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公开(公告)号：KR101178650B1
公开(公告)日：2012-08-30
申请号：KR1020107016843
申请日：2009-01-20
Applicant: 도쿄엘렉트론가부시키가이샤 , 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠
CPC classification number: C23C16/40 , C23C28/00 , C23C28/322 , C23C28/345 , H01L21/28562 , H01L21/76814 , H01L21/76831 , H01L21/76844
Abstract: When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.
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公开(公告)号：KR1020100093138A
公开(公告)日：2010-08-24
申请号：KR1020107016843
申请日：2009-01-20
Applicant: 도쿄엘렉트론가부시키가이샤 , 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠
CPC classification number: C23C16/40 , C23C28/00 , C23C28/322 , C23C28/345 , H01L21/28562 , H01L21/76814 , H01L21/76831 , H01L21/76844
Abstract: When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.
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公开(公告)号：KR100802810B1
公开(公告)日：2008-02-12
申请号：KR1020010024670
申请日：2001-05-07
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/00
Abstract: 처리액으로서 정리되어 폐기되는 빈도를 대폭 경감하여, 제조부담이 적고 원활하면서 또한 고품질로 액 처리가 가능한 액 처리 장치를 제공한다. 피 처리 기판에 액처리를 실시하는 처리액을 수용 가능한 처리액조와, 수용가능한 처리액을 처리액조 바깥과의 사이에서 순환시키는 처리액 순환계와, 순환되는 처리액중에 포함된 액 처리에 의한 반응 생성물을 제거하는 생성물 제거부를 포함한다. 수용된 처리액을 처리액조 외부와의 사이에서 순환시켜, 순환중인 처리액에 포함된 반응 생성물을 생성물 제거부에 의해 제거한다. 이것에 의해, 처리액에 잔류하는 화학 변화물, 분해물을 제거할 수 있으며, 처리액으로서의 열화를 방지할 수 있다.
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公开(公告)号：KR1020030079985A
公开(公告)日：2003-10-10
申请号：KR1020037010383
申请日：2002-01-29
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor： 사토히로시
IPC: H01L21/288
CPC classification number: C23C18/31 , C23C18/40 , H01L21/288 , H01L21/76877
Abstract: 처리체에 대하여, 환원제를 포함한 첨가제를 공급한 후, 처리체에 대하여 황산동 용액 등의 금속 이온을 포함하는 용액을 공급한다. 첨가제와 금속 이온을 포함하는 용액을 분리하기 때문에, 도금액의 조성의 조정이 용이해진다.
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