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公开(公告)号：KR1020180016786A
公开(公告)日：2018-02-20
申请号：KR1020160100552
申请日：2016-08-08
Applicant: 한국과학기술연구원
CPC classification number: C25B11/0415 , B82Y30/00 , B82Y40/00 , C23C16/32 , C23C16/503 , C23C16/56 , C25B11/02 , C25B11/0447 , Y02E60/366 , C01G41/00 , C01P2004/24 , C23C16/50 , C23C16/505 , C23C16/52 , C25B1/04
Abstract: 텅스텐카바이드나노플레이크(nanoflake)를이용한수소생산용전극의제조방법은, 수소플라즈마가인가되는화학기상증착공정을이용하여, 나노결정다이아몬드박막상에텅스텐카바이드나노플레이크를제조하는단계; 및상기텅스텐카바이드나노플레이크의표면으로부터산화물층또는그래핀층을제거함으로써상기텅스텐카바이드나노플레이크의수소발생반응에대한활성을증가시키는단계를포함한다. 텅스텐카바이드형성후 사이클릭세정(cyclic cleaning)을통하여텅스텐카바이드표면의산화물층및/또는그래핀층을제거함으로써, 텅스텐카바이드의수소발생반응(Hydrogen Evolution Reaction) 활성을증가시켜촉매전극으로서의활용도를높일수 있다.
Abstract translation: 使用（纳米片）制造电极用于氢气生产的碳化钨纳米片方法包括：使用在其中应用氢等离子体的化学气相沉积工艺，制造纳米晶体金刚石薄膜的碳化钨纳米片箔片的步骤; 和一个步骤，以通过从所述被钉扎层或是碳化钨纳米片的表面除去氧化物层增加所述碳化钨纳米片的氢生成反应的活性。 通过去除该氧化物层和/或是在表面碳化钨钉扎层之间的通过点击洗涤（环状清洗）碳化钨形成后，通过增大氢产生反应（析氢反应）的活性碳化钨可以增强利用作为催化剂的电极 。
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公开(公告)号：KR101802744B1
公开(公告)日：2017-11-29
申请号：KR1020150121950
申请日：2015-08-28
Applicant: 한국과학기술연구원
IPC: H01L31/0445 , H01L31/0392 , H01L31/18 , H01L31/0216
CPC classification number: Y02E10/50
Abstract: 본발명에따른초박형실리콘태양전지를위한비대칭적나노격자구조는경사증착법에의해대칭형나노격자를갖는실리콘을소정각도만큼경사지게위치시킨후, 실리콘후면에유전체를증착시켜실리콘과유전체의복합체형태의비대칭적나노격자구조를갖도록하되, 실리콘의전면에유전체의나노콘형태의무반사막을배치시켜전기적인손실을저감하면서동시에광포집효과를극대화할수 있는효과가있다.
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公开(公告)号：KR101313753B1
公开(公告)日：2013-10-14
申请号：KR1020120049140
申请日：2012-05-09
Applicant: 한국과학기술연구원
CPC classification number: C23C16/26 , B82Y30/00 , B82Y40/00 , C01B32/18 , Y10S977/842 , Y10T428/25
Abstract: PURPOSE: A method for growing carbon nanoflakes and a carbon nanoflake structure formed by the same are provided to enable a user to easily grow nanoflakes without an additional catalyst or plasma. CONSTITUTION: A method for growing carbon nanoflake comprises the steps of: preparing a silicone substrate equipped with carbon nanotubes; growing carbon nanoflakes on carbon nanotubes in a chemical vapor-deposition process using the mixing gas of methane, hydrogen and argon as a precursor. In the chemical vapor-deposition process, argon is excessive in the mixing gas of methane, hydrogen and argon. Graphene layers constituting carbon nanotubes are partially etched in an argon-excessive atmosphere. Graphene layers of carbon nanoflakes grow at the position of etching. [Reference numerals] (CNT,CNF) Graphene layer
Abstract translation: 目的：提供用于生长碳纳米片和由其形成的碳纳米沉淀结构的方法，以使使用者能够容易地在没有另外的催化剂或等离子体的情况下生长纳米片。 构成：生长碳纳米片的方法包括以下步骤：制备配备有碳纳米管的硅树脂基材; 在使用甲烷，氢气和氩气的混合气体作为前体的化学气相沉积方法中在碳纳米管上生长碳纳米片。 在化学气相沉积过程中，在甲烷，氢气和氩气的混合气体中氩气过多。 构成碳纳米管的石墨烯层在氩气过量的气氛中被部分蚀刻。 碳纳米片的石墨烯层在蚀刻位置生长。 （参考标号）（CNT，CNF）石墨烯层
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公开(公告)号：KR1020130109795A
公开(公告)日：2013-10-08
申请号：KR1020120031830
申请日：2012-03-28
Applicant: 한국과학기술연구원
CPC classification number: C23C16/27 , C23C16/02 , C23C16/0254 , C23C16/271 , C23C16/272 , B82B3/00 , C01B32/25
Abstract: PURPOSE: A method for manufacturing a nano-crystalline diamond thin film is provided to maximize the electrostatic attraction between the substrate surface and the nano-diamond particles, thereby uniformly distributing and coupling the nano-diamond particles on the silicon oxide film of the substrate. CONSTITUTION: A method for manufacturing a nano-crystalline diamond thin film comprises the following steps. A silicone substrate surface coated with a silicon oxide film (SiO2) is processed with the hydro plasma or the plasma mixed with hydrogen and hydrocarbon or the silicone substrate surface is heat-treated under the mixed gas atmosphere with the hydrogen and hydrocarbon. After the coated substrate is put in the solution in which nano-diamond particles are dispersed, the nano-diamond particles are scattered on the substrate and are coupled with the substrate surface by emitting ultrasound. In a state where the nano-diamond particles are coupled to the substrate through the ultrasound scattering step, the diamond thin film is grown by applying the process of chemical vapor deposition.
Abstract translation: 目的：提供一种用于制造纳米晶体金刚石薄膜的方法，以使衬底表面和纳米金刚石颗粒之间的静电吸引力最大化，从而将纳米金刚石颗粒均匀地分布并耦合在衬底的氧化硅膜上。 构成：制造纳米晶体金刚石薄膜的方法包括以下步骤。 涂覆有氧化硅膜（SiO 2）的硅树脂基材表面用氢等离子体或等离子体与氢气和烃混合，或者在混合气体气氛下与氢气和烃进行热处理。 将涂布的基材放入其中分散有纳米金刚石颗粒的溶液中后，纳米金刚石颗粒被散射在基材上并通过发射超声波与基板表面耦合。 在通过超声波散射步骤将纳米金刚石颗粒与基底结合的状态下，通过施加化学气相沉积的方法生长金刚石薄膜。
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Patent Agency Ranking
公开(公告)号：KR1020130091468A
公开(公告)日：2013-08-19
申请号：KR1020120012767
申请日：2012-02-08
Applicant: 한국과학기술연구원
IPC: H01L23/373
CPC classification number: H01L23/3732 , H01L21/0337 , H01L21/205 , H01L21/449
Abstract: PURPOSE: A diamond heat spreader and a manufacturing method thereof are provided to maximize heat conductivity by increasing a ratio of columnar particles which are horizontally arranged on a substrate. CONSTITUTION: The cross section of a diamond crystal structure has a radial columnar structure. Columnar particles are radially arranged on the radial columnar structure. Each radial columnar structure is grown around a seed point by a chemical vapor deposition process. The seed point is locally formed on the substrate. Diamond particles are separately arranged on the substrate. [Reference numerals] (AA) Radial columnar tissue; (BB) Diamond columnar particle; (CC) Grain boundary; (DD) Substrate; (EE) Seed point
Abstract translation: 目的：提供一种金刚石散热器及其制造方法，以通过增加水平布置在基板上的柱状颗粒的比例来最大限度地提高导热性。 构成：金刚石晶体结构的横截面具有径向柱状结构。 柱状颗粒径向布置在径向柱状结构上。 每个径向柱状结构通过化学气相沉积工艺在种子点附近生长。 种子点局部形成在基底上。 金刚石颗粒分别布置在基底上。 （标号）（AA）径向柱状组织; （BB）金刚石柱状颗粒; （CC）谷物边界; （DD）基材; （EE）种子点
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公开(公告)号：KR1020130076189A
公开(公告)日：2013-07-08
申请号：KR1020110144676
申请日：2011-12-28
Applicant: 한국과학기술연구원
CPC classification number: H01L31/186 , B82Y15/00 , G01N21/554 , G01N33/54373 , G02B5/008 , H01L31/0324 , H01L31/18
Abstract: PURPOSE: A local surface plasmon resonance (LSPR) sensor using a chalcogenide material and a manufacturing method thereof are provided to control a composition ratio of a chalcogenide material forming an LSPR excitation layer, thereby variously changing the carrier concentration of the LSPR excitation layer. CONSTITUTION: An LSPR sensor using a chalcogenide material includes an LSPR excitation layer formed of a chalcogenide material. The chalcogenide material includes a first material and a second material. The first material includes at least one among selenium and tellurium. The second material includes at least one among germanium and antimony.
Abstract translation: 目的：提供使用硫族化物材料的局部表面等离子体共振（LSPR）传感器及其制造方法，以控制形成LSPR激发层的硫族化物材料的组成比，从而不同地改变LSPR激发层的载流子浓度。 构成：使用硫族化物材料的LSPR传感器包括由硫族化物材料形成的LSPR激发层。 硫族化物材料包括第一材料和第二材料。 第一种材料包括硒和碲中的至少一种。 第二种材料包括锗和锑中的至少一种。
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公开(公告)号：KR101165329B1
公开(公告)日：2012-07-18
申请号：KR1020120046828
申请日：2012-05-03
Applicant: 한국과학기술연구원
CPC classification number: C23C16/342 , C23C14/024 , C23C14/06 , C23C14/0647 , C23C14/34 , C23C14/46 , C23C16/271 , Y10T428/30
Abstract: PURPOSE: A cBN(cubic Boron Nitride) film and a manufacturing method thereof are provided to restrict harmful effects on the surface of nano-crystalline diamond and the residual stress applied to cBN by adding hydrogen in reactive gas and controlling the timing of hydrogen supply during synthesis of cBN. CONSTITUTION: A method for manufacturing a cBN film is as follows. A cBN film is formed on a nano crystalline diamond film through a PVD(Physical Vapor Deposition) process. In the PVD process, reactive gas supplied at the timing of film deposition is a mixed gas of Ar and N2. H2 is added to the reactive gas at a specific time after the film deposition.
Abstract translation: 目的：提供一种cBN（立方氮化硼）膜及其制造方法，以通过在反应气体中加入氢气来限制对纳米晶金刚石表面的有害影响和施加到cBN上的残余应力，并控制氢气供应时间 合成cBN。 构成：制造cBN膜的方法如下。 通过PVD（物理气相沉积）工艺在纳米结晶金刚石膜上形成cBN膜。 在PVD工艺中，在膜沉积时提供的反应气体是Ar和N2的混合气体。 在成膜后的特定时间将H 2加入到反应气体中。
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公开(公告)号：KR101019029B1
公开(公告)日：2011-03-04
申请号：KR1020080080167
申请日：2008-08-14
Applicant: 한국과학기술연구원
CPC classification number: C30B29/02 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C01B32/188 , C23C16/01 , C23C16/26 , C30B25/02 , C30B29/04 , Y10S977/742 , Y10T428/30
Abstract: 본 발명은 모재와 그라핀이 화학적으로 결합된 그라핀 하이브리드 물질 및 화학기상증착(CVD)법을 이용하여 상기 그라핀 하이브리드 물질을 제조하는 방법에 관한 것으로서, 표면에 단절된 격자 면을 갖는 모재와, 상기 모재 표면의 단절된 격자 면을 따라 에피택셜 성장된 그라핀을 포함하여 이루어진 것을 특징으로 하는 그라핀 하이브리드 물질을 제공한다. 본 발명에 의하면 그라핀을 직경 8 인치 이상의 대면적으로 제조할 수도 있다.
본 발명에 따른 그라핀 하이브리드 물질은 체내 이식형 바이오칩, 차세대 반도체 소자, 전자 에미터 등과 같은 탄소나노튜브의 응용 분야에 사용될 수 있다. 본 발명의 그라핀은 나노 사이즈보다 작은 분자 수준으로 제어될 수 있으므로, 탄소나노튜브보다 더 뛰어난 특성을 발휘한다. 또한, 그라핀 간 거리가 흑연의 것보다 10∼20% 큰 특성을 이용하면, 그라핀은 다양한 GIC (Graphite Intercalation Compound) 신물질 개발에 응용될 수 있다.
그라핀, 탄소, 분자, 나노, CVD 합성, 다이아몬드, 하이브리드 물질-
公开(公告)号：KR1020100063312A
公开(公告)日：2010-06-11
申请号：KR1020080121776
申请日：2008-12-03
Applicant: 한국과학기술연구원
CPC classification number: C04B41/91 , C04B41/4535 , C04B41/455 , C04B41/89 , C04B2235/427
Abstract: PURPOSE: A ceramic body coated with a diamond film, and a manufacturing method thereof are provided to induce the strong mechanical bond between the ceramic body and the diamond film by forming uneven embossments. CONSTITUTION: A manufacturing method of a ceramic body coated with a diamond film comprises the following steps: forming a surface layer by spreading a mixture composition including ceramic particles and a matrix phase on the ceramic body; forming uneven embossments on the surface layer by removing the matrix phase; and adhering the diamond film on the surface layer. The surface layer contains 50~90% of ceramic particles. The surface layer is formed by a bonding reaction, a sintering reaction, or a crystallization reaction. The matrix phase is removed by a wet etching, a dry etching, or a sand blast.
Abstract translation: 目的：提供一种涂有金刚石薄膜的陶瓷体及其制造方法，通过形成不均匀的压纹来诱导陶瓷体与金刚石薄膜之间的强机械结合。 构成：涂覆有金刚石膜的陶瓷体的制造方法包括以下步骤：通过将包括陶瓷颗粒和基质相的混合物组合物铺展在陶瓷体上而形成表面层; 通过去除基体相在表面层上形成不均匀的凸起; 并将金刚石膜粘附在表面层上。 表层含有50〜90％的陶瓷颗粒。 表面层通过结合反应，烧结反应或结晶反应形成。 通过湿法蚀刻，干蚀刻或喷砂除去基质相。
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