公开(公告)号：KR1020040035497A

公开(公告)日：2004-04-29

申请号：KR1020020064662

申请日：2002-10-22

Applicant: 한국전자통신연구원

Inventor： 송기봉 ,  김은경 ,  이성규 ,  박강호 ,  김준호

IPC: G11B11/26

CPC classification number: G11B7/1387 ,  G01Q60/22 ,  G01Q80/00 ,  G11B7/22 ,  H01L21/30608 ,  H01L21/31116

Abstract: PURPOSE: A structure for a cantilever typed near field probe applicable to a head of an optical information storing device and a manufacturing method thereof are provided to maximally shorten an optical loss region on the head of the optical information storing device and improve an optical throughput needed for recording/playing the optical information more than a few thousands times of a current optical fiber probe. CONSTITUTION: A hole(11) penetrating an upper/lower part of a body is formed on a silicon substrate(10). A dielectrics thin film(20) is formed to a bottom of the silicon substrate as a mask layer. As an oxide film(40) is deposited to the upper part of the silicon substrate as the probe of a parabolic curve, an aperture(41) leading to the penetrating hole of the silicon substrate is formed on a vertex of the oxide film. As depositing on the oxide film, a near field aperture(71) leading to the aperture of the oxide film and having a high throughout is formed on a metal thin film(70).

Abstract translation: 目的：提供适用于光信息存储装置的头部的用于悬臂式近场探头的结构及其制造方法，以最大限度地缩短光信息存储装置的头部上的光损耗区域，并提高所需光学吞吐量 用于记录/播放光学信息超过数千倍的当前光纤探针。 构成：在硅衬底（10）上形成穿透体的上/下部的孔（11）。 在硅衬底的底部形成电介质薄膜（20）作为掩模层。 由于作为抛物线曲线的探针将氧化膜（40）沉积到硅衬底的上部，所以在氧化膜的顶点上形成通向硅衬底的穿透孔的孔（41）。 当沉积在氧化物膜上时，在金属薄膜（70）上形成通向氧化膜的孔并且具有高整体的近场孔（71）。

公开(公告)号：KR100400080B1

公开(公告)日：2003-09-29

申请号：KR1020010057569

申请日：2001-09-18

Applicant: 한국전자통신연구원

Inventor： 김준호 ,  김상협 ,  성건용

IPC: H01L39/22

Abstract: PURPOSE: Josephson junction including a superconducting MgB2 thin film is provided to not only have such a uniform junction so as to be applied in an integrated circuit but also be used to make a circuit with a common refrigerator under low temperature ranging 15 to 20 K. CONSTITUTION: A bottom superconductor thin film(12) made up of MgB2 is formed on a substrate(10). A metal barrier layer(20a) is formed on the bottom superconductor thin film. A top superconductor thin film(22a) is formed on the metal barrier layer. The first capping layer is formed on the superconductor thin film to prevent diffusion of Mg. After exposing the product in the air, the first capping layer, A top superconductor thin film and barrier layer are patterned in sequence. The second capping layer(32) is formed to isolate the bottom superconductor thin film from the top superconductor thin film electrically. After patterning the first capping layer again so as to expose the top superconductor thin film, electric pads(40) and wires(42) are formed on the exposed surface of it.

Abstract translation: 目的：提供包含超导MgB2薄膜的约瑟夫逊结，不仅具有这样的均匀结以便应用于集成电路中，而且还可用于在15至20K的低温下制造具有普通冰箱的电路。 构成：在衬底（10）上形成由MgB 2构成的底部超导体薄膜（12）。 金属阻挡层（20a）形成在底部超导体薄膜上。 顶部超导体薄膜（22a）形成在金属阻挡层上。 第一覆盖层形成在超导体薄膜上以防止Mg扩散。 在空气中暴露产品之后，依次图案化第一覆盖层，顶部超导体薄膜和阻挡层。 第二覆盖层（32）形成为将底部超导体薄膜与顶部超导体薄膜电隔离。 在再次图案化第一覆盖层以暴露顶部超导体薄膜之后，在其暴露表面上形成电焊盘（40）和导线（42）。

公开(公告)号：KR1020030023166A

公开(公告)日：2003-03-19

申请号：KR1020010056188

申请日：2001-09-12

Applicant: 한국전자통신연구원

Inventor： 김준호 ,  성건용 ,  김상협

IPC: H01L21/3065

Abstract: PURPOSE: An apparatus for driving a sample holder of semiconductor fabrication equipment and an etching method using the same are provided to form smoothly an incline boundary by controlling an incident angle of ion beam and a revolution speed of a sample. CONSTITUTION: A gear teeth(11) is formed on a sample holder(10). A rotation driving portion is connected with the gear tooth(11) of the sample holder(10). A slope driving portion(30) is used for shifting the sample holder(10) as much as a predetermined angle. The rotation driving portion includes a motor(21), a gear portion(22), a driving shaft(23), the first bevel gear(24), the second bevel gear(25), and the third bevel gear(27). The slope driving portion(30) is formed with a rotary handle bar(31), a worm(33) installed at a rotary shaft(32), a horizontal gear(34), and a fixing member(36). A supply line(40) is connected with a cooling line(41) of a vacuum chamber. A flange(42) is adhered on the vacuum chamber.

Abstract translation: 目的：提供一种用于驱动半导体制造设备的样品架的设备和使用其的蚀刻方法，以通过控制离子束的入射角和样品的转速来平滑地形成倾斜边界。 构成：齿轮齿（11）形成在样品架（10）上。 旋转驱动部与样品保持架（10）的齿轮齿（11）连接。 倾斜驱动部（30）用于将样品架（10）移动多达预定角度。 旋转驱动部分包括马达（21），齿轮部分（22），驱动轴（23），第一锥齿轮（24），第二锥齿轮（25）和第三锥齿轮（27）。 斜面驱动部30形成有旋转手柄31，安装在旋转轴32上的蜗杆33，水平齿轮34和固定部36。 供应管线（40）与真空室的冷却管线（41）连接。 凸缘（42）粘附在真空室上。