公开(公告)号：KR1020090069593A

公开(公告)日：2009-07-01

申请号：KR1020070137305

申请日：2007-12-26

Applicant: 포항공과대학교 산학협력단

Inventor： 조문호 ,  우윤성

IPC: B82B3/00 ,  C01B33/113 ,  B82Y40/00

CPC classification number: C01B33/00 ,  B82B3/0038 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/16

Abstract: A method and an apparatus for manufacturing nanodevice are provided to employ both a silicon substrate and a quartz substrate, thereby shortening a manufacturing process and reducing production costs. A method for manufacturing nanodevice comprises the following steps of: supplying silicon source gas into a chamber(10); controlling the temperature of a substrate(20) adopted in the chamber in order to form a temperature gradient on the substrate; and forming nanowire growing in a vertical direction of the substrate according to the temperature gradient. In the temperature controlling step, the substrate is cooled down by the air or cooling water. The air or cooling water is indirectly contacted to the substrate.

Abstract translation: 提供了一种用于制造纳米器件的方法和装置，以同时采用硅衬底和石英衬底，从而缩短制造工艺并降低生产成本。 制造纳米器件的方法包括以下步骤：将硅源气体供应到腔室（10）中; 控制在室中采用的基板（20）的温度，以在基板上形成温度梯度; 并根据温度梯度在基板的垂直方向上形成纳米线。 在温度控制步骤中，基板被空气或冷却水冷却。 空气或冷却水与衬底间接接触。