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    Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers
    8.
    发明授权
    Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers 有权
    通过嵌段共聚物的自组装在基材上提供间隔光刻特征的方法

    公开(公告)号：US09368366B2

    公开(公告)日：2016-06-14

    申请号：US14764133

    申请日：2014-01-24

    Applicant: ASML Netherlands B.V.

    Inventor： Sander Frederik Wuister ,  Tamara Druzhinina ,  Mircea Dusa

    IPC: H01L21/30 ,  H01L21/308 ,  G03F7/00 ,  H01L21/027 ,  H01L21/033 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06 ,  B82Y10/00 ,  G03F1/50 ,  G03F1/80 ,  H01L29/78

    CPC classification number: H01L21/3086 ,  B82Y10/00 ,  G03F1/50 ,  G03F1/80 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0337 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785

    Abstract: A method of forming a plurality of regularly spaced lithography features, the method including providing a self-assemblable block copolymer having first and second blocks in a plurality of trenches on a substrate, each trench including opposing side-walls and a base, with the side-walls having a width therebetween, wherein a first trench has a greater width than a second trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in each trench, the layer having a first domain of the first block alternating with a second domain of the second block, wherein the first and second trenches have the same number of each respective domain; and selectively removing the first domain to form regularly spaced rows of lithography features having the second domain along each trench, wherein the pitch of the features in the first trench is greater than the pitch of the features in the second trench.

    Abstract translation: 一种形成多个规则间隔的光刻特征的方法，所述方法包括提供在衬底上的多个沟槽中具有第一和第二块的自组装嵌段共聚物，每个沟槽包括相对的侧壁和底部， 在其间具有宽度的壁，其中第一沟槽具有比第二沟槽更大的宽度; 使得所述自组装嵌段共聚物自组装成每个沟槽中的有序层，所述层具有所述第一嵌段的第一区域与所述第二嵌段的第二区域交替，其中所述第一和第二沟槽具有相同数量的 各个域; 并且选择性地移除所述第一区域以形成沿着每个沟槽具有所述第二区域的规则间隔的光刻特征行，其中所述第一沟槽中的所述特征的间距大于所述第二沟槽中的所述特征的间距。

    Method of preparing a pattern, method of forming a mask set, device manufacturing method and computer program
    9.
    发明授权
    Method of preparing a pattern, method of forming a mask set, device manufacturing method and computer program 有权
    制作图案的方法，形成掩模组的方法，装置制造方法和计算机程序

    公开(公告)号：US08945800B2

    公开(公告)日：2015-02-03

    申请号：US13965103

    申请日：2013-08-12

    Applicant: ASML Netherlands B.V.

    Inventor： Tsann-Bim Chiou ,  Mircea Dusa ,  Alek Chi-Heng Chen

    IPC: G03F1/22 ,  G03F1/68 ,  G03F7/26 ,  G06F17/50 ,  G03F7/20

    CPC classification number: G03F1/22 ,  G03F1/00 ,  G03F1/68 ,  G03F1/70 ,  G03F7/70341 ,  G03F7/70433 ,  G03F7/70466 ,  G06F17/5068

    Abstract: In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.

    Abstract translation: 在使用两个或多个曝光来形成设备的单层的多重图案化技术中，在多个曝光之间的单个层中的特征的分割是通过参考另一个相关层的特征进行的，并且分割 该层分为两组或多组功能，用于单独曝光。 多次曝光过程可以是涉及重复光刻蚀步骤的过程，期望地，参考分割方法优化在分离层的曝光期间使用的对准方案。

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