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公开(公告)号：US20210271178A1
公开(公告)日：2021-09-02
申请号：US17256408
申请日：2019-06-13
Applicant: ASML Netherlands B.V.
Inventor： Simon Reinald HUISMAN , Alessandro POLO
Abstract: A sensor apparatus (300) for determining a position of a target (330) of a substrate (W) comprising, projection optics (315;321) configured to project a radiation beam (310) onto the substrate, collection optics (321) configured to collect measurement radiation (325) that has scattered from the target, a wavefront sensing system (335) configured to determine a pupil function variation of at least a portion (355) of the measurement radiation and output a signal (340) indicative thereof, and a measurement system (350) configured to receive the signal and to determine the position of the target in at least partial dependence on the collected measurement radiation and the determined pupil function variation of at least a portion of the measurement radiation.
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公开(公告)号：US20210240091A1
公开(公告)日：2021-08-05
申请号：US17049597
申请日：2019-04-02
Applicant: ASML Netherlands B.V.
Inventor： Sebastianus Adrianus GOORDEN , Simon Reinald HUISMAN
IPC: G03F9/00
Abstract: A method of determining a position of a feature (for example an alignment mark) on an object (for example a silicon wafer) is disclosed. The method comprises determining an offset parameter, determining the second position; and determining a first position from the second position and the offset parameter, the position of the mark being the first position. The offset parameter is a measure of a difference in: a first position that is indicative of the position of the feature; and a second position that is indicative of the position of the feature. The offset parameter may be determined using a first measurement apparatus and the second position may be determined using a second, different measurement apparatus.
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公开(公告)号：US20210132509A1
公开(公告)日：2021-05-06
申请号：US17049707
申请日：2019-04-03
Applicant: ASML Netherlands B.V. , ASML Holding N.V.
Inventor： Simon Reinald HUISMAN , Tamer Mohamed Tawfik Ahmed Mohamed ELAZHARY , Yuxiang LIN , Vu Quang TRAN , Sebastianus Adrianus GOORDEN , Justin Lloyd KREUZER , Christopher John MASON , Igor Matheus Petronella AARTS , Krishanu SHOME , Irit TZEMAH
Abstract: An alignment sensor apparatus includes an illumination system, a first optical system, a second optical system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target on a substrate. The second optical system includes a first polarizing optic configured to separate and transmit an irradiance distribution. The detector system is configured to measure a center of gravity of the diffraction target based on the irradiance distribution outputted from a first polarization branch and a second polarization branch. The processor is configured to measure a shift in the center of gravity of the diffraction target caused by an asymmetry variation in the diffraction target and determine a sensor response function of the alignment sensor apparatus based on the center of gravity shift.
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公开(公告)号：US20190354026A1
公开(公告)日：2019-11-21
申请号：US16478068
申请日：2018-01-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Stefan Michiel WITTE , Alessandro ANTONCECCHI , Stephen EDWARD , Hao ZHANG , Paulus Clemens Maria PLANKEN , Kjeld Sijbrand Eduard EIKEMA , Sebastianus Adrianus GOORDEN , Simon Reinald HUISMAN , Irwan Dani SETIJA
Abstract: As increasing numbers of layers, using increasing numbers of specific materials, are deposited on substrates, it becomes increasingly difficult to detect alignment marks accurately for, for example, applying a desired pattern onto a substrate using a lithographic apparatus, in part due to one or more of the materials used in one or more of the layers being wholly or partially opaque to the radiation used to detect alignment marks. In a first step, the substrate is illuminated with excitation radiation. In a second step, at least one effect associated with a reflected material effect scattered by a buried structure is measured. The effect may, for example, include a physical displacement of the surface of the substrate. In a third step, at least one characteristic of the structure based on the measured effect is derived.
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公开(公告)号：US20180149987A1
公开(公告)日：2018-05-31
申请号：US15575069
申请日：2016-03-14
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus MATHIJSSEN , Arie Jeffrey DEN BOEF , Alessandro POLO , Patricius Aloysius Jacobus TINNEMANS , Adrianus Johannes Hendrikus SCHELLEKENS , Elahe YEGANEGI DASTGERDI , Willem Marie Julia Marcel COENE , Erik Willem BOGAART , Simon Reinald HUISMAN
Abstract: An alignment system, method and lithographic apparatus are provided for determining the position of an alignment mark, the alignment system comprising a first system configured to produce two overlapping images of the alignment mark that are rotated by around 180 degrees with respect to one another, and a second system configured to determine the position of the alignment mark from a spatial distribution of an intensity of the two overlapping images.
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Patent Agency Ranking
公开(公告)号：US20250060684A1
公开(公告)日：2025-02-20
申请号：US18724286
申请日：2022-12-14
Applicant: ASML Netherlands B.V.
Inventor： Simon Reinald HUISMAN , Sebastianus Adrianus GOORDEN , Stephen ROUX
IPC: G03F9/00
Abstract: A system includes optical devices, reflective devices, a movable reflective device, and a detector. The optical devices are disposed at a first plane and around a axis of the system and receive scattered radiation from targets. The reflective devices are disposed at at least a second plane and around the axis. Each of the reflective devices receives the scattered radiation from a corresponding one of the optical devices. The movable reflective device is disposed along the axis and receives the scattered radiation from each of the reflective devices. The detector receives the scattered radiation from the movable reflective device.
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公开(公告)号：US20250036031A1
公开(公告)日：2025-01-30
申请号：US18716007
申请日：2022-11-17
Applicant: ASML Netherlands B.V.
Inventor： Aniruddha Ramakrishna SONDE , Mahesh Upendra AJGAONKAR , Krishanu SHOME , Simon Reinald HUISMAN , Sebastianus Adrianus GOORDEN , Franciscus Godefridus Casper BIJNEN , Patrick WARNAAR , Sergei SOKOLOV
Abstract: Some embodiments of this disclosure can improve measurement of target mark asymmetry in metrology apparatuses for improving accuracy in measurements performed in conjunction with lithographic processes. For example, a metrology system can include a projection system configured to receive a plurality of diffraction orders diffracted from a target on a substrate. The metrology system can further include a detector array and a waveguide device configured to transmit the plurality of diffraction orders between the projection system and the detector array. The detector array can be configured to detect each of the plurality of diffraction orders spatially separate from other ones of the plurality of diffraction orders.
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公开(公告)号：US20240353761A1
公开(公告)日：2024-10-24
申请号：US18686742
申请日：2022-08-05
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70633 , G03F7/70408 , G03F9/7092
Abstract: Systems, apparatuses, and methods are provided for correcting an alignment measurement or overlay error. An example method can include measuring an observable in response to an illumination of a region of a surface by a radiation beam, such as interference between radiation diffracted from the region. The example method can further include generating a measurement signal indicative of the observable. In some aspects, the measurement signal can include interference fringe pattern data indicative of the measured interference. The example method can further include determining a correction to a measurement value based on measurement signal. Optionally, the correction can include a correction to an alignment measurement of an alignment sensor, a correction to an overlay error of an overlay sensor, or both.
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公开(公告)号：US20230418168A1
公开(公告)日：2023-12-28
申请号：US18036788
申请日：2021-11-01
Applicant: ASML Netherlands B.V.
Inventor： Simon Reinald HUISMAN , Sebastianus Adrianus GOORDEN
CPC classification number: G03F7/70633 , G03F9/7046 , G03F9/7088 , G03F9/7019
Abstract: Disclosed is a metrology system comprising: a pre-alignment metrology tool operable to measure a plurality of targets on a substrate to obtain measurement data; and a processing unit. The processing unit is operable to: process said measurement data to determine for each target at least one position distribution which describes variation of said position value over at least part of said target; and determine a measurement correction from said at least one position distribution which corrects for within-target variation in each of said targets, said measurement correction for correcting measurements performed by an alignment sensor.
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公开(公告)号：US20230229094A1
公开(公告)日：2023-07-20
申请号：US18151334
申请日：2023-01-06
Applicant: ASML Netherlands B.V.
Inventor： Simon Reinald HUISMAN , Arjan Johannes Anton BEUKMAN , Arie Jeffrey DEN BOEF , Sebastianus Adrianus GOORDEN , Nitish KUMAR , Jin LIAN , Zili ZHOU
CPC classification number: G03F9/7065 , G02B26/0833 , G02B27/283 , G03F7/70575 , G03F7/70616
Abstract: Disclosed is an illumination arrangement for spectrally shaping a broadband illumination beam to obtain a spectrally shaped illumination beam. The illumination arrangement comprises a beam dispersing element for dispersing the broadband illumination beam and a spatial light modulator for spatially modulating the broadband illumination beam subsequent to being dispersed. The illumination arrangement further comprises at least one of a beam expanding element for expanding said broadband illumination beam in at least one direction, located between an input of the illumination arrangement and the spatial light modulator; and a lens array, each lens of which for directing a respective wavelength band of the broadband illumination beam subsequent to being dispersed onto a respective region of the spatial light modulator.
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