21/8247 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/51 , H01L29/788 , H01L29/792 , H01L29/78
Abstract: An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.
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公开(公告)号：AU668925B2
公开(公告)日：1996-05-23
申请号：AU3774593
申请日：1993-02-18
Applicant: RADIANT TECHNOLOGIES INC
Inventor： EVANS JOSEPH TATE JR , BULLINGTON JEFF ALLEN , MONTROSS CARL ELIJAH JR
IPC: H01L27/04 , G11C11/22 , H01G4/10 , H01G7/00 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L21/76 , H01L27/00
Abstract: An improved method for constructing integrated circuit structures in which a buffer SiO2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO2 which is commonly observed when the SiO2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO2 layer from the ferroelectric material and/or the platinum regions.
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公开(公告)号：AU6781294A
公开(公告)日：1994-11-21
申请号：AU6781294
申请日：1994-05-03
Applicant: RADIANT TECHNOLOGIES INC
Inventor： BULLINGTON JEFF ALLEN , EVANS JOSEPH TATE JR , MONTROSS CARL ELIJAH JR
Abstract: The sensing array detects an image by measuring the changes in the dielectric constant of individual capacitors in a rectangular array of capacitors. The present invention avoids the use of isolation transistors to eliminate the effects of other capacitors in the array when measuring the capacitance of a given capacitor in the array. During the measurement of any given capacitor in the array, the present invention maintains a zero potential difference across the capacitors that are not being measured, thereby eliminating any interference that might be caused by these capacitors.
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公开(公告)号：AT141012T
公开(公告)日：1996-08-15
申请号：AT91910220
申请日：1991-05-06
Applicant: RADIANT TECHNOLOGIES INC
Inventor： EVANS JOSEPH TATE JR , BULLINGTON JEFF ALLEN
Abstract: A light activated switching device is disclosed in which the receipt of a light signal is used to switch a light beam between two output ports. The input light beam is reflected from an interface between two regions having different indices of refraction when the light signal is present. The reflected light beam then exits through the first output port. In the absence of the light signal, the two regions have the same index of refraction, and the light beam passes through both regions and exits through the second output port.
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公开(公告)号：AU7478494A
公开(公告)日：1995-04-03
申请号：AU7478494
申请日：1994-07-28
Applicant: RADIANT TECHNOLOGIES INC
Inventor： EVANS JOSEPH TATE JR , BULLINGTON JEFF ALLEN
IPC: H01L21/02 , H01L27/115 , H01L21/44 , H01L27/105
Abstract: A method for connecting a silicon substrate to an electrical component via a platinum conductor. The resulting structure may be heated in the presence of oxygen to temperatures in excess of 800 DEG C. without destroying the electrical connection between the silicon substrate and components connected to the platinum conductor. The present invention utilizes a TiN or TiW buffer layer to connect the platinum conductor to the silicon substrate. The buffer layer is deposited as a single crystal on the silicon substrate. The platinum layer is then deposited on the buffer layer. The region of the platinum layer in contact with the buffer layer is also a single crystal.
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