Abstract:
PURPOSE: A manufacturing method of polyacrylonitrile-based precursor fiber for manufacturing carbon fiber by a supercritical fluid processor is provided to gain acrylonitrile nanofiber using supercritical carbon dioxide as polymerization fluid. CONSTITUTION: Polyacrylonitrile-based precursor fiber for manufacturing carbon fiber of a nano size is manufactured by a RESOLV(rapid expansion of supercritical solution into a liquid solvent) method using supercritical carbon dioxide. A manufacturing method of the polyacrylonitrile-based precursor fiber includes the following steps: dissolving polyacrylonitrile in a mixed solution of dimethylformamide and supercritical carbon dioxide; spinning the solution in a sodium chloride solution with capillary nozzle; manufacturing poly acrylonitrile nanofiberl and manufacturing the carbon fiber with the poly acrylonitrile nanofiber.
Abstract:
PURPOSE: A method for being restored to a former state hydrophobicity of an organosilicate film of a low dielectric constant which is damaged in the supercritical carbon dioxide eliminates the unnecessary water peak adsorbed in the film doing the heat pretreatment in the organosilicate film and is damaged. The moisture re-adsorption by exposure can be shirked among the air. CONSTITUTION: A property of an organosilicate film of a low dielectric constant which is used after a plasma etching process/ashing for the insulating layer of the damaged and low dielectric constant is restored using the supercritical carbon dioxide. In order that film has the hydrophobicity to the surface inside, film is heat-treated. The heat-treated film as described above is restored using the silylating agent in the supercritical carbon dioxide. It is processed.
Abstract:
A contamination removing method is provided to remove the contaminant from the substrate surface without destruction of pattern by dissolving the contaminant using the mixture of supercritical carbon dioxide, surfactant, additive and co-solvent. A contamination removing method is as follows. A supporter containing contaminant is put into a high-pressure reactor(16), and then the high pressure reactor is closed by a lid attached to ultrasonic equipment(20). Supercritical carbon dioxide containing a cleaning material is injected in the high pressure reactor. The ultrasonic equipment removes the contaminant and the supercritical fluid mixture is separated. The top of the supporter is rinsed in pure supercritical carbon dioxide. The pure supercritical carbon dioxide is removed and the contaminant-removed supporter is separated.
Abstract:
A method for preparing a nanocomposite by using supercritical carbon dioxide is provided to obtain a nanocomposite comprising an inorganic oxide in a conductive polymer in an eco-friendly manner with a high conversion while facilitating easy separation of a desired product and avoiding a solubilization problem. A method for preparing a nanocomposite comprising an inorganic oxide homogeneously in a conductive polymer comprises the steps of performing surface modification of an inorganic oxide with a silane coupling agent, and polymerizing the surface-modified inorganic oxide together with a conductive monomer and oxidant catalyst in supercritical carbon dioxide, wherein the conductive monomer is monomer X represented by the following formula 1 or monomer Y represented by the following formula 2, includes a polymer obtained by homopolymerization of monomer X or monomer Y, and has a weight average molecular weight of 1,000-10,000,000; the inorganic oxide is selected from TiO2, SiO2, Al2O3, CaCO3, ZrO3, ZnO2 and SnO2; the oxidant catalyst is selected from ammonium persulfate, ferric chloride, cupric chloride, copper(II) fluoroborate, copper(II) oxychloride and potassium perchromate; and the supercritical carbon dioxide has a temperature of 31-100 deg.C and a pressure of 137.9-500 bars. In the formulae, Z is an imine or vinyl; Q is S, Se or N-R7; and each of R1-R7 is selected from H, OH, a halogen, halide, C50 or lower alkyl, alkoxy, alkylcarboxy, alkylester, alkylhydroxyl, nitroalkyl, cyanoalkyl, haloalkyl, oxyhaloalkyl, cyanohaloalkyl, aryl, oxyaryl, haloaryl, nitroaryl, cyanoaryl, oxyhaloalkylaryl, haloalkylaryl, nitrohaloalkylaryl and cyanohaloalkylaryl.
Abstract:
A method for preventing pattern collapse in supercritical carbon dioxide drying is provided to prevent a pattern from being expanded by processing the pattern in liquid carbon dioxide by using a surfactant after a wet process. A pattern is rinsed by using water, so that a predetermined pattern is formed on a photo-sensitive film made of an organic material on a substrate. The pattern is processed by using carbon dioxide containing a surfactant, so that a micro pattern is dried. A pattern layer having the pattern formed on the substrate is rinsed. The pattern is transferred into a high pressure drying chamber and the water is completely removed by using a mixture of liquid carbon dioxide and a surfactant for the carbon dioxide. An inner temperature of a high pressure drying chamber is increased and the pattern is processed by using a supercritical carbon dioxide, such that remainders are removed.
Abstract:
본발명은초임계이산화탄소를이용한퍼아세틸레이티드사이클로덱스트린및 약물의포접체초미립자및 이의제조방법에관한것이다. 또한, 본발명은상기포접체초미립자를포함하는경구용약제조성물에관한것이다. 본발명에따른포접체초미립자는, 초임계이산화탄소내의퍼아세틸레이티드사이클로덱스트린(PAc-CD) 및약물의혼합물을모세관노즐을통하여대기상또는용액상으로방출하여제조됨으로써, 간단하고, 경제적방법으로포접체초미립자을제조할수 있고, 상기포접체초미립자는포접율및 분산성이우수하여경구용조성물로이용될수 있다.
Abstract:
PURPOSE: A method and system for etching a silicon oxide film using a dense carbon dioxide are provided to eliminate generation of etching byproducts, thereby omitting an additional cleaning process. CONSTITUTION: A semiconductor substrate for forming a structure is provided into a processing chamber(S10). Highly dense carbon dioxide is supplied into the processing chamber to etch a sacrificial film(S20). Pure highly dense carbon dioxide is supplied so that fluid in the processing chamber is eliminated(S30). The pressure of the processing chamber is lowered so that the substrate is dried(S40).
Abstract:
PURPOSE: A silicon oxide etching method and a method for cleaning etching residue are provided to efficiently remove the etching residue generated by the reaction between a sacrificial layer and etchant by using supercritical carbon dioxide. CONSTITUTION: A semiconductor substrate is supplied to a processing chamber from the outside(E0). Supercritical carbon dioxide and etchant are injected to the processing chamber and are stirred(E1). The pressure is applied from the supercritical solvent supply unit to the supply chamber. The etching is performed by injecting etchant into a process chamber by closing and opening a valve between a supply chamber and a process chamber.
Abstract:
A manufacturing method of nanocomposite is provided to improve dispersibility within supercritical carbon dioxide and zygosity with the other materials by reforming surface of the magnetic property nano particle using a silane coupling agent. A manufacturing method of nanocomposite comprises a step of including uniformly magnetic property inorganic oxide in conductivity polymer at a step of polymerizing magnetic property inorganic oxide particle surface-modified with conductivity monomer using a silane coupling agent in supercritical carbon dioxide. A nanocomposite including the magnetic property inorganic oxide in the conductivity polymer includes one or more magnetic property inorganic oxide particles in a conductivity polymer particle.
Abstract:
A method for preparing core-shell type nanocomposite particles is provided to facilitate a separation of the product by pressure reduction of a reactor, and to produce the deformation-free product without causing a solubilization problem during a solvent removal step. A method for preparing core-shell type nanocomposite particles includes a steps of dispersing a surface-modified inorganic oxide in supercritical carbon dioxide, and using an organic monomer and a surfactant to prepare the core-shell type nanoparticles comprising an inorganic oxide core and an organic polymer shell layer, wherein the surface-modified inorganic oxide is obtained by surface-modifying an inorganic oxide using a silane coupling agent. The inorganic oxide is at least one selected from titanium dioxide, silicon dioxide, dialuminum trioxide, calcium carbonate, zirconium trioxide, zinc oxide, zinc dioxide, and tin dioxide. Further, the organic polymer is one or more selected from methyl mthacrylate, glycidyl methacrylate, styrene and divinyl benzene.