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21.发明公开
公开(公告)号：KR1020090060145A
公开(公告)日：2009-06-11
申请号：KR1020080114541
申请日：2008-11-18
Applicant: 한국전자통신연구원
IPC: H01L21/203 , H01L29/786 , H01L45/00
CPC classification number: H01L45/141
Abstract: A method for manufacturing N-type and P-type chalcogenide material, a chalcogenide thin film transistor, and a manufacturing method thereof are provided to perform a process on a plastic substrate and to manufacture a thin film transistor at a low temperature process. A metal layer for a gate electrode is formed on a substrate(200) by a sputtering method. A gate electrode(204) is formed by patterning the metal layer through a photolithography process. A gate insulation layer(206) is formed on the gate electrode and the substrate. An amorphous chalcogenide layer is deposited on the gate insulation layer. A crystalline chalcogenide layer is formed by irradiating a laser on a top surface of the chalcogenide layer. A diffusion stop layer is deposited on the chalcogenide layer. A metal layer is formed on the diffusion stop layer. A contact hole is formed on a chalcogenide layer(220), a metal layer(216), and a gate insulation layer.
Abstract translation: 提供了制造N型和P型硫族化物材料的方法，硫族化物薄膜晶体管及其制造方法，以在塑料基板上进行处理，并在低温工艺下制造薄膜晶体管。 通过溅射法在基板（200）上形成用于栅电极的金属层。 通过光刻工艺对金属层进行图案化形成栅电极（204）。 在栅电极和衬底上形成栅极绝缘层（206）。 非晶态硫族化物层沉积在栅绝缘层上。 通过在硫族化物层的顶表面上照射激光来形成结晶硫族化物层。 扩散阻挡层沉积在硫族化物层上。 在扩散停止层上形成金属层。 在硫族化物层（220），金属层（216）和栅极绝缘层上形成接触孔。
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公开(公告)号：KR100889746B1
公开(公告)日：2009-03-24
申请号：KR1020070023588
申请日：2007-03-09
Applicant: 한국전자통신연구원
IPC: A61B6/00
CPC classification number: H01L27/14676 , G01T1/24 , H01L27/14632 , H01L27/14696 , H01L31/0272 , H01L31/0296 , H01L31/0749
Abstract: 본 발명은, 전통적인 필름 방식의 X-ray 판독기를 대체할 수 있도록, 칼코젠(chalcogen) 소재를 이용하여 X-ray 신호로부터 전기신호를 생성하고 저장할 수 있는 박막 트랜지스터 어레이를 이용한 전자의료 영상장치를 개시한다. 본 발명의 전자의료 영상장치는, 외부에서 조사되는 광 에너지를 흡수하여 전자(electron)-정공(hole) 쌍들이 형성되는 신호 생성부, 전자-정공 쌍들을 분리하고 그 극성에 따라 신호 생성부 내의 서로 반대 측에 밀집되도록, 신호 생성부의 일면에 접촉하여 전기 신호를 인가하는 전원, 신호 생성부에 접촉하며, 분리된 전하 중의 한 종류를 유입하여 저장하는 신호 저장부, 및 신호 저장부에 접촉하며, 신호 저장부에 제어신호를 인가하여 신호 저장부에 저장된 전하에 의한 전기 신호를 전달받아 영상신호로 변환하는 신호 변환부를 포함한다. 신호 생성부는 칼코젠 소재 중 하나인 비정질 셀레늄(amorphous selenium, a-Se)을 사용하거나 칼코젠을 이용한 화합물 소재인 CdTe 또는 CdZnTe를 사용할 수 있다. 또한, 신호 저장부는 GST를 포함하는 박막 트랜지스터 어레이, 혹은 CIS를 이용한 박막 트랜지스터 어레이를 포함하여 구성할 수 있다.
칼코젠(chalcogene), GST, CIS, 박막 트랜지스터, X-선, 영상장치-
公开(公告)号：KR100833517B1
公开(公告)日：2008-05-29
申请号：KR1020070043803
申请日：2007-05-04
Applicant: 한국전자통신연구원
IPC: H01B1/02
CPC classification number: C01B19/002 , C01P2002/72 , C01P2006/60
Abstract: A photoelectric material, a method for preparing the photoelectric material, and a photoelectric device containing the photoelectric material are provided to obtain excellent photoelectric effect without using rare indium or harmful cadmium. A photoelectric material is represented by AXYY', wherein A is an element of the group 11; X is an element of the group 15; and Y and Y' are identical or different each other and are an element of the group 16 in the periodic table. Preferably A is copper(Cu), X is arsenic(As), Y is sulfur(S), and Y' is selenium(Se). The photoelectric material is prepared by depositing a first material represented by X2Y3 on a substrate; depositing a second material represented by AY'2 on the first material; and heat treating the first material and the second material.
Abstract translation: 提供光电材料，光电材料的制备方法和含有光电材料的光电装置，以在不使用稀有铟或有害镉的情况下获得优异的光电效应。 光电材料由AXYY'表示，其中A是组11的元素; X是组15的元素; Y和Y'彼此相同或不同，并且是周期表中第16族的元素。 优选A是铜（Cu），X是砷（As），Y是硫（S），Y'是硒（Se）。 通过将由X2Y3表示的第一材料沉积在基板上来制备光电材料; 将由AY'2表示的第二材料沉积在第一材料上; 并对第一材料和第二材料进行热处理。
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公开(公告)号：KR1020080047189A
公开(公告)日：2008-05-28
申请号：KR1020060117220
申请日：2006-11-24
Applicant: 한국전자통신연구원
IPC: H01L27/146
CPC classification number: H01L31/153 , H01L31/08 , H01L31/102 , H01L31/113 , H01L33/0008
Abstract: A contact image sensor is provided to reduce the size of an image sensor without an additional backlight by making a plurality of image pixels generate light by themselves. A plurality of image pixels are arranged as a two-dimensional array type to obtain a two-dimensional image of an object, including a light generating part(20) for generating light and a light detecting part that generate photoelectric current and photoelectric voltage in response to the incident light reflected from the object. The light generating part can include a substrate, a first transparent electrode(21) formed on the substrate, a first semiconductor thin film(22) of a first conductivity type and a second semiconductor thin film(23) of a second conductivity that are formed on the first transparent electrode, and a light emitting diode formed on the second semiconductor thin film. A voltage is applied to the first transparent electrode. The first and second semiconductor thin films generate light when a difference between the photoelectric voltage and a relative voltage is not less than a threshold voltage. The light emitting diode includes a first upper electrode(24) to which the relative voltage is applied.
Abstract translation: 提供接触图像传感器，以通过使多个图像像素自身产生光来减小图像传感器的尺寸，而不需要额外的背光。 将多个图像像素布置为二维阵列类型以获得物体的二维图像，包括用于产生光的光产生部分（20）和产生光电流的光检测部分和响应中的光电压 对物体反射的入射光。 光产生部分可以包括基板，形成在基板上的第一透明电极（21），形成第一导电类型的第一半导体薄膜（22）和形成第二导电类型的第二半导体薄膜（23） 在第一透明电极上，以及形成在第二半导体薄膜上的发光二极管。 向第一透明电极施加电压。 当光电压和相对电压之间的差不小于阈值电压时，第一和第二半导体薄膜产生光。 发光二极管包括施加相对电压的第一上电极（24）。
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公开(公告)号：KR100779085B1
公开(公告)日：2007-11-27
申请号：KR1020060054904
申请日：2006-06-19
Applicant: 한국전자통신연구원
Abstract: 본 발명은 전자기 액츄에이터를 이용한 펌프를 개시한다.
본 발명에 의하면, 구조가 간단하면서 소형으로 구현하는 것이 가능하며, 코일에 흐르는 전류를 위한 에너지 외에는 별도의 에너지가 필요없어서 에너지 소비가 적은 유체 수송용 미니 펌프에 사용될 수 있게 되며, 그 결과 비교적 작은 전압에 의해 큰 구동 거리를 가지며 높은 에너지 밀도를 얻을 수 있고 비교적 빠른 응답 속도를 가지는 초소형의 펌프를 제작할 수 있는 기술적인 기반을 제공한다.-
Patent Agency Ranking
公开(公告)号：KR1020070013980A
公开(公告)日：2007-01-31
申请号：KR1020050108943
申请日：2005-11-15
Applicant: 한국전자통신연구원
IPC: H01L29/786
CPC classification number: H01L29/66765 , H01L27/1266 , H01L29/66757 , H01L29/78675 , H01L29/78678
Abstract: A crystallization method is provided to form a large grain by delaying a crystallization speed of amorphous silicon using a unit pulse layer. A predetermined layer structure is formed on a substrate(100). The predetermined layer structure is composed of a first amorphous silicon layer(300), an insulating layer(400) and a second amorphous silicon layer(500). A crystallization process is performed on the second amorphous silicon layer by irradiating a laser beam on the predetermined layer structure. The insulating layer is made of a silicon oxide layer. The laser beam is a unit pulse layer beam. A metal film made of a tungsten alloy is capable of being interposed between the substrate and the first amorphous silicon layer.
Abstract translation: 提供了通过使用单位脉冲层延迟非晶硅的结晶速度来形成大晶粒的结晶方法。 在基板（100）上形成预定的层结构。 预定层结构由第一非晶硅层（300），绝缘层（400）和第二非晶硅层（500）组成。 通过在预定层结构上照射激光来对第二非晶硅层进行结晶处理。 绝缘层由氧化硅层制成。 激光束是单位脉冲层束。 由钨合金制成的金属膜能够插入在基板和第一非晶硅层之间。
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公开(公告)号：KR100656364B1
公开(公告)日：2006-12-13
申请号：KR1020050108945
申请日：2005-11-15
Applicant: 한국전자통신연구원
Abstract: A sealing material for an electronic tag is provided to facilitate protection of personal information recorded in the electronic tag while implementing the sealing material at a low cost by using a photochromic material. The surface contains the photochromic material or a polymer material coated by the photochromic material. A chip and an antenna for recording and inputting/outputting the information are attached to the electronic tag. Another surface contains metal for shielding the electronic tag from electromagnetic wave or the polymer material coated by the metal. The electromagnetic wave is variably shield by photochromic reaction property of the photochromic material. The photochromic material is realized by using one of TiO2 or SiO2 compounds, or the material mixing both compounds as a base material, and doping ionic metal to the base material. The ionic metal is one or two selected from Au, Ag, Cu, Fe, Cr, Ni, Co, or W.
Abstract translation: 提供一种用于电子标签的密封材料，以便于通过使用光致变色材料以低成本实现密封材料，同时保护记录在电子标签中的个人信息。 表面含有光致变色材料或由光致变色材料涂覆的聚合物材料。 用于记录和输入/输出信息的芯片和天线被附加到电子标签。 另一个表面包含用于屏蔽电子标签免受电磁波或用金属涂覆的聚合物材料的金属。 电磁波通过光致变色材料的光致变色反应性而被可变地屏蔽。 该光致变色材料通过使用TiO 2或SiO 2化合物中的一种或混合两种化合物的材料作为基础材料并将离子金属掺杂到基础材料来实现。 离子金属是选自Au，Ag，Cu，Fe，Cr，Ni，Co或W中的一种或两种。
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公开(公告)号：KR1020040035497A
公开(公告)日：2004-04-29
申请号：KR1020020064662
申请日：2002-10-22
Applicant: 한국전자통신연구원
IPC: G11B11/26
CPC classification number: G11B7/1387 , G01Q60/22 , G01Q80/00 , G11B7/22 , H01L21/30608 , H01L21/31116
Abstract: PURPOSE: A structure for a cantilever typed near field probe applicable to a head of an optical information storing device and a manufacturing method thereof are provided to maximally shorten an optical loss region on the head of the optical information storing device and improve an optical throughput needed for recording/playing the optical information more than a few thousands times of a current optical fiber probe. CONSTITUTION: A hole(11) penetrating an upper/lower part of a body is formed on a silicon substrate(10). A dielectrics thin film(20) is formed to a bottom of the silicon substrate as a mask layer. As an oxide film(40) is deposited to the upper part of the silicon substrate as the probe of a parabolic curve, an aperture(41) leading to the penetrating hole of the silicon substrate is formed on a vertex of the oxide film. As depositing on the oxide film, a near field aperture(71) leading to the aperture of the oxide film and having a high throughout is formed on a metal thin film(70).
Abstract translation: 目的：提供适用于光信息存储装置的头部的用于悬臂式近场探头的结构及其制造方法，以最大限度地缩短光信息存储装置的头部上的光损耗区域，并提高所需光学吞吐量 用于记录/播放光学信息超过数千倍的当前光纤探针。 构成：在硅衬底（10）上形成穿透体的上/下部的孔（11）。 在硅衬底的底部形成电介质薄膜（20）作为掩模层。 由于作为抛物线曲线的探针将氧化膜（40）沉积到硅衬底的上部，所以在氧化膜的顶点上形成通向硅衬底的穿透孔的孔（41）。 当沉积在氧化物膜上时，在金属薄膜（70）上形成通向氧化膜的孔并且具有高整体的近场孔（71）。
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公开(公告)号：KR1020140137574A
公开(公告)日：2014-12-03
申请号：KR1020130058230
申请日：2013-05-23
Applicant: 한국전자통신연구원
CPC classification number: C01B32/192 , C01B32/23 , B82B3/0009
Abstract: 생체물질의 정전 자기조립 성질을 이용하여 화학물질 사용 및 열처리 공정을 최소화하며, 쉽고 빠르고 친환경적으로 그래핀 또는 그래핀 산화물/나노입자 복합 물질을 제조하는 방법 및 이에 의해 제조된 그래핀/나노입자 복합 물질을 제시한다. 제시된 방법은 나노입자와 생체물질 용액 및 그래핀 산화물 용액을 준비하는 단계, 나노입자와 생체물질 용액을 혼합하여 생체물질이 코팅된 나노입자를 형성하는 단계, 생체물질이 코팅된 나노입자와 그래핀 산화물 용액을 혼합하여 그래핀 산화물/나노입자 복합물질을 제조하는 단계, 및 그래핀 산화물/나노입자 복합물질을 환원하여 그래핀/나노입자 복합물질을 제조하는 단계를 포함한다.
Abstract translation: 提供：一种容易，快速和环境友好地制造石墨烯或氧化石墨烯/纳米颗粒混合材料的方法，其使用生物体的静电自组装性将化学用途和热处理过程最小化; 和由此制造的石墨烯/纳米颗粒混合材料。 所提供的方法包括以下步骤：制备纳米颗粒，生物体溶液和氧化石墨烯溶液; 通过将纳米颗粒与生物物质溶液混合而形成纳米颗粒，在其上涂覆生物物质; 通过将其上涂覆有生物物质的纳米颗粒与氧化石墨烯溶液混合来制造氧化石墨烯/纳米颗粒混合材料; 并通过还原氧化石墨烯/纳米颗粒混合物来制造石墨烯/纳米颗粒混合物。
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公开(公告)号：KR1020140083536A
公开(公告)日：2014-07-04
申请号：KR1020120153424
申请日：2012-12-26
Applicant: 한국전자통신연구원
CPC classification number: G01N27/745 , B82Y25/00 , G01N33/54326 , G01N33/54366 , H01F41/309 , G01N27/72
Abstract: The present invention provides an analyzing device and an analyzing method using the same. According to the analyzing method, a giant magnetoresistance sensor unit is formed to have a size of one cancer cell or smaller; and a magnetoresistance based on the number of particles of magnetic nanoparticles bound on one cancer cell, is measured by using the giant magnetoresistance sensor unit, and thus, not only diagnosis of cancer but also identification of a cancer type can be performed in an easy and inexpensive manner.
Abstract translation: 本发明提供一种分析装置及其分析方法。 根据分析方法，形成巨大的磁阻传感器单元，其尺寸为一个以上的癌细胞; 并且通过使用巨磁电阻传感器单元测量基于结合在一个癌细胞上的磁性纳米颗粒的数量的磁阻，因此，不仅可以在易于和简单的方法中进行癌症的诊断，而且可以进行癌症型的鉴别 廉价的方式。
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