Abstract:
A semiconductor device with electrical overstress (EOS) protection is disclosed. The semiconductor device includes a semi-insulating layer, a first contact disposed onto the semi-insulating layer, and a second contact disposed onto the semi-insulating layer. A passivation layer is disposed onto the semi-insulating layer. The passivation layer has a dielectric strength that is greater than that of the semi-insulating layer to ensure that a voltage breakdown occurs within the semi-insulating layer within a semi-insulating region between the first contact and the second contact before a voltage breakdown can occur in the passivation layer.
Abstract:
A parallel amplifier (14), a switching supply (12), and a radio frequency (RF) notch filter (18) are disclosed. The parallel amplifier has a parallel amplifier output, such that the switching supply is coupled to the parallel amplifier output. Further, the RF notch filter is coupled between the parallel amplifier output and a ground. The RF notch filter has a selectable notch frequency, which is based on an RF duplex frequency.
Abstract:
A method and apparatus for measuring a complex gain of a transmit path are disclosed. During a test mode, an IQ to radio frequency modulator modulates a quadrature RF carrier signal using a quadrature test signal. An RF to IQ down-converter down-converts a down-converter RF input signal to provide a quadrature down-converter output signal using the quadrature RF carrier signal. The down-converter RF input signal is based on the quadrature test signal and the gain of the transmit path. A digital frequency converter frequency converts the quadrature down-converter output signal, providing an averaged frequency converter output signal, which is a quadrature direct current signal representative of an amplitude of the quadrature test signal and the gain of the transmit path. Therefore, a measured gain of the transmit path is based on the amplitude of the quadrature test signal and averaged frequency converter output signal.
Abstract:
The detailed description described embodiments of highly efficient power management systems configurable to simultaneously generate various output voltage levels for different components, sub-assemblies, and devices of electronic devices, sub-systems, and systems. In particular, the described embodiments include power management systems that substantially reduce or eliminate the need for inductors, large numbers of capacitors, and complex switching techniques to transform an available voltage level from a system power source, such as a battery, to more desirable power supply voltages. Some described embodiments include a charge pump that uses only two flying capacitors to simultaneously generate multiple supply outputs, where each of the multiple supply outputs may provide either the same or a different output voltage level. The described embodiments also include efficient power management systems that flexibly provide highly accurate voltage levels that are substantially insensitive to the voltage level provided by a system power source, such as a battery.
Abstract:
A system and method for classifying channels in a frequency hopping wireless communication system is provided. A data collection engine operates to obtain channel metrics indicating the level of interference for each channel used by the wireless communication system. A data analysis engine operates to provide a channel map for adaptive frequency hopping (AFH) and/or a channel map for channel avoidance. More specifically, the data analysis engine first operates to filter the channel metrics to remove channel metrics indicative of frequency hopping interference. Next, the channels are divided into a number of channel blocks each including at least two adjacent channels. For each channel block, the channel metrics of the channels within the channel block are combined to provide a metric sum. The data analysis engine then operates to classify each channel as usable or unusable based on the metric sums for each of the channel blocks.
Abstract:
The present invention provides a method and apparatus for estimating a multipath channel with sub-chip resolution. In general, secondary signals are characterized based on correlating a received signal including multipath signals, which include a main and the secondary signals, with a pseudo-random noise code. An inverse filter operates to increase a temporal resolution of results of the correlation of the received signal and the pseudo-random noise code, thereby allowing secondary multipath signals occurring within the same chip interval as another multipath signal to be detected and estimated correctly.
Abstract:
An amplifier provides two or more selectively enabled amplifier segments allowing a source signal to be amplified with a selectable output power. A bias circuit responsive to a bias control signal enables selectable combinations of one or more amplifier segments, thus allowing selection of a desired output power. Selecting a desired output signal power via the bias control signal corresponds to selecting an overall amplifier quiescent current that decreases with decreasing output signal power. Thus, the amplifier permits a controlling system, such as a mobile terminal (e.g., cellular telephone) to amplify a transmit signal with a selectable transmit signal output power and corresponding level of amplifier quiescent power consumption. Preferably, each segment comprises one or more transistor amplification stages which, when enabled by the bias circuit, are biased to permit maximum power linear amplification for the transmit signal.
Abstract:
A micro-electrical-mechanicai system (MEMS) guided wave device includes a single crystal piezoelectric layer and at least one guided wave confinement structure configured to confine a laterally excited wave in the single crystal piezoelectric layer. A bonded interface is provided between the single crystal piezoelectric layer and at least one underlying layer. A multi-frequency device includes first and second groups of electrodes arranged on or in different thickness regions of a single crystal piezoelectric layer, with at least one guided wave confinement structure. Segments of a segmented piezoelectric layer and a segmented layer of electrodes are substantially registered in a device including at least one guided wave confinement structure.
Abstract:
A micro-electrical-mechanicai system (MEMS) guided wave device includes a single crystal piezoelectric layer and at least one guided wave confinement structure configured to confine a laterally excited wave in the single crystal piezoelectric layer. A bonded interface is provided between the single crystal piezoelectric layer and at least one underlying layer. A multi-frequency device includes first and second groups of electrodes arranged on or in different thickness regions of a single crystal piezoelectric layer, with at least one guided wave confinement structure. Segments of a segmented piezoelectric layer and a segmented layer of electrodes are substantially registered in a device including at least one guided wave confinement structure.