표면 수식된 탄소나노튜브를 이용한 유기박막 트랜지스터
    2.
    发明公开
    표면 수식된 탄소나노튜브를 이용한 유기박막 트랜지스터 有权
    有机薄膜晶体管使用碳纳米管引入表面改性

    公开(公告)号:KR1020080049343A

    公开(公告)日:2008-06-04

    申请号:KR1020060119799

    申请日:2006-11-30

    Abstract: An organic thin film transistor using a surface-modified carbon nano-tube is provided to form a semiconductor layer having a high adhesive characteristic by using a surface-modified carbon nano-tube and a conductive polymer. An organic thin film transistor using a surface-modified carbon nano-tube includes a substrate, a gate electrode, a gate insulating layer, source/drain electrodes, and an organic semiconductor layer. The organic semiconductor layer is made of a composition including a surface-modified carbon nano-tube, and a conductive polymer. The surface-modified carbon nano-tube is formed by modifying a surface of a carbon nano-tube by using a hardening functional group. The hardening functional group corresponds to an oxirane group or an anhydride group.

    Abstract translation: 提供使用表面改性碳纳米管的有机薄膜晶体管,通过使用表面改性碳纳米管和导电聚合物形成具有高粘合特性的半导体层。 使用表面改性碳纳米管的有机薄膜晶体管包括基板,栅极电极,栅极绝缘层,源极/漏极电极和有机半导体层。 有机半导体层由包含表面改性碳纳米管和导电聚合物的组合物制成。 表面改性碳纳米管通过使用硬化官能团改性碳纳米管的表面而形成。 硬化官能团对应于环氧乙烷基团或酸酐基团。

    계면특성이 향상된 유기박막트랜지스터 및 그의 제조방법
    4.
    发明授权
    계면특성이 향상된 유기박막트랜지스터 및 그의 제조방법 有权
    具有改进的界面特性的有机薄膜晶体管及其制备方法

    公开(公告)号:KR101379616B1

    公开(公告)日:2014-03-31

    申请号:KR1020070076921

    申请日:2007-07-31

    CPC classification number: H01L51/0512 H01L51/0012 H01L51/0037 H01L51/0529

    Abstract: 본 발명은 유기절연층의 표면과 소스/드레인 전극의 표면 또는 소스/드레인 전극의 표면 위에 형성된 결정성 유기바인더층을 포함하는 것을 특징으로 하는 계면특성이 향상된 유기박막 트랜지스터 및 그의 제조방법에 관한 것이다. 본 발명의 유기 박막 트랜지스터는 유기반도체층과 절연체층 사이의 계면 또는 유기반도체층과 전극 사이의 계면에서의 2차원적 기하학적 조화와 계면안정성이 향상되어 소자의 전기적 특성이 향상된 이점을 가진다.
    유기박막 트랜지스터, 유기절연층, 소스/드레인 전극, 결정성 유기 바인더층

    보호막 형성용 조성물 및 이에 의한 보호막을 포함한유기박막 트랜지스터
    7.
    发明公开
    보호막 형성용 조성물 및 이에 의한 보호막을 포함한유기박막 트랜지스터 有权
    形成钝化层的组合物和包含钝化层的有机薄膜晶体管

    公开(公告)号:KR1020090017301A

    公开(公告)日:2009-02-18

    申请号:KR1020070081939

    申请日:2007-08-14

    CPC classification number: G03F7/092 G03F7/0046 G03F7/038

    Abstract: A composition for forming a passivation layer is provided to prevent the degradation of performance of an organic thin film transistor by blocking moisture and oxygen, and the deterioration of the organic layer. A composition for forming a passivation layer comprises a perfluoro polyether derivative of the chemical formula 1: [A-CF2O(CF2CF2O)m(CF2O)nCF2-A] or the chemical formula 2: [CF3O(CF2CF2O)m(CF2O)nCF2-A], a photosensitive polymer or their copolymers, and a photocurable agent. In the chemical formula 1 and the chemical formula 2, A is A 'or RA', wherein A' is COF, SiX1X2X3 (X1, X2 and X3 are independently C1-10 alkyl group, and at least one of them is C1-10 alkoxy group), silanol, chlorosilane, carboxylic acid, alcohol, amine, phosphoric acid and their derivatives; R is C1-C30 substituted or non-substituted alkylene group, wherein the substitution radical is at least one selected from the group consisting of -OH, C1-10 alkyl group, hydroxy alkyl group, amide group, nitro group, C2-30 alkenyl group, C1-30 alkoxy group, and C2-30 alkoxy alkyl group; and m is 1-50 and n is 1-50.

    Abstract translation: 提供了一种用于形成钝化层的组合物,以通过阻止水分和氧气以及有机层的劣化来防止有机薄膜晶体管的性能下降。 用于形成钝化层的组合物包括化学式1的全氟聚醚衍生物:[A-CF2O(CF2CF2O)m(CF2O)nCF2-A]或化学式2:[CF3O(CF2CF2O)m(CF2O)nCF2- A],感光性聚合物或它们的共聚物,以及光固化剂。 在化学式1和化学式2中,A是A'或RA',其中A'是COF,SiX1X2X3(X1,X2和X3独立地是C1-10烷基,并且它们中的至少一个是C1-10 烷氧基),硅烷醇,氯硅烷,羧酸,醇,胺,磷酸及其衍生物; R是C1-C30取代或未取代的亚烷基,其中取代基是选自-OH,C 1-10烷基,羟基烷基,酰胺基,硝基,C 2-30烯基 基团,C 1-3烷氧基和C 2-30烷氧基烷基; m为1-50,n为1-50。

    신규한 방향족 엔다이인 유도체, 이를 이용한 유기 반도체 박막 및 전자 소자
    8.
    发明公开
    신규한 방향족 엔다이인 유도체, 이를 이용한 유기 반도체 박막 및 전자 소자 有权
    新型芳香族有机衍生物,有机半导体薄膜及其电子器件

    公开(公告)号:KR1020080044973A

    公开(公告)日:2008-05-22

    申请号:KR1020060113845

    申请日:2006-11-17

    Abstract: Novel aromatic enediyne derivatives, organic semiconductor thin film using the same are provided to allow a coating by a normal temperature wet process. A method of manufacturing organic semiconductor thin film includes: coating a substrate with aromatic enediyne and precursor solution including organic solvent to form a coating film; and heating the coating film to form a thin film. The precursor solution is manufactured by mixing at least two kinds of the aromatic enediyne derivatives. The aromatic enediyne derivatives of 0.001 to 30 weight % is contained among the precursor solution of 100 %. The organic solvent is one selected from the group consisting of aliphatic hydrogen solvent, aromatic hydrocarbon solvent, ketone-based solvent, ether-based solvent, acetate-based solvent, alcohol-based solvent, amide-based solvent, halogen-base solvent, silicon-based solvent, or a compound thereof.

    Abstract translation: 提供新型芳香族烯二炔衍生物,使用其的有机半导体薄膜,以允许通过常温湿法涂覆。 一种制造有机半导体薄膜的方法包括:用芳族烯烃涂覆基材和包括有机溶剂的前体溶液以形成涂膜; 并加热涂膜以形成薄膜。 通过混合至少两种芳族烯二炔衍生物制备前体溶液。 在100%的前体溶液中含有0.001至30重量%的芳族烯二炔衍生物。 有机溶剂是选自脂族氢溶剂,芳烃溶剂,酮系溶剂,醚系溶剂,乙酸酯系溶剂,醇系溶剂,酰胺系溶剂,卤素系溶剂,硅 的溶剂或其化合物。

    불소를 포함하는 유기절연체 조성물 및 이를 이용한 유기박막 트랜지스터
    9.
    发明公开
    불소를 포함하는 유기절연체 조성물 및 이를 이용한 유기박막 트랜지스터 有权
    具有氟和有机半导体薄膜的有机绝缘体组合物

    公开(公告)号:KR1020070059283A

    公开(公告)日:2007-06-12

    申请号:KR1020050117964

    申请日:2005-12-06

    Abstract: Provided is an organic insulator composition, which has a fluorine-based surface treatment agent function to simplify a production process of an organic insulating film and improves charge mobility and hysteresis of an organic thin film transistor. The organic insulator composition comprises (i) a compound represented by a formula 1 of R1SiX1X2X3 or a formula 2 of R1R2SiX1X2, a mixture thereof, a polymer thereof, or a silane-based compound obtained by mixing or copolymerizing the compound with a compound represented by a formula 3 of SiX1X2X3X4, a formula 4 of R3SiX1X2X3, or a formula 5 of R3R4SiX1X2, (ii) an organometallic compound, (iii) an organic solvent, and (iv) an organic or inorganic polymer matrix.

    Abstract translation: 本发明提供一种具有氟系表面处理剂功能的有机绝缘体组合物,其简化了有机绝缘膜的制造工序,提高了有机薄膜晶体管的电荷迁移率和迟滞性。 有机绝缘体组合物包含(i)R1SiX1X2X3的式1化合物或R1R2SiX1X2的式2表示的化合物,其混合物,其聚合物或通过将化合物与下式表示的化合物混合或共聚获得的硅烷系化合物 SiX1X2X3X4的式3,R3SiX1X2X3的式4或R3R4SiX1X2的式5,(ii)有机金属化合物,(iii)有机溶剂和(iv)有机或无机聚合物基质。

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