公开(公告)号：KR1020080056065A

公开(公告)日：2008-06-20

申请号：KR1020060128859

申请日：2006-12-15

Applicant: 삼성전자주식회사

Inventor： 문현식 ,  박종진 ,  이상윤 ,  이광섭

IPC: H01L29/786 ,  C07D471/04

CPC classification number: C07D471/04 ,  H01L51/10

Abstract: A buffer layer including a material of a diaza SPN(spirobifluorene) core structure is provided to improve carrier injection and carrier transportation of an electronic device by including a new buffer material containing as a core a diaza SPN structure in which a nitrogen atom is included in a ring. A buffer layer includes a material having a diaza SPN core structure indicated by the following chemical formula 1, R1 and R2 are independently selected from a group of a substituted or non-substituted alkyl group having a carbon number of 1-30, a substituted or non-substituted heteroalkyl group having a carbon number of 1-30, a substituted or non-substituted alkoxy group having a carbon number of 1-30, a substituted or non-substituted heteroalkoxy group having a carbon number of 1-30, a substituted or non-substituted aryl group having a carbon number of 6-30, a substituted or non-substituted aryl alkyl group having a carbon number of 6-30, a substituted or non-substituted aryloxy group having a carbon number of 6-30, a substituted or non-substituted hetero aryl group having a carbon number of 2-30, a substituted or non-substituted hetero aryl alkyl group having a carbon number of 2-30, a substituted or non-substituted hetero aryl oxy group having a carbon number of 2-30, a substituted or non-substituted cyclo alkyl group having a carbon number of 5-20, a substituted or non-substituted hetero cyclo alkyl group having a carbon number of 2-30, a substituted or non-substituted alkyl ester group having a carbon number of 1-30, a substituted or non-substituted hetero alkyl ester group having a carbon number of 1-30, a substituted or non-substituted aryl ester group having a carbon number of 6-30 and a substituted or non-substituted hetero aryl ester group having a carbon number of 2-30.

Abstract translation: 提供了包含迪亚SPN（螺二芴）核心结构材料的缓冲层，以通过包括一种新的缓冲材料来改善电子器件的载流子注入和载流子输送，该缓冲材料含有包含氮原子的二氮杂的SPN结构 戒指。 缓冲层包括具有由以下化学式1表示的二氮杂核心结构的材料，R1和R2独立地选自碳数为1-30的取代或未取代的烷基，取代或未取代的 碳数为1-30的非取代杂烷基，碳数为1-30的取代或未取代的烷氧基，碳数为1-30的取代或未取代的杂烷氧基，取代的 或未取代的碳原子数为6-30的芳基，碳数为6-30的取代或未取代的芳基烷基，碳数为6-30的取代或未取代的芳氧基， 碳原子数为2-30的取代或未取代的杂芳基，碳数为2-30的取代或未取代的杂芳基烷基，具有碳原子的取代或未取代的杂芳基氧基 数量2-30，取代 或未取代的碳数为5-20的环烷基，碳数为2-30的取代或未取代的杂环烷基，碳数为1的取代或未取代的烷基酯基 -30，碳数为1-30的取代或未取代的杂烷基酯基，碳数为6-30的取代或未取代的芳基酯基和取代或未取代的杂芳基酯基 碳数为2-30。

公开(公告)号：KR1020070115460A

公开(公告)日：2007-12-06

申请号：KR1020060049947

申请日：2006-06-02

Applicant: 삼성전자주식회사

Inventor： 이상윤 ,  한정석 ,  한국민 ,  구본원 ,  문현식

IPC: H01L21/336 ,  H01L27/28 ,  H01L51/10 ,  B82Y40/00

CPC classification number: H01L51/0048 ,  B82Y10/00 ,  H01L51/0003 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105 ,  Y02E10/549

Abstract: A semiconductor layer made of same series material, and an organic electron device including source/drain electrodes are provided to reduce a contact resistance by forming the semiconductor layer and the electrodes using the same series material which is able to perform a wet process at room temperature. An organic electron device includes a substrate(1), a gate electrode(2), a gate insulating layer(3), a semiconductor layer(5) and a source/drain electrode(4). The semiconductor layer and the source/drain electrode are formed by an organic semiconductor member obtained by adding nano particles of carbon system to the organic semiconductor material.

Abstract translation: 提供由相同系列材料制成的半导体层和包括源极/漏极的有机电子器件，以通过使用能够在室温下进行湿法处理的相同系列材料形成半导体层和电极来降低接触电阻 。 有机电子器件包括衬底（1），栅极（2），栅极绝缘层（3），半导体层（5）和源极/漏极（4）。 半导体层和源极/漏极由通过将碳系纳米颗粒加入有机半导体材料而获得的有机半导体构件形成。

公开(公告)号：KR101206661B1

公开(公告)日：2012-11-30

申请号：KR1020060049947

申请日：2006-06-02

Applicant: 삼성전자주식회사

Inventor： 이상윤 ,  한정석 ,  한국민 ,  구본원 ,  문현식

IPC: H01L21/336 ,  H01L27/28 ,  H01L51/10 ,  B82Y40/00

CPC classification number: H01L51/0048 ,  B82Y10/00 ,  H01L51/0003 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105 ,  Y02E10/549

Abstract: 본 발명은 반도체층과 소스/드레인 전극을 상온 습식 공정이 가능한 동일 계열의 소재로 형성하여 상호 간에 비슷한 표면 특성을 갖게 함으로써 상기 반도체층과 소스/드레인 전극 사이의 컨택(contact) 저항을 감소시킨 유기 전자 소자에 관한 것이다. 상기 반도체층 및 소스/드레인 전극을 형성하는 소재는 유기 반도체 물질에 탄소계 나노입자를 일정량 첨가하여 얻은 유기 반도체 계열의 소재로, 상기 탄소계 나노입자의 첨가량에 따라 반도체성 또는 도체성의 상이한 전도도를 나타낸다.
반도체층, 소스/드레인 전극, 유기 반도체 물질, 탄소계 나노입자, 유기 전자 소자, 접촉, 컨택 저항, 상온 습식 공정

公开(公告)号：KR101139055B1

公开(公告)日：2012-04-30

申请号：KR1020050113372

申请日：2005-11-25

Applicant: 삼성전자주식회사

Inventor： 정은정 ,  문현식 ,  한국민

IPC: C07C13/00 ,  C07C15/02 ,  C07D333/10

CPC classification number: Y02E10/549

Abstract: Disclosed are aromatic enediyne derivatives, methods of manufacturing organic semiconductor thin films from such aromatic enediyne derivatives, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.

公开(公告)号：KR101121204B1

公开(公告)日：2012-03-23

申请号：KR1020050113373

申请日：2005-11-25

Applicant: 삼성전자주식회사

Inventor： 정은정 ,  문현식 ,  한국민

IPC: H01L51/05 ,  H01L51/50

Abstract: 본 발명은 방향족 엔다이인 유도체를 이용한 유기 반도체 박막의 제조방법, 그에 의한 유기 반도체 박막 및 이를 채용한 전자소자에 관한 것으로, 신규 방향족 엔다이인(enediyne) 유도체를 이용하여 상온 스핀코팅과 같은 용액공정이 가능할 뿐만 아니라 화학적, 전기적으로 안정하고 신뢰성 있는 유기 반도체 박막의 제조방법, 그에 의한 유기 반도체 박막 및 이를 채용한 전자소자에 관한 것이다. 본 발명에 의하면 용액공정으로 대면적의 박막 형성이 가능하여 공정 단순화 및 비용절감 효과를 가져올 수 있고, 유기 박막 트랜지스터, 전기발광소자, 태양전지 및 메모리 등 다양한 분야에 효과적으로 적용될 수 있는 유기 반도체 박막을 제공할 수 있다.
엔다이인 유도체, 유기 반도체, 용액공정, 스핀코팅, 박막 트랜지스터, 전기발광소자, 태양전지, 메모리

公开(公告)号：KR1020090017792A

公开(公告)日：2009-02-19

申请号：KR1020070082227

申请日：2007-08-16

Applicant: 삼성전자주식회사

Inventor： 구본원 ,  이상윤 ,  한정석 ,  문현식 ,  김도환

IPC: H01L29/786 ,  H01L21/027

CPC classification number: H01L29/78606 ,  H01L21/0272 ,  H01L21/0274 ,  H01L29/786

Abstract: A method for patterning the organic semiconductor layer is provided to simplify the process and cut down the cost by forming the organic semiconductor layer by printing and by removing he bank formed in the organic semiconductor layer by the lift off method. The bank divides the fixed region in order to form the region except the pattern of the semiconductor layer(1). The organic semiconductor layer is formed on the bank and the region surrounded by the bank. The organic semiconductor layer having the desired pattern is formed by lifting-off the bank formed on the organic semiconductor layer. In the lift-off process, the material comprising the organic semiconductor layer is not dissolved but the material comprising the bank is dissolved to remove the bank.

Abstract translation: 提供用于图案化有机半导体层的方法，以通过印刷形成有机半导体层并且通过剥离法除去形成在有机半导体层中的层来简化工艺并降低成本。 为了形成半导体层（1）的图案以外的区域，划分固定区域。 有机半导体层形成在银行和由银行包围的区域上。 具有期望图案的有机半导体层通过提升形成在有机半导体层上的堤而形成。 在剥离过程中，包含有机半导体层的材料不溶解，但是包含银行的材料被溶解以除去银行。

公开(公告)号：KR1020080109196A

公开(公告)日：2008-12-17

申请号：KR1020070057235

申请日：2007-06-12

Applicant: 삼성전자주식회사

Inventor： 정은정 ,  문현식 ,  한정석 ,  손경석 ,  이은경

IPC: H01L29/786 ,  H01L51/30

CPC classification number: C09D4/06 ,  C08G77/58 ,  C08K5/5425 ,  C08L21/00 ,  C08L83/04 ,  C09D183/04 ,  C09D183/14 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  Y10T428/31663 ,  C08L2666/02 ,  C08L2666/52

Abstract: A composition for preparing an organic insulator and the organic insulator prepared using the same are provided to reduce the fabrication cost and simplify the fabrication process by forming the organic insulator using the wet etching process. A composition for preparing an organic insulator comprises the organic polymer, the organometallic compound, and the multiple integration containing silane system organic and inorganic hybrid material. The multiple integration containing silane system organic and inorganic hybrid material is the multiple integration containing organo silane system compound or the polymer. The polymer is obtained by hydrolyzing and performing the condensation reaction of the multiple integration organic silane system compound with acid or the base catalyst and water in the organic solvent.

Abstract translation: 提供了一种用于制备有机绝缘体的组合物和使用其制备的有机绝缘体，以通过使用湿蚀刻工艺形成有机绝缘体来降低制造成本并简化制造工艺。 用于制备有机绝缘体的组合物包括有机聚合物，有机金属化合物和含有硅烷系有机和无机混合材料的多重结合。 含有硅烷系统有机和无机混合材料的多重积分是含有机硅烷体系化合物或聚合物的多重整合。 聚合物通过水解和进行多组分有机硅烷体系化合物与酸或碱催化剂和水在有机溶剂中的缩合反应而获得。

公开(公告)号：KR1020070076020A

公开(公告)日：2007-07-24

申请号：KR1020060004916

申请日：2006-01-17

Applicant: 삼성전자주식회사

Inventor： 정은정 ,  김주영 ,  문현식 ,  이방린 ,  이은경 ,  한국민

IPC: H01L51/30 ,  H01L29/786

CPC classification number: C07D495/04 ,  C07D417/14 ,  H01L51/0545 ,  H01L51/5048

Abstract: An NPN-type low molecular aromatic ring compound is provided to improve an electrical characteristic by reducing a leakage current as compared with a PNP-type organic semiconductor material. An NPN-type aromatic ring compound is indicated by the following chemical formula 1. [chemical formula 1](Ar1)-(X)n-(Ar2) wherein X is selected from a group of an aryl group of substituted or non-substituted C6-C30 and a hetero aryl group of substituted or non-substituted C2-C20 including S or Se and the X is the same or different when n is not smaller than 2. In the chemical formula 1, Ar1 and Ar2 are independently selected from a hetero aryl group of C2~C20 including N or O and n is an integer of 2~10. The average molecular weight of the aromatic ring compound is from 300 to 5000.

Abstract translation: 与PNP型有机半导体材料相比，提供了NPN型低分子芳环化合物以通过减少漏电流来改善电特性。 NPN型芳环化合物由以下化学式1表示。[化学式1]（Ar1） - （X）n-（Ar2）其中X选自取代或未取代的芳基 C6-C30和包含S或Se的取代或未取代的C2-C20的杂芳基，当n不小于2时，X相同或不同。在化学式1中，Ar 1和Ar 2独立地选自 包括N或O的C2〜C20的杂芳基，n为2〜10的整数。 芳环化合物的平均分子量为300〜5000。

公开(公告)号：KR1020070065949A

公开(公告)日：2007-06-27

申请号：KR1020050113373

申请日：2005-11-25

Applicant: 삼성전자주식회사

Inventor： 정은정 ,  문현식 ,  한국민

IPC: H01L51/05 ,  H01L51/50

Abstract: Provided are a method for preparing an organic semiconductor thin film simply by solution process, an organic semiconductor thin film prepared by the method which is excellent in chemical and electrical stability and reliance, and an electronic device containing the organic semiconductor thin film as a carrier transport layer. The method comprises the steps of coating a precursor solution comprising an aromatic enediyne derivative represented by formula 1, 2 or 3 and an organic solvent on a substrate to form a coating layer; and heat treating the coating layer to form a thin film, wherein X1, X2, X3, X4, X5, X6, Ar1 and Ar2 are independently a substituted or unsubstituted C3-C30 arylene group or a substituted or unsubstituted C2-C30 heteroarylene group; R1, R2, R3, R4, R5 and R6 are independently H, a halogen atom, a nitro group, an amino group, a cyano group, -SiR1R2R3 (wherein R1, R2 and R3 are independently H or a C1-C10 alkyl group), a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C1-C20 alkoxy group, a substituted or unsubstituted C6-C20 arylalkyl group, a substituted or unsubstituted C6-C30 aryloxy group, a substituted or unsubstituted C2-C30 heteroaryloxy group, a substituted or unsubstituted C1-C20 heteroalkyl group, or a substituted or unsubstituted C2-C30 heteroarylalkyl group; R1, R2, R3 and R4 are not 0 simultaneously in the formula 1, R5 and R6 are not 0 simultaneously in the formula 2, and R3 and R4 are not 0 simultaneously in the formula 3; a, b, c, d, e and f are independently an integer of 0-10; a+b+c is not 0; and c+d+f is not 0.

Abstract translation: 提供了通过溶液法制备有机半导体薄膜的方法，通过化学和电学稳定性和依赖性优异的方法制备的有机半导体薄膜和包含有机半导体薄膜作为载流子传输的电子器件 层。 该方法包括以下步骤：将包含由式1,2或3表示的芳族烯二炔衍生物和有机溶剂的前体溶液涂布在基材上以形成涂层; 并且对所述涂层进行热处理以形成薄膜，其中X1，X2，X3，X4，X5，X6，Ar1和Ar2独立地为取代或未取代的C3-C30亚芳基或取代或未取代的C2-C30亚杂芳基; R 1，R 2，R 3，R 4，R 5和R 6独立地为H，卤素原子，硝基，氨基，氰基，-SiR 1 R 2 R 3（其中R 1，R 2和R 3独立地为H或C 1 -C 10烷基 取代或未取代的C 1 -C 20烷基，取代或未取代的C 2 -C 20烯基，取代或未取代的C 2 -C 20炔基，取代或未取代的C 1 -C 20烷氧基，取代或未取代的C 6 -C 20芳基烷基 取代或未取代的C 6 -C 30芳氧基，取代或未取代的C 2 -C 30杂芳氧基，取代或未取代的C 1 -C 20杂烷基或取代或未取代的C 2 -C 30杂芳基烷基; 式1中R1，R2，R3和R4不同时为0，式2中R5和R6不同时为0，式3中R3和R4同时为0; a，b，c，d，e和f独立地为0-10的整数; a + b + c不为0; 并且c + d + f不为0。

公开(公告)号：KR1020070055074A

公开(公告)日：2007-05-30

申请号：KR1020050113372

申请日：2005-11-25

Applicant: 삼성전자주식회사

Inventor： 정은정 ,  문현식 ,  한국민

IPC: C07C13/00 ,  C07C15/02 ,  C07D333/10

CPC classification number: Y02E10/549

Abstract: 본 발명은 신규한 방향족 엔다이인(enediyne) 유도체, 이를 이용한 유기 반도체 및 전자소자에 관한 것으로, 소자 적용시 상온 스핀 코팅 등의 용액공정이 가능할 뿐만 아니라 화학적, 전기적으로 안정하고 신뢰성 있는 반도체 박막을 형성할 수 있는 신규 방향족 엔다이인(enediyne) 유도체, 이를 이용한 유기 반도체 및 전자소자에 관한 것이다. 본 발명에 의하면 용액공정으로 대면적의 박막 형성이 가능하여 공정 단순화 및 비용절감 효과를 가져올 수 있고, 유기 박막 트랜지스터, 전기발광소자, 태양전지 및 메모리 등 다양한 분야에 효과적으로 적용될 수 있는 유기 반도체를 제공할 수 있다.
엔다이인 유도체, 유기 반도체, 용액공정, 스핀코팅, 박막 트랜지스터, 전기발광소자, 태양전지, 메모리