公开(公告)号：US20160313654A1

公开(公告)日：2016-10-27

申请号：US15133866

申请日：2016-04-20

Applicant: ASML Netherlands B.V.

Inventor： Si-Han ZENG ,  Yue-Lin PENG ,  Jen-Yu FANG ,  Arie Jeffrey DEN BOEF ,  Alexander STRAAIJER ,  Ching-Yi HUNG ,  Patrick WARNAAR

IPC: G03F7/20 ,  G01B11/24 ,  G01B11/27

CPC classification number: G03F7/70633 ,  G01B11/24 ,  G01B11/272

Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

Abstract translation: 公开了用于测量光刻工艺的参数的方法，计算机程序和相关联的装置。 该方法包括以下步骤：获得包括与多个第一结构相关的结构不对称性的测量的第一测量，所述多个测量结构不对称中的每一个对应于测量辐射的不同测量组合和至少第一参数的值 ; 获得与多个目标相关的目标不对称性的多个第二测量值，所述多个测量目标不对称中的每一个对应于所述不同测量组合之一，确定描述所述第一测量和所述第二测量之间的关系的关系函数， 对于每个所述测量组合; 根据所述关系函数确定校正重叠值，所述校正重叠值由于至少所述第一结构中的结构不对称而被校正为结构贡献。

公开(公告)号：US20140204397A1

公开(公告)日：2014-07-24

申请号：US14224532

申请日：2014-03-25

Applicant: ASML Netherlands B.V.

Inventor： Hendrik Jan Hidde SMILDE ,  Patrick WARNAAR

IPC: G03F9/00

CPC classification number: G03F9/00 ,  G03F7/70483 ,  G03F7/70633

Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application. A second type of correction may be applied to reduce the influence of asymmetry between the first and second modes of illumination or imaging, for example to permit a more accurate overly measurement in a semiconductor device manufacturing process.

Abstract translation: 公开了用于测量由基板上的光刻工艺形成的目标结构的方法。 目标内的光栅或其他结构小于测量光学系统的照明点和视场。 组件结构的图像的位置在测量之间变化，并且应用第一类型的校正以减少由与来自不同位置的光路的差异引起的对测量的强度的影响。 可以在光学系统的视野内同时成像多个结构，并且每个结构被校正为其各自的位置。 测量可以包括在不同照明和/或成像模式下的相同目标的第一和第二图像，例如在暗场测量应用中。 可以应用第二类型的校正来减少第一和第二照明模式或成像之间的不对称性的影响，例如以允许在半导体器件制造过程中更准确地过度测量。

公开(公告)号：US20230341783A1

公开(公告)日：2023-10-26

申请号：US17796434

申请日：2021-01-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Arnaud HUBAUX ,  Patrick WARNAAR ,  Scott Anderson MIDDLEBROOKS ,  Tijmen Pieter COLLIGNON ,  Chung-Hsun LI ,  Georgios TSIROGIANNIS ,  Sayyed Mojtaba SHAKERI

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70458 ,  G03F7/70633

Abstract: A method of determining matching performance between tools used in semiconductor manufacture and associated tools is described. The method includes obtaining a plurality of data sets related to a plurality of tools and a representation of the data sets in a reduced space having a reduced dimensionality. A matching metric and/or matching correction is determined based on matching the reduced data sets in the reduced space.

公开(公告)号：US20230236515A1

公开(公告)日：2023-07-27

申请号：US18001255

申请日：2021-06-08

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patrick WARNAAR ,  Franciscus Godefridus Casper BIJNEN ,  Olger Victor ZWIER

IPC: G03F7/00

CPC classification number: G03F7/70683 ,  G03F7/70633

Abstract: Disclosed is target arrangement comprising a first target region having at least a first pitch and at least a second pitch a second target region having at least a third pitch, wherein a portion of the first target region having a second pitch overlaps with a portion of the second target region.

公开(公告)号：US20230064193A1

公开(公告)日：2023-03-02

申请号：US17796641

申请日：2021-01-20

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Patrick WARNAAR ,  Vasco Tomas TENNER ,  Hugo Augustinus Joseph CRAMER ,  Bram Antonius Gerardus LOMANS ,  Bastiaan Lambertus Wilhelmus Marinus VAN DE VEN ,  Ahmet Burak CUNBUL ,  Alexander Prasetya KONIJNENBERG

IPC: G06T7/00 ,  G01N21/47 ,  G03F7/20 ,  G06T5/00

Abstract: Disclosed is a method of measuring a periodic structure on a substrate with illumination radiation having at least one wavelength, the periodic structure having at least one pitch. The method comprises configuring, based on a ratio of said pitch and said wavelength, one or more of: an illumination aperture profile comprising one or more illumination regions in Fourier space; an orientation of the periodic structure for a measurement; and a detection aperture profile comprising one or more separated detection regions in Fourier space. This configuration is such that: i) diffracted radiation of at least a pair of complementary diffraction orders is captured within the detection aperture profile, and ii) said diffracted radiation fills at least 80% of the one or more separated detection regions. The periodic structure is measured while applying the configured one or more of illumination aperture profile, detection aperture profile and orientation of the periodic structure.

公开(公告)号：US20220350260A1

公开(公告)日：2022-11-03

申请号：US17761475

申请日：2020-09-03

Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

Inventor： Armand Eugene Albert ,  Justin Lloyd KREUZER ,  Nikhil MEHTA ,  Patrick WARNAAR ,  Vasco Tomas TENNER ,  Patricius Aloysius Jacobus TINNEMANS ,  Hugo Augustinus Joseph CRAMER

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/95

Abstract: Disclosed is a method for a metrology measurement on an area of a substrate comprising at least a portion of a target structure. The method comprises receiving a radiation information representing a portion of radiation scattered by the are, and using a filter in a Fourier domain for removing or suppressing at least a portion of the received radiation information that does not relate to radiation that has been scattered by the target structure for obtaining a filtered radiation information for the metrology measurement, wherein characteristics of the filter are based on target information about the target structure.

公开(公告)号：US20210055663A1

公开(公告)日：2021-02-25

申请号：US17081325

申请日：2020-10-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patrick WARNAAR ,  Youping ZHANG ,  Arie Jeffrey DEN BOEF ,  Feng XIAO ,  Martin EBERT

IPC: G03F7/20 ,  G03F9/00

Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.

公开(公告)号：US20180017881A1

公开(公告)日：2018-01-18

申请号：US15650401

申请日：2017-07-14

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Murat BOZKURT ,  Patrick WARNAAR ,  Stefan Cornelis Theodorus VAN DER SANDEN

IPC: G03F9/00 ,  G01N21/956 ,  G03F7/20

CPC classification number: G03F9/7046 ,  G01N21/956 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7019

Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.