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    METHODS FOR PROVIDING LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS
    23.
    发明申请
    METHODS FOR PROVIDING LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS 审中-公开
    通过嵌段共聚物自组装提供基板上的刻蚀特征的方法

    公开(公告)号：US20150205197A1

    公开(公告)日：2015-07-23

    申请号：US14419212

    申请日：2013-07-26

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jozef Maria Finders ,  Tamara Druzhinina ,  Emiel Peeters ,  Sander Frederik Wuister ,  Christianus Martinus Van Heesch ,  Eddy Cornelis Antonius Van Der Heijden ,  Henri Marie Joseph Boots

    IPC: G03F7/00 ,  G06F17/50

    Abstract: A method of designing an epitaxy template to direct self-assembly of a block copolymer on a substrate into an ordered target pattern involves providing a primary epitaxy template design and then varying the design to optimize a pattern fidelity statistic, such as placement error, relative to the target pattern by modelling predicted self-assembled block copolymer patterns and optimizing pattern placement as a function of a varied design parameter. In addition to varying a design parameter to optimize the pattern fidelity statistic, a random error in the template design is included prior to modelling predicted patterns in order to compensate for expected template inaccuracy in practice. The inclusion of a realistic random error in the template design, in addition to systematic variation of a design parameter, may improve the template design optimization to render the result less sensitive to error which may be inevitable in practice.

    Abstract translation: 设计外延模板以将基底上的嵌段共聚物自组装成有序目标图案的方法包括提供初级外延模板设计，然后改变设计以优化图案保真度统计，例如放置误差，相对于 通过对预测的自组装嵌段共聚物图案进行模拟和优化作为不同设计参数的函数的图案放置来实现目标图案。 除了改变设计参数以优化模式保真度统计量之外，在模拟预测模式之前还包括模板设计中的随机误差，以便在实践中补偿预期的模板不准确性。 除了设计参数的系统变化之外，在模板设计中包括一个现实的随机误差，可以改进模板设计优化，使得结果对于在实践中可能是不可避免的误差较不敏感。

    METHODS OF PROVIDING PATTERNED EPITAXY TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY
    24.
    发明申请
    METHODS OF PROVIDING PATTERNED EPITAXY TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 有权
    提供用于自组装块式共聚物的图案外延模板的方法用于器件平台

    公开(公告)号：US20150050599A1

    公开(公告)日：2015-02-19

    申请号：US14387186

    申请日：2013-03-19

    Applicant: ASML Netherlands B.V.

    Inventor： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Jozef Maria Finders ,  Roelof Koole ,  Emiel Peeters ,  Harmeet Singh

    IPC: G03F7/26 ,  B05D1/32 ,  B05D3/10 ,  G03F7/20

    CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

    Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

    Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻法选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。

    Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers
    28.
    发明授权
    Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers 有权
    通过嵌段共聚物的自组装在基材上提供间隔光刻特征的方法

    公开(公告)号：US09368366B2

    公开(公告)日：2016-06-14

    申请号：US14764133

    申请日：2014-01-24

    Applicant: ASML Netherlands B.V.

    Inventor： Sander Frederik Wuister ,  Tamara Druzhinina ,  Mircea Dusa

    IPC: H01L21/30 ,  H01L21/308 ,  G03F7/00 ,  H01L21/027 ,  H01L21/033 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06 ,  B82Y10/00 ,  G03F1/50 ,  G03F1/80 ,  H01L29/78

    CPC classification number: H01L21/3086 ,  B82Y10/00 ,  G03F1/50 ,  G03F1/80 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0337 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785

    Abstract: A method of forming a plurality of regularly spaced lithography features, the method including providing a self-assemblable block copolymer having first and second blocks in a plurality of trenches on a substrate, each trench including opposing side-walls and a base, with the side-walls having a width therebetween, wherein a first trench has a greater width than a second trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in each trench, the layer having a first domain of the first block alternating with a second domain of the second block, wherein the first and second trenches have the same number of each respective domain; and selectively removing the first domain to form regularly spaced rows of lithography features having the second domain along each trench, wherein the pitch of the features in the first trench is greater than the pitch of the features in the second trench.

    Abstract translation: 一种形成多个规则间隔的光刻特征的方法，所述方法包括提供在衬底上的多个沟槽中具有第一和第二块的自组装嵌段共聚物，每个沟槽包括相对的侧壁和底部， 在其间具有宽度的壁，其中第一沟槽具有比第二沟槽更大的宽度; 使得所述自组装嵌段共聚物自组装成每个沟槽中的有序层，所述层具有所述第一嵌段的第一区域与所述第二嵌段的第二区域交替，其中所述第一和第二沟槽具有相同数量的 各个域; 并且选择性地移除所述第一区域以形成沿着每个沟槽具有所述第二区域的规则间隔的光刻特征行，其中所述第一沟槽中的所述特征的间距大于所述第二沟槽中的所述特征的间距。

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