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公开(公告)号：US10137643B2
公开(公告)日：2018-11-27
申请号：US14456586
申请日：2014-08-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Yu Cao , Wenjin Shao , Ronaldus Johannes Gijsbertus Goossens , Jun Ye , James Patrick Koonmen
Abstract: Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.
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公开(公告)号：US09921485B2
公开(公告)日：2018-03-20
申请号：US14880018
申请日：2015-10-09
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20
CPC classification number: G03F7/705 , G03F7/70125 , G03F7/70458 , G03F7/70516 , G03F7/70525
Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.
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公开(公告)号：US20150135146A1
公开(公告)日：2015-05-14
申请号：US14600337
申请日：2015-01-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
IPC: G06F17/50
CPC classification number: G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009
Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
Abstract translation: 本发明的三维掩模模型提供了比薄膜模型具有亚波长特征的光刻掩模的三维效果更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。
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公开(公告)号：US20150074622A1
公开(公告)日：2015-03-12
申请号：US14543498
申请日：2014-11-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Hanying Feng , Yu Cao , Jun Ye
IPC: G06F17/50
CPC classification number: G06F17/5068 , G03F1/70 , G03F7/70125 , G03F7/70258 , G03F7/70441 , G03F7/705 , G06F17/5009 , G06F2217/06 , G06F2217/08 , G06F2217/10 , G06F2217/12
Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein, and preferably including optimizing a source, a mask, and the projection optics. The projection optics is sometimes broadly referred to as “lens”, and therefore the joint optimization process may be termed source mask lens optimization (SMLO). SMLO is desirable over existing source mask optimization process (SMO), partially because including the projection optics in the optimization can lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics can be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process. According to the embodiments herein, the optimization can be accelerated by iteratively using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).
Abstract translation: 本发明的实施例提供了优化包括优化其中的投影光学元件的光刻投影设备的方法，并且优选地包括优化源，掩模和投影光学元件。 投影光学器件有时被广泛地称为“透镜”，因此联合优化过程可以被称为源掩模透镜优化（SMLO）。 SMLO对于现有的源掩码优化处理（SMO）是期望的，部分原因在于，通过引入投影光学器件的多个可调特性，优化中的投影光学器件可以导致更大的处理窗口。 投影光学元件可用于在光刻投影设备中形成波前，从而实现整个成像过程的像差控制。 根据本文的实施例，可以通过迭代地使用线性拟合算法或者使用使用传输交叉系数（TCC）的偏导数的泰勒级数扩展来加速优化。
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25.发明申请PATTERN-INDEPENDENT AND HYBRID MATCHING/TUNING INCLUDING LIGHT MANIPULATION BY PROJECTION OPTICS 有权模式独立和混合匹配/调谐，包括通过投影光学的光控制公开(公告)号：US20140282303A1
公开(公告)日：2014-09-18
申请号：US14294745
申请日：2014-06-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Hanying FENG , Yu Cao , Jun Ye
IPC: G06F17/50
CPC classification number: G06F17/50 , G02B19/0014 , G02B19/0028 , G02B19/0095 , G03F7/705
Abstract: Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing illumination source and projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).
Abstract translation: 这里描述了将光刻投影设备的特性与参考光刻投影设备进行匹配的方法，其中匹配包括优化照明源和投影光学特性。 投影光学元件可用于在光刻投影装置中形成波前。 根据本文的实施例，可以通过使用线性拟合算法或使用使用传输交叉系数（TCC）的偏导数的泰勒级数扩展来加速该方法。
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Patent Agency Ranking
公开(公告)号：US10423075B2
公开(公告)日：2019-09-24
申请号：US14575609
申请日：2014-12-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Hanying Feng , Yu Cao , Jun Ye , Youping Zhang
Abstract: The present invention relates to methods and systems for designing gauge patterns that are extremely sensitive to parameter variation, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variation. The method may also include designing gauges which have more than one test patterns, such that a combined response of the gauge can be tailored to generate a certain response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variation leads to robust performance against random measurement error and/or any other measurement error.
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公开(公告)号：US09746784B2
公开(公告)日：2017-08-29
申请号：US14064937
申请日：2013-10-28
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F7/70441 , G03F7/70266 , G03F7/705 , G03F7/70533 , G03F7/706 , G03F7/70891 , G06F17/50
Abstract: Methods for calibrating a photolithographic system are disclosed. A cold lens contour for a reticle design and at least one hot lens contour for the reticle design are generated from which a process window is defined. Aberrations induced by a lens manipulator are characterized in a manipulator model and the process window is optimized using the manipulator model. Aberrations are characterized by identifying variations in critical dimensions caused by lens manipulation for a plurality of manipulator settings and by modeling behavior of the manipulator as a relationship between manipulator settings and aberrations. The process window may be optimized by minimizing a cost function for a set of critical locations.
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公开(公告)号：US09372957B2
公开(公告)日：2016-06-21
申请号：US14600337
申请日：2015-01-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
CPC classification number: G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009
Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
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公开(公告)号：US11042687B2
公开(公告)日：2021-06-22
申请号：US16821048
申请日：2020-03-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Luoqi Chen , Jun Ye , Yu Cao
IPC: G06F30/398 , G06F30/39 , G03F7/20 , G03F1/36
Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
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公开(公告)号：US20190163866A1
公开(公告)日：2019-05-30
申请号：US16265367
申请日：2019-02-01
Applicant: ASML NETHERLANDS B.V.
Inventor： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
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