Abstract:
The embodiment of the present invention includes a level movement write driver in a sense amplifier for a resistive type memory. The write driver includes a cross-couple latch, a first output unit, a second output unit, and an input unit. The first output unit includes one or more first driving transistors which drive a first current through the first output unit without passing through the cross-couple latch. The second output unit includes one or more second driving transistors which drive a second current through the second output unit without passing through the cross-couple latch. The current flows of the output unit are separated from a latch circuit. For example, the consumption of a die area is reduced by not including two PMOS transistors which are serially connected. According to the embodiment of the present invention, a single control signal for driving the write driver is used.
Abstract:
Embodiments of the present invention include sense amplifiers of a resistive memory, each of the sense amplifiers including differential output terminals, first and second input terminals, a pre-charge section, and other components arranged so that current is reused during at least a "set" or "amplification" stage of the sense amplifier, thereby reducing overall current consumption of the circuit, and improving noise immunity. A voltage level of a high-impedance output terminal is changed in response to a delta average current between a reference line current and a bit line current. During a "go" or "latch" stage of operation, a logical value "0" or "1" is latched at the differential output terminals based on positive feedback of a latch circuit. Also, a current mirror circuit can be used in conjunction with the sense amplifier circuit, and the sense amplifier includes the capability of read/re-write operation.
Abstract:
PURPOSE: An oscillator is provided to generate a multi phase clock using a complementation fully differential amplifier, thereby reducing power consumption. CONSTITUTION: The first complementation fully differential amplifier outputs the first output signal(OUT) which complementarily and differentially amplifies signals applied to the first input terminal and the second input terminal. The second complementation fully differential amplifier outputs the second output signal(OUTB) which has a completely different differential phase from the first output signal by completely and differentially amplifying signals applied to the third input terminal and the fourth input terminal. An output terminal of the first complementation fully differential amplifier is connected to the third and fourth input terminals of the second complementation fully differential amplifier. An output terminal of the second complementation fully differential amplifier is connected to the first and second input terminals of the first complementation fully differential amplifier. The first complementation fully differential amplifier and the second complementation fully differential amplifier have the same structure or the same amplifying performance.
Abstract:
본 발명은 3개 전송 라인을 이용하여 3 비트 데이터를 차동 모드로 송수신하는 신호 전송 장치 및 방법에 대하여 개시된다. 신호 전송 장치는, 3개의 전송 라인들과, 제1 내지 제3 송신 데이터들을 암호화하여 다수개의 전압 레벨들로 출력되는 제1 내지 제3 전송 데이터들을 발생하고, 전송 라인들로 전송하는 신호 송신부, 그리고 제1 내지 제3 전송 데이터들을 수신하고, 제1 내지 제3 전송 데이터들 간의 중간 레벨을 모니터링하여 제1 내지 제3 수신 데이터로 복원하는 신호 수신부를 포함한다. 신호 전송 장치는, 3개의 전송 라인들을 이용하여 8가지 패턴의 3 비트 랜덤 데이터 통신이 가능하다. 3 비트 데이터 통신, 신호 전송 장치, 중간 레벨
Abstract:
본 발명은 반도체 메모리 장치 및 이 장치의 테스트 방법을 공개한다. 이 장치는 제1 클럭 신호에 응답하여 데이터를 입출력하는 메모리, 제2 클럭 신호에 응답하여 입력되는 데이터를 변환하여 출력하는 입력 변환 수단, 및 상기 제2 클럭 신호에 응답하여 제1 테스트 모드 시에는 상기 메모리로부터 출력되는 데이터를 변환하여 출력하고, 제2 테스트 모드 시에는 상기 입력 변환 수단으로부터 출력되는 데이터를 변환하여 출력하는 출력 변환 수단을 구비하는 것을 특징으로 한다. 따라서, 반도체 메모리 장치가 복수개의 주파수 영역을 가지는 경우, 복수개의 주파수 영역 중 어떤 영역에서 불량이 발생했는지를 파악할 수 있다.
Abstract:
In an output driver circuit and method, a control circuit generates a control signal in response to a current internal data signal. An output driver generates an output data signal in response to the control signal. A pre-emphasis circuit adjusts a current flowing through a node having the control signal generated thereon in response to a previous internal data signal. The pre-emphasis circuit may also adjust the output signal in response to the previous internal data signal.
Abstract:
A memory device for storage of digitally formatted data can include a Digital to Analog Converter (DAC) circuit that is configured to convert digitally formatted data received from outside the memory device to analog formatted data. An Analog to Digital Converter (ADC) circuit is coupled to the DAC circuit and is configured to convert the analog formatted data to the digitally formatted data for storage in the memory device. Related methods are also disclosed.
Abstract:
PURPOSE: A delay locked loop(DLL) is provided to output the inner clock signal with positioning it at the center of the effective data by automatically controlling the phase of the inner clock signal in the DLL. CONSTITUTION: A delay locked loop(DLL) includes a first DLL, a phase difference detection and counting block(100) and a second DLL. The first DLL generates a first inner clock signal of which phase is synchronized to the external clock signal by using a signal generated by detecting and counting the phase difference of the external clock signal and the first inner clock signal. The phase difference detection and counting block(100) performs the counting by detecting the phase difference between the first inner clock signal and the second inner clock signal. And, the second DLL generates the second inner clock signal with correcting the phase of the first inner clock signal by using a signal which is obtained by adding a signal generated by performing the detection and counting the phase difference between the external clock signal and the first inner clock signal to a signal outputted from the phase difference detection and counting block(100).
Abstract:
PURPOSE: A delayed tap signal generation circuit for controlling a delay difference by using interpolation of two input clocks is provided to control a delay difference between output tap signals by using the inputted offset. CONSTITUTION: A delayed tap signal generation circuit for controlling a delay difference by using interpolation of two input clocks includes a first tap signal generation circuit(210) and a second tap signal generation circuit(220). The first tap signal generation circuit(210) receives the first and the second clocks having a predetermined phase difference and generates the first tap signal corresponding to the offset in response to the first clock, the second clock, and the offset. The first tap signal is delayed as much as the first delay difference. The second tap signal generation circuit(220) receives the first and the second clocks and generates the second tap signal in response to the first clock, the second clock, and the offset. The first and the second tap signals are generated by interpolating the first and the second clocks in response to the offset.
Abstract:
PURPOSE: A delayed locked loop(DLL) is provided to enable a user to know whether a misoperation of a semiconductor memory device is due to the delayed locked loop or not by detecting clock synchronization. CONSTITUTION: A delayed locked loop(DLL) provided with a circuit for detecting the synchronization status of a clock includes a phase detector(210), a phase mixer(220) and a clock synchronization detector. The phase detector(210) detects the difference between the external clock and the internal clock by receiving the internal and the output clocks and outputs the detection result. The phase mixer(220) receives the output signal of the phase detector(210), enable the internal clock to be synchronized with the external clock and outputs the synchronized internal clock. And, the clock synchronization detector detects whether the internal clock is synchronized with the external clock or not. The phase mixer(220) is provided with a counter(221), a digital-analog converter(222) and an interpolation circuit(223).