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公开(公告)号：KR100649859B1
公开(公告)日：2006-11-24
申请号：KR1020020069102
申请日：2002-11-08
Applicant: 제일모직주식회사
IPC: H01L21/304
Abstract: 본 발명은 반도체 디바이스 제조시 CMP(Chemical Mechanical Polishing) 공정에 적용되는 연마용 슬러리로서, (a) 금속산화물 미분말, (b) 과산화 화합물, (c) 벤젠계 화합물, (d) 암모늄염 또는 아민계 화합물, (e) 카르복실계 화합물 및 (f)탈이온수를 포함하는 구리배선 연마용 CMP 슬러리에 관한 것이며, 본 발명에 의하면 구리배선의 CMP 공정시 구리산화막의 다공성과 낮은 강도로 인한 디싱 및 침식 등의 문제를 방지함과 동시에 높은 연마속도를 달성할 수 있다.
반도체, 구리배선, CMP, 벤젠계 화합물, 암모늄염, 아민계 화합물, 다공성, 디싱, 침식-
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公开(公告)号：KR100497412B1
公开(公告)日：2005-06-28
申请号：KR1020020079245
申请日：2002-12-12
Applicant: 제일모직주식회사
IPC: C09K3/14
Abstract: 본 발명은 질소-함유 비이온성 계면활성제와 말단의 OH기가 탄소수 1~4개의 선형 또는 분지형 알킬기로 캡핑(Capping)된 비이온성 계면활성제의 사용에 의해 증점제로 사용된 고분자 셀룰로오스와 연마입자의 분산안정성이 극대화되고 상기 비이온성 계면활성제와 유기염기의 공동상승적인 작용에 의해 웨이퍼 상의 표면결함 발생률이 감소된 연마용 슬러리 조성물에 관한 것으로, 본 발명의 연마용 슬러리를 사용하면 고품질의 경면 실리콘 웨이퍼를 효율적으로 생산할 수 있다.
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公开(公告)号：KR100449611B1
公开(公告)日：2004-09-22
申请号：KR1020010087447
申请日：2001-12-28
Applicant: 제일모직주식회사
IPC: C09K3/14
Abstract: 본 발명은 반도체 디바이스(device) 제조시 웨이퍼의 평탄화를 목적으로 하는 CMP(Chemical Mechanical Polishing/Planarization) 공정에 사용되는 연마용 슬러리 조성물에 관한 것으로, 보다 상세하게는 금속산화물 미분말, 마그네슘계 화합물, 과산화수소, 인계 화합물, 질산 및 탈이온수를 포함하는 금속배선 연마용 슬러리조성물에 관한 것이며, 본 발명의 연마용 슬러리 조성물을 사용하면 높은 연마속도와 우수한 연마균일도를 달성할 수 있으며, 분산안정성이 높아 장기 보관이 용이하다.
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公开(公告)号：KR1020040052355A
公开(公告)日：2004-06-23
申请号：KR1020020080226
申请日：2002-12-16
Applicant: 제일모직주식회사
IPC: C09K3/14
CPC classification number: C09G1/02 , C01P2004/64 , C01P2006/12 , C09K3/1409 , C09K3/1463 , H01L21/3212
Abstract: PURPOSE: A slurry composition for polishing the oxide layer of a semiconductor device is provided, to improve polishing property and polishing uniformity. CONSTITUTION: The slurry composition comprises 0.1-50 wt% of a metal oxide fine powder; 0.1-1 wt% of an alkali base; 0.01-1 wt% of a kind of compound selected from the group consisting of primary, secondary and tertiary amines; 0.01-1 wt% of a quaternary ammonium base; 0.001-0.1 wt% of polyethylene glycol; and ultrapure water. Preferably the metal oxide fine powder is at least one selected from the group consisting of silica, alumina, ceria, zirconia and titania and has a size of primary particle of 10-70 nm, a specific surface area of 100-300 m2/g, a size of secondary particle of 100-200 nm and a OH concentration on surface of 0.5-4 /nm2; and the quaternary ammonium base is tetramethylammonium hydroxide; and the polyethylene glycol has a molecular weight of 15,000-25,000.
Abstract translation: 目的：提供一种用于抛光半导体器件的氧化物层的浆料组合物，以改善抛光性能和抛光均匀性。 构成：浆料组合物包含0.1-50重量％的金属氧化物细粉末; 0.1-1重量％的碱碱; 0.01-1重量％的选自伯胺，仲胺和叔胺的一种化合物; 0.01-1重量％的季铵碱; 0.001-0.1重量％的聚乙二醇; 和超纯水。 优选地，金属氧化物细粉末是选自二氧化硅，氧化铝，二氧化铈，氧化锆和二氧化钛中的至少一种，并且具有10-70nm的一次粒子的尺寸，100-300m 2 / g的比表面积， 二次粒子的尺寸为100-200nm，表面的OH浓度为0.5-4 / nm2; 季铵碱是四甲基氢氧化铵; 聚乙二醇的分子量为15,000-25,000。
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Patent Agency Ranking
公开(公告)号：KR100432637B1
公开(公告)日：2004-05-22
申请号：KR1020010047500
申请日：2001-08-07
Applicant: 제일모직주식회사
IPC: C09K3/14
Abstract: 본 발명은 반도체 집적회로 제조시 CMP(Chemical Mechanical Polishing) 공정에 사용되는 연마용 슬러리에 관한 것으로, 보다 상세하게는 아민계 화합물, 에스테르계 화합물, 술폰계 화합물, 과산화물, 금속산화물 미분말 및 탈이온수를 포함하는 구리배선 연마용 CMP 슬러리에 관한 것이며, 본 발명에 의하면 구리배선의 CMP 공정시 구리산화막의 다공성과 낮은 강도로 인한 디싱 및 침식 등의 문제를 방지함과 동시에 높은 연마속도를 달성할 수 있다.
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公开(公告)号：KR100421928B1
公开(公告)日：2004-03-11
申请号：KR1020010072563
申请日：2001-11-21
Applicant: 제일모직주식회사
IPC: H01L21/304
Abstract: PURPOSE: A slurry composition for polishing a metal line of a semiconductor wafer is provided to maintain constantly the oxidizing power of the slurry and obtain the uniform polishing speed by adding phosphoric compound for lowering the resolution of hydrogen peroxide to the slurry composition. CONSTITUTION: A slurry composition for polishing a metal line includes deionized water, metal oxide powders, iodic compound, hydrogen peroxide, phosphoric compound, and pH control agent. The metal oxide is selected from a group including silica, alumina, zirconia, and ceria. The iodic compound is selected from a group including iodobenzene diacetate, iodoacetic acid, and iodoethane. The phosphoric compound is formed with trimethyl phosphite or triethyl phosphite or the mixture of trimethyl phosphite and triethyl phosphite.
Abstract translation: 目的：提供一种用于抛光半导体晶片的金属线的浆料组合物，以通过向浆料组合物中添加用于降低过氧化氢的分辨率的磷化合物来恒定地保持浆料的氧化能力并获得均匀的抛光速度。 组成：用于抛光金属线的浆料组合物包括去离子水，金属氧化物粉末，碘化合物，过氧化氢，磷酸化合物和pH控制剂。 金属氧化物选自包括二氧化硅，氧化铝，氧化锆和二氧化铈的组。 碘化合物选自二乙酸碘苯，碘乙酸和碘乙烷。 磷酸化合物由亚磷酸三甲酯或亚磷酸三乙酯或亚磷酸三甲酯和亚磷酸三乙酯的混合物形成。
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公开(公告)号：KR1020030057079A
公开(公告)日：2003-07-04
申请号：KR1020010087451
申请日：2001-12-28
Applicant: 제일모직주식회사
IPC: C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/3212 , H01L21/7684
Abstract: PURPOSE: Provided is a slurry composition suitable for CMP(Chemical Mechanical Polishing/Planarization) process of metal line, which has a uniform polishing ability, and shows excellent dispersion stability when stored for a long time, and does not damage a grinding machine. CONSTITUTION: The slurry composition for polishing a metal line, contains 1-30 wt% of metal oxide granules, 0.01-1.0 wt% of iodine-based compound, 0.01-1.0 wt% of vinyl polymer, 0.25-2 wt% of hydrogen peroxide, 0.01-0.05 wt% of phosphorus-based compound, 0.3-0.5 wt% of nitric acid, and the rest of deionized water. The metal oxide is at least one compound selected from the group consisting of silica(SiO2), alumina(Al2O3), zirconia, and ceria, the iodine-based compound is at least one compound selected from the group consisting of iodobenzene diacetate, iodobenzoic acid, and iodoaniline, the vinyl polymer is poly(vinyl alcohol) having average molecular weight of 9,000-50,000, and the phosphorus-based compound is trimethyl phosphite or triethyl phosphite.
Abstract translation: 目的：提供适用于具有均匀研磨能力的金属线的CMP（化学机械抛光/平面化）方法的浆料组合物，并且长期储存时显示优异的分散稳定性，并且不会损坏研磨机。 构成：用于研磨金属线的浆料组合物含有1-30重量％的金属氧化物颗粒，0.01-1.0重量％的碘基化合物，0.01-1.0重量％的乙烯基聚合物，0.25-2重量％的过氧化氢 ，0.01-0.05重量％的磷基化合物，0.3-0.5重量％的硝酸和其余的去离子水。 所述金属氧化物是选自二氧化硅（SiO 2），氧化铝（Al 2 O 3），氧化锆和二氧化铈中的至少一种化合物，所述碘系化合物为选自二苯乙酮，碘代苯甲酸 和碘苯胺，乙烯基聚合物是平均分子量为9,000-50,000的聚（乙烯醇），磷系化合物是亚磷酸三甲酯或亚磷酸三乙酯。
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公开(公告)号：KR1020030047383A
公开(公告)日：2003-06-18
申请号：KR1020010077859
申请日：2001-12-10
Applicant: 제일모직주식회사
IPC: C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/3212 , H01L21/7684
Abstract: PURPOSE: A slurry composition for polishing the metal wire is provided, which is improved in polishing velocity, polishing uniformity and long-termed storage due to dispersion stability. CONSTITUTION: The slurry composition comprises 1-30 wt% of fine-powdered metal oxide; 0.01-0.5 wt% of an iodine-based compound; 0.25-2 wt% of hydrogen peroxide; 0.01-0.05 wt% of a phosphorus-based compound; 0.03-0.05 wt% of acetic acid; and the balance of deionized water. Preferably the metal oxide is silica (SiO2) and/or alumina (Al2O3); the iodine-based compound is at least one selected from the group consisting o-iodobenzoic acid, 4-iodobenzoic acid, o-iodoaniline, m-iodoaniline and p-iodoanisole; and the phosphorus-based compound is trimethyl phosphorous acid and/or triethyl phosphorous acid.
Abstract translation: 目的：提供用于抛光金属丝的浆料组合物，其由于分散稳定性而提高了抛光速度，抛光均匀性和长期储存。 构成：浆料组合物包含1-30重量％的细粉末金属氧化物; 0.01-0.5重量％的碘基化合物; 0.25-2重量％的过氧化氢; 0.01-0.05重量％的磷系化合物; 0.03-0.05重量％的乙酸; 和去离子水的平衡。 优选地，金属氧化物是二氧化硅（SiO 2）和/或氧化铝（Al 2 O 3）; 该碘系化合物为选自邻碘苯甲酸，4-碘苯甲酸，邻碘苯胺，间碘苯胺和对碘苯甲醚中的至少一种。 磷系化合物为三甲基亚磷酸和/或三乙基亚磷酸。
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公开(公告)号：KR1020030013162A
公开(公告)日：2003-02-14
申请号：KR1020010047502
申请日：2001-08-07
Applicant: 제일모직주식회사
IPC: H01L21/302
Abstract: PURPOSE: A method for fabricating metal oxide slurry for CMP to reduce the amount of defect is provided to improve defects by controlling sintered diamond used as a raw material of an orifice. CONSTITUTION: A premixer(1) is used for mixing metal oxide with deionized to form a metal oxide slurry of predetermined density. The metal oxide slurry is injected into an orifice of a distribution chamber(3) by using an intensifier pump(2). The metal oxide slurry is dispersed in the inside of the distribution chamber(3). The chamber is formed with a sintered diamond instead of engineering plastic, tempered glass plastic, carbon steel, SUS, and ceramic. The sintered diamond is fabricated by using a compact shape. A diameter of particles of the diamond compact is about 15 micro meter. The diamond compact is fabricated by using particles of Co.
Abstract translation: 目的：提供一种用于制造用于CMP的金属氧化物浆料以减少缺陷量的方法，以通过控制用作孔口原料的烧结金刚石来改善缺陷。 构成：预混合器（1）用于将金属氧化物与去离子体混合以形成预定密度的金属氧化物浆料。 通过使用增压泵（2）将金属氧化物浆料注入到分配室（3）的孔中。 金属氧化物浆料分散在分配室（3）的内部。 该室由烧结金刚石形成，而不是工程塑料，钢化玻璃塑料，碳钢，SUS和陶瓷。 通过使用紧凑的形状制造烧结金刚石。 金刚石压块的颗粒直径约为15微米。 金刚石致密体通过使用公司的粒子制造
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