公开(公告)号：AU5186096A

公开(公告)日：1996-10-08

申请号：AU5186096

申请日：1996-03-19

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH TATE JR ,  WARREN WILLIAM L ,  TUTTLE BRUCE A

IPC: H01L21/8247 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78

Abstract: An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.

公开(公告)号：EP0815596A4

公开(公告)日：1998-06-03

申请号：EP96908703

申请日：1996-03-09

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH TATE JR ,  WARREN WILLIAM L ,  TUTTLE BRUCE A

IPC: H01L21/8247 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78

CPC classification number: H01L29/516 ,  G11C11/223

Abstract: An improved ferroelectric FET structure (10) in which the ferroelectric layer (14) is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer (16) having first and second contacts (18, 19) thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode (12) and a ferroelectric layer (14) which is sandwiched between the semiconductor layer (16) and the bottom electrode (12). The ferroelectric layer (14) is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentration between 1 % and 8 %.

Abstract translation: 改进的铁电FET结构，其中掺杂铁电层以减少保留损耗。 根据本发明的铁电FET包括其上具有第一和第二触点的半导体层，第一和第二触点彼此分离。 铁电FET还包括夹在半导体层和底部电极之间的底部电极和铁电体层。 铁电层由化学组成ABO 3的钙钛矿结构构成，其中B位置包含第一和第二元素以及具有足够浓度的大于+4的氧化态的掺杂剂元素，以阻止在第一和第二元素之间测量的电阻的偏移 第二次接触时间。 铁电FET结构优选在A位置包含Pb。 第一和第二元素分别优选为Zr和Ti。 优选的B位掺杂剂是浓度在1％和8％之间的铌，钽和钨。