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公开(公告)号:KR100928197B1
公开(公告)日:2009-11-25
申请号:KR1020070122771
申请日:2007-11-29
Applicant: 한국과학기술연구원
IPC: G11B7/2433 , G11B7/253
CPC classification number: G11B7/24 , G02F1/3523 , G11B7/252 , Y10T428/21 , Y10T428/26
Abstract: 본 발명은 고밀도 광 정보 재생 및 기록용 초해상 재료에 관한 것으로서, 입사광의 파장 영역에서 광의 흡수 및 가열에 따라 광 투과도가 증가하는 특성을 갖는 반도체 물질, 및 질소, 산소, 탄소 및 붕소 중에서 선택되는 1종 이상의 원소를 포함하는 본 발명에 따른 초해상 재료는 작은 결정립의 안정한 미세조직을 가지며 열전도도가 작아서 레이저 파워의 감소와 함께 높은 신호대 잡음비, 그리고 반복 재생 또는 기록에 대한 내구특성의 향상이 기대되어 하나 또는 그 이상의 정보저장층을 갖는 재생전용형 또는 한번쓰기형 또는 되쓰기형 광 정보저장매체에 효과적으로 적용할 수 있다.
광디스크, 초해상, 반도체, 칼코지나이드(chalcogenide), 열전도도Abstract translation: 一种用于记录和再现光学信息的超分辨率材料,包括半导体材料,其具有随入射辐射强度增加而增加的透射率,以及一种或多种选自氮(N),氧(O) ),碳(C)和硼(B)。
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公开(公告)号:KR1020050094279A
公开(公告)日:2005-09-27
申请号:KR1020040019455
申请日:2004-03-22
Applicant: 한국과학기술연구원 , 에스케이씨 주식회사
IPC: G11B7/243
CPC classification number: G11B7/243 , G11B7/24 , G11B2007/24312 , Y10T428/21
Abstract: 본 발명은 광 정보저장 매체에 관한 것으로서, 입사빔의 파장영역에서 광 흡수 및 광 투과가 일어나며, 용융온도 이하에서 구조적, 화학적 변화 없이 안정한 단일상의 고상상태가 유지되고, 광 흡수에 따른 가열에 의하여 열전효과에 따른 전기장이 발생되는 초해상층을 포함하여 구성되며, 상기 초해상층에서 발생되는 전기장이 입사빔의 전기장과 상호작용하여 광 정보를 초해상 재생 또는 기록하는 것을 특징으로 하는 광 정보저장 매체를 제공한다.
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公开(公告)号:KR1020040071524A
公开(公告)日:2004-08-12
申请号:KR1020030007541
申请日:2003-02-06
Applicant: 한국과학기술연구원
IPC: G11B7/26
Abstract: PURPOSE: A method for evaluating properties of a nonvolatile phase change memory material is provided to apply a pulse-type electric energy, and to measure phase change properties of a memory material by using an energy applying unit and a synchronized optical unit in real time, thereby improving the phase change properties. CONSTITUTION: A continuous laser beam(36) is focused/incident through a laser light source having a specific wavelength within a range of visible light. The continuous laser beam(36) detects intensity changes of a light(37) reflected from memory areas(33a,33b) or a transmitted light(38) in real time. An optical pulse is used for heating purpose instead of an electric pulse. The electric pulse is used to detect signals in real time.
Abstract translation: 目的:提供一种用于评估非易失性相变存储材料的性能的方法以施加脉冲型电能,并且通过使用能量施加单元和同步光学单元实时测量存储材料的相变特性, 从而改善相变性。 构成:连续的激光束(36)通过具有在可见光范围内的特定波长的激光光源聚焦/入射。 连续激光束(36)实时地检测从存储区域(33a,33b)或透射光(38)反射的光(37)的强度变化。 光脉冲用于加热而不是电脉冲。 电脉冲用于实时检测信号。
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公开(公告)号:KR100375333B1
公开(公告)日:2003-03-06
申请号:KR1020010004666
申请日:2001-01-31
Applicant: 한국과학기술연구원
IPC: C23C14/00
Abstract: PURPOSE: An apparatus and a method for coating and surface treatment using a single source are provided which enable coating and surface treatment on all solid phase metals and insulating materials at ordinary temperature using the single source. CONSTITUTION: The apparatus for coating and surface treatment using a single source comprises a laser(1) generating laser light; a light assembly(2) for focusing and scanning the laser light generated by the laser(1); a target(7) which is an evaporation source of plasma generated by the laser light; a target holder(9) on which the target(7) is mounted; a high voltage pulse generation part(5) supplying high voltage of pulse mode to the target(7); a high voltage feedthrough(6) supplying the high voltage pulse outputted from the high voltage pulse generation part(5) to the target(7); a matrix(8) which is an object for coating and surface reforming using plasma of the target(7) generated by the laser light of the pulse mode that is generated by the laser(1); a matrix holder(10) on which the matrix(8) is mounted; a vacuum chamber(4) maintaining certain degrees of vacuum as containing the target(7), target holder(9), matrix(8) and matrix holder(10) in the vacuum chamber(4); and a vacuum system constantly maintaining a degree of vacuum of the vacuum chamber(4).
Abstract translation: 目的:提供一种使用单一来源进行涂布和表面处理的设备和方法,其能够使用单一来源在常温下对所有固相金属和绝缘材料进行涂布和表面处理。 构成:使用单一源的涂层和表面处理装置包括产生激光的激光器(1) (2),用于聚焦和扫描由激光器(1)产生的激光; 靶(7),其是由激光产生的等离子体的蒸发源; 目标支架(9),所述目标(7)安装在所述目标支架上; 高电压脉冲发生部分(5),向目标(7)提供脉冲模式的高电压; 高电压馈通(6),将从高电压脉冲产生部分(5)输出的高电压脉冲提供给目标(7); 矩阵(8),其是利用由激光器(1)产生的脉冲模式的激光产生的靶(7)的等离子体进行涂覆和表面改性的对象; 矩阵支架(10),矩阵(8)安装在该矩阵支架上; 真空腔室(4),其保持一定程度的真空,以容纳真空室(4)中的靶(7),靶座(9),基体(8)和基体保持器(10); 以及恒定地保持真空室(4)的真空度的真空系统。
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公开(公告)号:KR1020020088488A
公开(公告)日:2002-11-29
申请号:KR1020010026976
申请日:2001-05-17
Applicant: 한국과학기술연구원
IPC: H01B1/08
Abstract: PURPOSE: Provided is a multi-layer structured transparent conductive film excellent in light permeability and conductivity, which can be used as a transparent electrode of a flat-plate display such as TFT-LCD, PDP, FED, ELD, OELD and can be used for shielding electromagnetic waves. CONSTITUTION: The multi-layer structured transparent conductive film comprises transparent films and metal films formed on a substrate by turns, wherein the transparent film is made of at least one selected from a dielectric material, an oxide material, or a polymer material capable of transmitting light in a visible ray range and the metal film is at least one selected from the group consisting of Ag, Au, Cu, Pd, Pt, Ni, Al, Y, La, Mg, Ca, Li, K, Na, Cr, and etc. and the thickness of the metal film is 5-50nm.
Abstract translation: 目的:提供透光性和导电性优异的多层结构的透明导电膜,其可以用作TFT-LCD,PDP,FED,ELD,OELD等平板显示器的透明电极,并且可以使用 用于屏蔽电磁波。 构成:多层结构的透明导电膜包括透明膜和在基板上轮流形成的金属膜,其中透明膜由选自介电材料,氧化物材料或能够传输的聚合物材料中的至少一种制成 可见光范围内的光,金属膜为选自Ag,Au,Cu,Pd,Pt,Ni,Al,Y,La,Mg,Ca,Li,K,Na,Cr, 并且金属膜的厚度为5-50nm。
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公开(公告)号:KR1020020076523A
公开(公告)日:2002-10-11
申请号:KR1020010016425
申请日:2001-03-29
Applicant: 한국과학기술연구원 , 에스케이씨 주식회사
IPC: G11B7/2433
CPC classification number: G11B7/243 , G11B7/00454 , G11B2007/24306 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
Abstract: PURPOSE: A phase change type optical recording material for a rewrite type optical recording medium is provided to enable high-speed crystallization corresponding to increases in high-intensity and data transfer rate. CONSTITUTION: A phase change type optical recording material for a rewrite type optical recording medium is composed of a stoichiometric GeSbTe-based alloy and a ternary alloy(ABC) having the same crystal structure as the GeSbTe-based alloy in a composition of (Aa Bb Cc)_x(Ge_a Sb_b Te_c)_1-x, wherein x is an atomic mole fraction, and larger than 0 and smaller than 1; a,b,c represent atomic molar ratio; A is an element belonging to the IV group, B is an element belonging to the V group, C is an element belonging to the VI group.
Abstract translation: 目的:提供一种用于重写型光学记录介质的相变型光学记录材料,以便能够实现高强度和高数据传输速率的高速结晶。 构成:用于重写型光学记录介质的相变型光学记录材料由化学计量的GeSbTe基合金和具有与GeSbTe基合金相同的晶体结构的三元合金(ABC)组成(Aa Bb Cc)_x(Ge_a Sb_b Te_c)_1-x,其中x是原子摩尔分数,大于0且小于1; a,b,c表示原子摩尔比; A是属于IV组的元素,B是属于V族的元素,C是属于VI族的元素。
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公开(公告)号:KR1019960008148B1
公开(公告)日:1996-06-20
申请号:KR1019930027954
申请日:1993-12-16
Applicant: 한국과학기술연구원
IPC: C23C14/00
Abstract: This process produces the green coating of a composite micro-structure having gold/metal nitride, gold/metal oxide or gold/metal nitride-oxide in mixture. The composition of gold is reduced from the surface to the inner of the coating in the thickness gradient of 100 to 10,000 angstrom. The metal element of gold/metal alloy is selected from the group of aluminum, silicon and tantalum. The coating is produced by evaporation of gold alloy source under the plasma atmosphere of the inert gas containing nitrogen, oxygen or nitrogen-oxygen mixed gas. The evaporation method is selected from magnetron sputtering, ion beam sputtering and ion plating. The gold alloy source as mentioned above is formed by the process selected from electro-resistance heating method, electron-gun heating method, hollow cathode heating method and high frequency induction melting method.
Abstract translation: 该方法产生具有金/金属氮化物,金/金属氧化物或金/金属氮化物 - 氧化物的复合微结构的绿色涂层。 在100至10,000埃的厚度梯度下,金的组成从表面到内层减少。 金/金属合金的金属元素选自铝,硅和钽。 通过在含有氮气,氧气或氮气 - 氧气混合气体的惰性气体的等离子体气氛中蒸发金合金源来生产涂层。 蒸发方法选自磁控溅射,离子束溅射和离子电镀。 如上所述的金合金源通过选自电阻加热法,电子枪加热法,中空阴极加热法和高频感应熔炼法的方法形成。
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公开(公告)号:KR102086809B1
公开(公告)日:2020-03-06
申请号:KR1020180058387
申请日:2018-05-23
Applicant: 한국과학기술연구원
IPC: H01L31/0725 , H01L31/032 , H01L31/0232 , H01L31/036 , H01L31/0224 , H01L31/0445
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公开(公告)号:KR102044381B1
公开(公告)日:2019-11-13
申请号:KR1020180045160
申请日:2018-04-18
Applicant: 한국과학기술연구원
IPC: H01L31/18 , H01L31/0216 , H01L31/032
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公开(公告)号:KR101873859B1
公开(公告)日:2018-07-04
申请号:KR1020160138547
申请日:2016-10-24
Applicant: 한국과학기술연구원
IPC: H01L21/28 , H01L21/283 , H01L21/324 , H01L21/203 , H01L21/205
Abstract: 본발명은박막증착시반응성가스를혼입시켜금속의계면에너지를낮춤으로써아일랜드(island) 성장의억제하여연속적이고도균질한초박형박막성장을가능하게함과함께박막성장후 열처리또는광조사등의후처리를통해반응성가스성분을제거함으로써박막의전기적특성및 광학특성을향상시킬수 있는초박형금속연속박막및 그제조방법에관한것으로서, 본발명에따른초박형금속연속박막제조방법은증착대상금속을기판상에증착하여박막을형성함에있어서, 상기박막의형성시, 반응성가스를공급하여반응성가스가박막내에혼입되도록유도하는단계; 및형성된박막내의반응성가스성분을제거하는단계를포함하여이루어지는것을특징으로한다.
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