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公开(公告)号：KR101779059B1
公开(公告)日：2017-09-19
申请号：KR1020120140368
申请日：2012-12-05
Applicant: 한국전자통신연구원
IPC: H01L31/0232 , H01L31/054 , H01L31/0224 , H01L31/103
CPC classification number: H01L31/02327 , H01L31/022466 , H01L31/103
Abstract: 실시예에따른광전변환소자는광의흡수가용이하도록, 실시예는제1 기판, 상기제1 기판의상부에배치된광전변환층, 상기제1 기판과다르며상기광전변환층상에배치된제2 기판및 상기제2 기판의상부에배치된나노기둥층을포함하고, 상기나노기둥층은, 서로이격된복수의나노기둥을포함하는광전변환소자를제공한다.
Abstract translation: 根据本实施例的光电转换装置是方便的光的吸收，设置在所述第一基板上的第二基板的实例中，所述光电转换层的顶部，所述光电转换层是由设置在所述第一基板上的第一基板不同 和上部层包括纳米柱，其特征在于，设置在第二基板上的纳米柱层，提供了一种光电器件，其包括多个彼此间隔开的纳米柱。
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公开(公告)号：KR1020170102705A
公开(公告)日：2017-09-12
申请号：KR1020160025174
申请日：2016-03-02
Applicant: 한국전자통신연구원
Inventor： 김상협
IPC: A61B5/04
Abstract: 디스크형상의몸체부, 및상기몸체부의상면으로부터돌출된돌출부들을포함하는생체전극을제공하되, 상기돌출부들은상기몸체부의가장자리를따라환형으로배열되고, 상기돌출부들의상단은상기몸체부로부터멀어지는방향으로볼록한형상을가질수 있다.
Abstract translation: 但它提供了一种包括从盘形的主体部分，主体部分的上表面突出的突出部的生物电极，所述凸起是环状沿着主体部分的边缘从所述突出部分的身体的所述部分布置在一个方向上端远离 它可以有一个凸形状。
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公开(公告)号：KR1020150080982A
公开(公告)日：2015-07-13
申请号：KR1020140000379
申请日：2014-01-02
Applicant: 한국전자통신연구원
CPC classification number: Y02P70/521 , H01L31/18 , H01L31/09
Abstract: 본발명은다중반사막을이용한고효율실리콘나노결정광 검출기소자및 그의제조방법에관한것으로, 본발명에따른광 검출기소자는부 및상부캐리어운반층들사이에개재된광전변환층; 상기상부캐리어운반층상에배치된투명전도성박막; 및상기투명전도성박막상에다중반사막층을포함하되, 상기다중반사막층은실리콘나노결정을포함한실리콘질화물로형성되고, 이들각각의층은다른굴절율및 다른나노결정크기를갖는것을특징으로한다. 이와같은다중반사막을갖는나노결정광 검출기소자는광감지기내부의광전변환층으로입사되는광의흡수가증가되어광감지기의광전변환효율을향상시킬수 있다.
Abstract translation: 本发明涉及使用多反射膜的高效硅纳米晶体光电探测元件及其制造方法。 本发明的光检测器元件包括：插入在下载体传输层和上载波传输层之间的光电转换层; 设置在上载体传输层上的透明导电薄膜; 形成在透明导电薄膜上的多反射层，其中多反射层包含含有硅纳米晶体的氮化硅，并且每个层具有不同的折射率和不同的纳米晶体尺寸。 具有这种多反射膜的纳米晶体光检测器元件由于入射到光电检测器内部的光电转换层上的光吸收增加而能够提高光电检测器的光电转换效率。
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公开(公告)号：KR1020130065276A
公开(公告)日：2013-06-19
申请号：KR1020110132065
申请日：2011-12-09
Applicant: 한국전자통신연구원
CPC classification number: C01G39/06 , B82Y40/00 , C01P2004/64
Abstract: PURPOSE: A manufacturing method of a molybdenum disulfide nanostructure is provided to easily grow the monolayer of molybdenum disulfide using a catalytic substrate and a protective layer. CONSTITUTION: A manufacturing method of a molybdenum disulfide nanostructure includes the following steps of: forming a molybdenum disulfide nanostructure(20) on a catalytic substrate; annealing the molybdenum disulfide nanostructure; forming a protective layer(30) on the molybdenum disulfide nanostructure; and removing the catalytic substrate. The molybdenum disulfide nanostructure with the protective layer is transferred on a target substrate. The protective layer is removed. The molybdenum disulfide nanostructure is the monolayer of molybdenum disulfide. The catalytic substrate is one or the mixture of Ni, Cu, Fe, and Co. The protective layer is one of poly(methyl methacrylate)(PMMA), photoresist(PR), and electron resist(ER).
Abstract translation: 目的：提供二硫化钼纳米结构的制造方法，使用催化底物和保护层容易地生长二硫化钼单层。 构成：二硫化钼纳米结构的制造方法包括以下步骤：在催化底物上形成二硫化钼纳米结构（20）; 退火二硫化钼纳米结构; 在二硫化钼纳米结构上形成保护层（30）; 并除去催化底物。 具有保护层的二硫化钼纳米结构转移到目标衬底上。 保护层被去除。 二硫化钼纳米结构是二硫化钼单层。 催化底物是一种或Ni，Cu，Fe和Co的混合物。保护层是聚（甲基丙烯酸甲酯）（PMMA），光致抗蚀剂（PR）和电子抗蚀剂（ER）之一。
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公开(公告)号：KR101129364B1
公开(公告)日：2012-03-26
申请号：KR1020080125473
申请日：2008-12-10
Applicant: 한국전자통신연구원
CPC classification number: A61N1/0529 , A61N1/0551
Abstract: 본 발명은 제 1 홀 및 제 2 홀을 포함하는 유리섬유; 및 상기 제 1 홀 내에 위치하는 금속선을 포함하는 것을 특징으로 하는 뇌신경 자극용 전극 및 이를 포함하는 기판에 관한 것이다.
유리섬유, 전극, 뇌신경-
Patent Agency Ranking
公开(公告)号：KR1020120007861A
公开(公告)日：2012-01-25
申请号：KR1020100068626
申请日：2010-07-15
Applicant: 한국전자통신연구원
IPC: H01L31/054
CPC classification number: Y02E10/50 , H01L31/054
Abstract: PURPOSE: A photovoltaic device is provided to maximize the efficiency of a photo voltaic device by minimizing the recombination of an electron-a hole which is generated with condensed light. CONSTITUTION: A photoelectric conversion layer(125) includes a P-type semiconductor layer and an N-type semiconductor layer A front electrode exposes a part of the photoelectric conversion layer. A condensing lens(150) covers the photoelectric conversion layer which the front electrode exposes. A protective layer(160) covers condensing lenses. The photoelectric conversion layer includes the first area exposing with the front electrode and the second area covered with the front electrode.
Abstract translation: 目的：提供一种光电器件，通过最小化由浓缩光产生的电子 - 一个孔的复合来最大化光伏器件的效率。 构成：光电转换层（125）包括P型半导体层和N型半导体层A前电极暴露光电转换层的一部分。 聚光透镜（150）覆盖前电极暴露的光电转换层。 保护层（160）覆盖聚光透镜。 光电转换层包括用前电极曝光的第一区域和被前电极覆盖的第二区域。
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公开(公告)号：KR1020120003625A
公开(公告)日：2012-01-11
申请号：KR1020100064334
申请日：2010-07-05
Applicant: 한국전자통신연구원
CPC classification number: H04R1/1016 , H04R3/12 , H04R2460/11
Abstract: PURPOSE: An earphone for blind people is provided to support the sight of the blind people by including two and more speakers which output a sound of different size according to the pointing direction of a guide sound. CONSTITUTION: An earphone for blind people is divided into a head part(110) and a body part(120). A sound hole(112) is formed in the head part and the body part. The body part comprises a circuit part(122) and 4 speakers. The sound hole transfers a nature sound from outside to the ear of a user. The circuit part amplifies an electric signal which is received from a voice guiding system. The circuit part controls the level of a sound which is outputted through the 4 speakers. The circuit part outputs the electric signal to a sound of different size according to the pointing direction of a guide sound through the 4 speakers.
Abstract translation: 目的：提供盲人耳机，通过包括两个或更多个扬声器来支持盲人的视线，这些扬声器根据导向声的指向方向输出不同大小的声音。 构成：用于盲人的耳机被分成头部（110）和身体部分（120）。 在头部和身体部分中形成声孔（112）。 身体部分包括电路部分（122）和4个扬声器。 声孔从用户的外部向耳朵传送自然声音。 电路部分放大从语音引导系统接收的电信号。 电路部分控制通过4个扬声器输出的声音的电平。 电路部分根据引导声通过4个扬声器的指向方向将电信号输出到不同大小的声音。
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公开(公告)号：KR1020080103824A
公开(公告)日：2008-11-28
申请号：KR1020070051050
申请日：2007-05-25
Applicant: 한국전자통신연구원
IPC: H01L21/027 , B82Y40/00
CPC classification number: H01L21/0275 , B82Y40/00 , G03F7/202 , G03F7/2059
Abstract: A gold pattern formation method using the gold electron-beam resist is provided to form the gold pattern of nano scale using the electron beam writer. A gold pattern formation method using the gold electron-beam resist includes the step for synthesizing the gold electron-beam resist(200); the step for forming the gold electron beam resist film by coating the synthesized gold electron-beam resist on the top of the substrate(220); the step for forming the gold electron beam resist pattern by patterning the gold electron beam resist film using the electron beam writer(260); the step for changing the gold pattern into the gold electron beam resist pattern by applying the thermal treatment to the gold electron beam resist pattern.
Abstract translation: 提供使用金电子束抗蚀剂的金图案形成方法，以使用电子束写入器形成纳米尺度的金图案。 使用金电子束抗蚀剂的金图案形成方法包括合成金电子束抗蚀剂（200）的步骤。 通过在基板（220）的顶部涂覆合成的金电子束抗蚀剂来形成金电子束抗蚀剂膜的步骤; 通过使用电子束写入器（260）图案化金电子束抗蚀剂膜来形成金电子束抗蚀剂图案的步骤; 通过对金电子束抗蚀剂图案进行热处理来将金图案改变为金电子束抗蚀剂图案的步骤。
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公开(公告)号：KR100825765B1
公开(公告)日：2008-04-29
申请号：KR1020070036582
申请日：2007-04-13
Applicant: 한국전자통신연구원
CPC classification number: C01G23/047 , B82Y30/00 , C01G9/02 , C01G17/02 , C01G23/053 , C01G25/02 , C01G28/02 , C01G31/02 , C01G33/00 , C01G37/02 , C01P2004/64 , C23C18/1216 , C23C18/1245 , C23C18/1254 , C23C18/1295
Abstract: A method for manufacturing oxide-based nano structures is provided to form nano structures having a uniform composition reproducibly in a relatively low cost. A method for manufacturing oxide-based nano structures includes the steps of: (10) coating the surface of a substrate with a mixture solution in which an organic material precursor comprising M(wherein, M is a transition metal or semimetal element) is dissolved in an organic solvent; (20) heat-treating the mixture solution-coated substrate to form nano nuclei having a composition of MxOy(wherein, x is an integer of 1-3 and y is an integer of 1-6) on the substrate; (30) growing the nano nuclei to form nano structures having a composition of MxOy while supplying the M-containing reaction precursor to the nano nuclei; and (40) heat-treating the nano structures. Further, the M is one transition metal selected from a group consisting of Ti, V, Cr, Zn, Y, Zr and Nb.
Abstract translation: 提供一种制造基于氧化物的纳米结构体的方法，以相当低的成本形成具有均匀组成的纳米结构。 一种制造基于氧化物的纳米结构体的方法包括以下步骤：（10）用其中溶解有M（其中，M是过渡金属或半金属元素）的有机材料前体溶解在其中的混合溶液涂覆基材表面 有机溶剂; （20）对所述混合溶液涂布的基材进行热处理，以在所述基材上形成组成为M x O y的纳米核（其中，x为1-3的整数，y为1-6的整数）; （30）生长纳米核以形成具有MxOy组成的纳米结构，同时向纳米核提供含M反应前体; 和（40）对纳米结构进行热处理。 此外，M是选自由Ti，V，Cr，Zn，Y，Zr和Nb组成的组中的一种过渡金属。
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公开(公告)号：KR100400080B1
公开(公告)日：2003-09-29
申请号：KR1020010057569
申请日：2001-09-18
Applicant: 한국전자통신연구원
IPC: H01L39/22
Abstract: PURPOSE: Josephson junction including a superconducting MgB2 thin film is provided to not only have such a uniform junction so as to be applied in an integrated circuit but also be used to make a circuit with a common refrigerator under low temperature ranging 15 to 20 K. CONSTITUTION: A bottom superconductor thin film(12) made up of MgB2 is formed on a substrate(10). A metal barrier layer(20a) is formed on the bottom superconductor thin film. A top superconductor thin film(22a) is formed on the metal barrier layer. The first capping layer is formed on the superconductor thin film to prevent diffusion of Mg. After exposing the product in the air, the first capping layer, A top superconductor thin film and barrier layer are patterned in sequence. The second capping layer(32) is formed to isolate the bottom superconductor thin film from the top superconductor thin film electrically. After patterning the first capping layer again so as to expose the top superconductor thin film, electric pads(40) and wires(42) are formed on the exposed surface of it.
Abstract translation: 目的：提供包含超导MgB2薄膜的约瑟夫逊结，不仅具有这样的均匀结以便应用于集成电路中，而且还可用于在15至20K的低温下制造具有普通冰箱的电路。 构成：在衬底（10）上形成由MgB 2构成的底部超导体薄膜（12）。 金属阻挡层（20a）形成在底部超导体薄膜上。 顶部超导体薄膜（22a）形成在金属阻挡层上。 第一覆盖层形成在超导体薄膜上以防止Mg扩散。 在空气中暴露产品之后，依次图案化第一覆盖层，顶部超导体薄膜和阻挡层。 第二覆盖层（32）形成为将底部超导体薄膜与顶部超导体薄膜电隔离。 在再次图案化第一覆盖层以暴露顶部超导体薄膜之后，在其暴露表面上形成电焊盘（40）和导线（42）。
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