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公开(公告)号：EP4199031A1
公开(公告)日：2023-06-21
申请号：EP21215700.2
申请日：2021-12-17
Applicant: ASML Netherlands B.V.
IPC: H01J37/22
Abstract: A charged-particle optical apparatus configured to project a multi-beam of charged particles, the apparatus comprising:
a charged particle device switchable between (i) an operational configuration in which the device is configured to project the multi-beam to a sample along an operational beam path extending from a source of the multi-beam to the sample and (ii) a monitoring configuration in which the device is configured to project the multi-beam to a detector along a monitoring beam path extending from the source to the detector;
wherein the monitoring beam path diverts from the inspection beam path part way along the operational beam path.-
22.发明公开
公开(公告)号：EP4199027A1
公开(公告)日：2023-06-21
申请号：EP21215703.6
申请日：2021-12-17
Applicant: ASML Netherlands B.V.
IPC: H01J37/04
Abstract: A charged-particle apparatus generates a plurality of sub-beams from a source beam of charged particles and direct the sub-beams downbeam toward a sample position. The charged-particle apparatus comprises a charged particle source, an aperture array and a charged particle optical component. The charged-particle source comprises an emitter to emit a source beam of charged particles along a divergent path. The aperture array is positioned in the divergent path so the aperture array generates sub-beams from the source beam. The charged-particle-optical component acts on the source beam upbeam of the aperture array. The charged-particle-optical component comprises a multipole and/or a charged-particle lens. The multipole operates on the source beam to vary the position of the divergent path at the aperture array. The multipole may vary a cross-sectional shape of the divergent path at the aperture array. The charged-particle-optical lens compensates for variations in distance between the emitter and the aperture array.
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公开(公告)号：EP3809443A1
公开(公告)日：2021-04-21
申请号：EP19203966.7
申请日：2019-10-18
Applicant: ASML Netherlands B.V.
Inventor： GOOSEN, Maikel, Robert , SMAKMAN, Erwin, Paul
Abstract: Systems and methods of profiling a charged-particle beam 302 are disclosed. The method of profiling a charged-particle beam comprises activating a charged-particle source to generate the charged-particle 302 beam along a primary optical axis 304, modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave 373, detecting charged particles 312 from the modified charged-particle beam after the interaction with the standing optical wave, and determining a characteristic, e.g. a profile, of the charged-particle beam based on the detected charged particles.
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公开(公告)号：EP4449469A1
公开(公告)日：2024-10-23
申请号：EP22818444.6
申请日：2022-11-22
Applicant: ASML Netherlands B.V.
IPC: H01J37/04
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Patent Agency Ranking
公开(公告)号：EP4391009A1
公开(公告)日：2024-06-26
申请号：EP22215638.2
申请日：2022-12-21
Applicant: ASML Netherlands B.V.
Inventor： SMAKMAN, Erwin, Paul , VEENSTRA, Roy, Ramon , REN, Yan
CPC classification number: H01J2237/03620130101 , H01J37/28 , H01J37/12
Abstract: The present invention provides a charged particle device for projecting a multi-beam of charged particles towards a sample. The device comprises a plurality of sources configured to emit a respective source beam of charged particles along a respective path of a beam grid, comprising a plurality of charged particle beams, toward the sample. The device further comprises one or more elements in which an array of apertures is defined. The one or more elements respectively comprising a plurality of beam areas assigned to an individual source beam. The one or more elements is configured to operate on the charged particle beams in the beam grids of the individual source beam. Each element is separated from an adjoining element by a spacer, the spacer having at least one aperture positioned to correspond to the position of at least two beam areas.
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26.发明公开
公开(公告)号：EP4199028A1
公开(公告)日：2023-06-21
申请号：EP21216063.4
申请日：2021-12-20
Applicant: ASML Netherlands B.V.
IPC: H01J37/04 , H01J37/12 , H01J37/244 , H01J37/26 , H01J37/28 , H01J37/317
Abstract: There is provided a charged particle device for a charged particle inspection apparatus for projecting an array of sub-beams towards a sample, the charged particle device comprising: a charged particle optical element and a detector. The charged particle optical element has an up beam surface having a plurality of openings to generate an array of sub-beams from a charged particle beam. In the charged particle optical element are defined: sub-beam apertures and monitoring apertures. The sub-beam aperture extend through the charged particle element for paths of the array of sub-beams towards a sample, The monitoring aperture extends through the charged particle element. The detector is in the monitoring aperture. At least part of the detector is down-beam of the up beam surface. The detector measures a parameter of a portion of the charged particle beam incident on the detector.
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公开(公告)号：EP3846197A1
公开(公告)日：2021-07-07
申请号：EP20150384.4
申请日：2020-01-06
Applicant: ASML Netherlands B.V.
Inventor： MANGNUS, Albertus, Victor, Gerardus , GOOSEN, Maikel, Robert , SMAKMAN, Erwin, Paul , REN, Yan
IPC: H01J37/153 , H01J37/28
Abstract: An apparatus comprising a set of pixels configured to shape a beamlet approaching the set of pixels and a set of pixel control members respectively associated with each of the set of pixels, each pixel control member being arranged and configured to apply a signal to the associated pixel for shaping the beamlet.
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公开(公告)号：EP3716313A1
公开(公告)日：2020-09-30
申请号：EP19166009.1
申请日：2019-03-28
Applicant: ASML Netherlands B.V.
IPC: H01J37/28 , H01J37/244
Abstract: Systems and methods of measuring beam current in a multi-beam apparatus are disclosed. The multi-beam apparatus may include a charged-particle source configured to generate a primary charged-particle beam, and an aperture array. The aperture array may comprise a plurality of apertures configured to form a plurality of beamlets from the primary charged-particle beam, and a detector including circuitry to detect a current of at least a portion of the primary charged-particle beam irradiating the aperture array. The method of measuring beam current may include irradiating the primary charged-particle beam on the aperture array and detecting an electric current of at least a portion of the primary charged-particle beam.
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29.发明公开
公开(公告)号：EP3428726A1
公开(公告)日：2019-01-16
申请号：EP17181208.4
申请日：2017-07-13
Applicant: ASML Netherlands B.V.
Inventor： QUINTANILHA, Richard , SMAKMAN, Erwin, Paul
IPC: G03F9/00 , G01N23/225 , G01R31/305
Abstract: An inspection tool for inspecting a semiconductor substrate is described, the inspection tool comprising:
- an substrate table configured to hold the substrate;
- an electron beam source configured to project an electron beam onto an area of interest of the substrate, the area of interest comprising a buried structure;
- a cathode-luminesce detector configured to detect cathodoluminescent light emitted from the buried structure;
- a control unit configured to:
- control the electron beam source to project to electron beam onto the area of interest;
- receive a signal representative of the detected cathodoluminescent light;
- determine, based on the signal, a characteristic of the buried structure.
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