Abstract:
압전 소자 및 그 제조방법이 개시된다. 개시된 압전 소자는, 압전층의 제1면 상에 마련되는 제1 및 제2 전극과, 상기 압전층의 제2면 상에 마련되는 제3 및 제4 전극과, 상기 제1 전극과 상기 제4 전극을 전기적으로 연결하는 제1 도체와, 상기 제2 전극과 상기 제3 전극을 전기적으로 연결하는 것으로, 상기 제1 도체와 교차하는 제2 도체;를 포함한다.
Abstract:
PURPOSE: A manufacturing method of templates for the nano-imprint lithography is provided to be able to more elaborately manufacture and correct the size, uniformity and alignment of the imprint pattern as the templates are manufactured by using a scanning lithography facility. CONSTITUTION: A manufacturing method of templates for the nano-imprint lithography comprises that a reticle (140) is installed on a reticle stage (130) in a scanning lithography facility (100) comprising a light source, the reticle stage and a template stage (170), that a template substrate (310) is mounted on the template stage, and that a tilt scanning process, that the center route of the light generated from the light source is irradiated on the template substrate at a tilt after the reticle, is performed. The scanning lithography facility further comprises a slit part (150) positioned between the reticle stage and the template stage. Most of the light passing through the reticle is blocked by a slit plate (151) in the slit part. A part of the light passing through the reticle passes a slit (155) in the slit part, and is irradiated on the template substrate. The reticle stage and the template stage move to the direction perpendicular to the long direction of the slit. The light is irradiated on the template substrate at a tilt by moving the reticle stage at a tilt.
Abstract:
PURPOSE: A reticle error detecting method is provided to directly detect a reticle error in a wafer level using only a 0 pear light among the diffraction light of a laser light. CONSTITUTION: A reticle(9) is installed on an exposure. A light is irradiated on the reticle using a light source(1) of the exposure. An error of the reticle is detected with only a zeroth diffraction light among a diffraction light passing through the reticle. The zeroth diffraction light is obtained by selecting a lighting system(5) on a pattern of the reticle. The reticle error is detected by measuring an image or the thickness variance of a photoresist film(13).
Abstract:
PURPOSE: A method for measuring focus variation of a photolithography device is provided to measure the focus variation using a pattern with low focus depth. CONSTITUTION: A mask pattern with the lowest focus depth is selected among a plurality of mask patterns(ST100). All spot regions are exposed on a wafer using the selected mask pattern(ST102). The focus variation of the photolithography device is measured using the information obtained from the exposed shot regions(ST112).