公开(公告)号：US12134108B2

公开(公告)日：2024-11-05

申请号：US18300748

申请日：2023-04-14

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: C23C16/455 ,  B05D1/00 ,  H10K71/16

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

公开(公告)号：US11643726B2

公开(公告)日：2023-05-09

申请号：US17580832

申请日：2022-01-21

Applicant: ASM IP Holding B.V.

Inventor： Marko Tuominen ,  Viljami Pore

IPC: C23C16/458 ,  C23C16/509 ,  C23C16/517 ,  C23C16/56 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/4586 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/517 ,  C23C16/52 ,  C23C16/56

Abstract: Methods for depositing materials are described. The methods comprise maintaining a substrate support at a substrate support temperature which is lower than a precursor source temperature. The methods further comprise condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.

公开(公告)号：US20230098114A1

公开(公告)日：2023-03-30

申请号：US17936607

申请日：2022-09-29

Applicant: ASM IP Holding, B.V.

Inventor： Eva Tois ,  Daniele Chiappe ,  Marko Tuominen ,  Viraj Madhiwala ,  Charles Dezelah ,  YongGyu Han ,  Anirudhan Chandrasekaran ,  Shaoren Deng

IPC: H01L21/02

Abstract: The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.

公开(公告)号：US20220388031A1

公开(公告)日：2022-12-08

申请号：US17820180

申请日：2022-08-16

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: B05D1/00 ,  H01L51/00 ,  C23C16/455

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

公开(公告)号：US20220323991A1

公开(公告)日：2022-10-13

申请号：US17808384

申请日：2022-06-23

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: B05D1/00 ,  H01L21/02 ,  C23C16/30 ,  B05D1/36 ,  C23C16/455 ,  H01L21/67

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

公开(公告)号：US20220181163A1

公开(公告)日：2022-06-09

申请号：US17457764

申请日：2021-12-06

Applicant: ASM IP HOLDING B.V.

Inventor： Andrea Illiberi ,  Varun Sharma ,  Michael Givens ,  Marko Tuominen ,  Shaoren Deng

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/46 ,  C23C16/56

Abstract: The current disclosure generally relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to methods of depositing a layer on a substrate comprising a recess. The method comprises providing the substrate comprising a recess in a reaction chamber, depositing inhibition material on the substrate to fill the recess with inhibition material, removing the inhibition material from the substrate for exposing a deposition area and depositing a layer on the deposition area by a vapor deposition process. A vapor deposition assembly for performing the method is also disclosed.

公开(公告)号：US11230770B2

公开(公告)日：2022-01-25

申请号：US16881885

申请日：2020-05-22

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US10695794B2

公开(公告)日：2020-06-30

申请号：US14879962

申请日：2015-10-09

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: C23C16/455 ,  H01L51/00 ,  B05D1/00

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

公开(公告)号：US10456808B2

公开(公告)日：2019-10-29

申请号：US15877632

申请日：2018-01-23

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: C23C16/40 ,  B05D3/10 ,  C23C18/06 ,  C23C18/12 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

公开(公告)号：US10443123B2

公开(公告)日：2019-10-15

申请号：US16100855

申请日：2018-08-10

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/06 ,  C23C16/40 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C16/18 ,  C23C16/22 ,  H01L21/285 ,  H01L21/768

Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.