Abstract:
PURPOSE: A method for evaluating properties of a nonvolatile phase change memory material is provided to apply a pulse-type electric energy, and to measure phase change properties of a memory material by using an energy applying unit and a synchronized optical unit in real time, thereby improving the phase change properties. CONSTITUTION: A continuous laser beam(36) is focused/incident through a laser light source having a specific wavelength within a range of visible light. The continuous laser beam(36) detects intensity changes of a light(37) reflected from memory areas(33a,33b) or a transmitted light(38) in real time. An optical pulse is used for heating purpose instead of an electric pulse. The electric pulse is used to detect signals in real time.
Abstract:
PURPOSE: Provided is a multi-layer structured transparent conductive film excellent in light permeability and conductivity, which can be used as a transparent electrode of a flat-plate display such as TFT-LCD, PDP, FED, ELD, OELD and can be used for shielding electromagnetic waves. CONSTITUTION: The multi-layer structured transparent conductive film comprises transparent films and metal films formed on a substrate by turns, wherein the transparent film is made of at least one selected from a dielectric material, an oxide material, or a polymer material capable of transmitting light in a visible ray range and the metal film is at least one selected from the group consisting of Ag, Au, Cu, Pd, Pt, Ni, Al, Y, La, Mg, Ca, Li, K, Na, Cr, and etc. and the thickness of the metal film is 5-50nm.
Abstract:
PURPOSE: A phase change type optical recording material for a rewrite type optical recording medium is provided to enable high-speed crystallization corresponding to increases in high-intensity and data transfer rate. CONSTITUTION: A phase change type optical recording material for a rewrite type optical recording medium is composed of a stoichiometric GeSbTe-based alloy and a ternary alloy(ABC) having the same crystal structure as the GeSbTe-based alloy in a composition of (Aa Bb Cc)_x(Ge_a Sb_b Te_c)_1-x, wherein x is an atomic mole fraction, and larger than 0 and smaller than 1; a,b,c represent atomic molar ratio; A is an element belonging to the IV group, B is an element belonging to the V group, C is an element belonging to the VI group.
Abstract:
박막형태양전지는텍스처링된영역을부분적으로포함하는능동층; 상기능동층상에위치하는필름층; 및상기필름층상에위치하며, 입사광을상기텍스처링된영역에집속시키도록배치된하나이상의렌즈를포함하는렌즈어레이를포함할수 있다. 또한, 박막형태양전지제조방법은능동층에부분적으로텍스처링된영역을형성하는단계; 및상기텍스처링된영역을포함하는능동층위에, 입사광을상기텍스처링된영역에집속시키도록배치된하나이상의렌즈를포함하는렌즈어레이및 필름층을포함하는광집속층을위치시키는단계를포함할수 있다. 또, 태양전지의효율증대방법은하나이상의렌즈를포함하는렌즈어레이에의해입사광을집속시키는단계; 상기집속된입사광을, 박막형태양전지의능동층에형성된텍스처링된영역에입사시키는단계; 및상기텍스처링된영역에입사된입사광을상기능동층에의해전기에너지로변환하는단계를포함할수 있다.