公开(公告)号：EP4333019A1

公开(公告)日：2024-03-06

申请号：EP22193743.6

申请日：2022-09-02

Applicant: ASML Netherlands B.V.

Inventor： WIELAND, Marco, Jan-Jaco ,  KUIPER, Vincent, Sylvester ,  TSIATMAS, Anagnostis

IPC: H01J37/26 ,  H01J37/28

Abstract: An assessment method comprising: using an assessment apparatus to generate assessment signals representing a property of a surface of a sample; processing the assessment signals to identify candidate defects and outputting a candidate defect signal; monitoring the status of the assessment apparatus for error conditions and generating a status signal indicating any error conditions during functioning of the assessment apparatus; and analysing the candidate defect signal to determine if the candidate defects are real defects; wherein analysis of a candidate defect is not completed if the status signal indicates that the assessment signal(s) and/or the candidate defect signal corresponding to the candidate defect would have been affected by an error condition.

公开(公告)号：EP3451060A1

公开(公告)日：2019-03-06

申请号：EP17188175.8

申请日：2017-08-28

Applicant: ASML Netherlands B.V.

Inventor： VERMA, Alok ,  CRAMER, Hugo Augustinus Joseph ,  THEEUWES, Thomas ,  TSIATMAS, Anagnostis ,  VERSTRAETEN, Bert

IPC: G03F7/20

Abstract: A substrate comprising a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features, wherein the plurality of features comprise first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, and wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

公开(公告)号：EP3492985A1

公开(公告)日：2019-06-05

申请号：EP17205158.3

申请日：2017-12-04

Applicant: ASML Netherlands B.V.

Inventor： VENSELAAR, Joannes Jitse ,  TSIATMAS, Anagnostis ,  SAMEE-UR-REHMAN

IPC: G03F7/20

Abstract: The disclosure relates to determining information about a patterning process. In one method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target comprises at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further comprises: using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process; and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

公开(公告)号：EP3489756A1

公开(公告)日：2019-05-29

申请号：EP17203287.2

申请日：2017-11-23

Applicant: ASML Netherlands B.V.

Inventor： TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  THEEUWES, Thomas ,  DE LA FUENTE VALENTIN, Maria, Isabel ,  SHAHRJERDY, Mir, Homayoun ,  DEN BOEF, Arie, Jeffrey ,  WANG, Shu-jin

IPC: G03F7/20

Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.

公开(公告)号：EP4194952A1

公开(公告)日：2023-06-14

申请号：EP21214132.9

申请日：2021-12-13

Applicant: ASML Netherlands B.V.

Inventor： VAN DONGEN, Jeroen ,  TSIATMAS, Anagnostis ,  VERMA, Alok ,  VAN DER MEIJDEN, Vidar ,  MC NAMARA, Elliott Gerard

IPC: G03F7/20

Abstract: Disclosed is a method for determining a measurement recipe describing measurement settings for measuring a parameter of interest from a compound structure on a substrate. The method comprises obtaining first training data relating to measurements of reference targets, the targets comprising: a parameter of interest targets, each parameter of interest target having an induced set value which is varied over said parameter of interest targets; and one or more isolated feature targets, each comprising repetitions of one or more features. Second training data is obtained comprising compound structure measurement signals obtained from measurement of one or more instances of said compound structure, One or more machine learning models are trained using said first training data and second training data to infer a value for the parameter of interest from a measurement signal related to said compound structure corrected for a feature asymmetry contribution.

公开(公告)号：EP3477391A1

公开(公告)日：2019-05-01

申请号：EP17198461.0

申请日：2017-10-26

Applicant: ASML Netherlands B.V.

Inventor： VAN DER ZOUW, Gerbrand ,  VAN WEERT, Martinus Hubertus Maria ,  ZHOU, Zili ,  PANDEY, Nitesh ,  VAN KRAAIJ, Markus Gerardus Martinus Maria ,  TSIATMAS, Anagnostis

IPC: G03F7/20 ,  G03F1/24

Abstract: The disclosure relates to methods of determining a value of a parameter of interest of a patterning process, and of cleaning a signal containing information about the parameter of interest. In one arrangement, first and second detected representations of radiation are obtained. The radiation is provided by redirection of polarized incident radiation by a structure. The first and second detected representations are derived respectively from first and second polarization components of the redirected radiation. An asymmetry in the first detected representation comprises a contribution from the parameter of interest and a contribution from one or more other sources of asymmetry. An asymmetry in the second detected representation comprises a larger contribution from said one or more other sources of asymmetry relative to a contribution from the parameter of interest. A combination of the first and second detected representations is used to determine a value of the parameter of interest.

公开(公告)号：EP3321738A1

公开(公告)日：2018-05-16

申请号：EP16198272.3

申请日：2016-11-10

Applicant: ASML Netherlands B.V.

Inventor： TSIATMAS, Anagnostis ,  VERMA, Alok ,  VERSTRAETEN, Bert

IPC: G03F7/20

CPC classification number: G03F7/70466 ,  G03F7/70633

Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method comprises measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target comprises a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation comprises at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.

Abstract translation: 公开了一种测量器件制造工艺的参数的方法。 该方法包括通过用测量辐射照射目标并使用光学设备来检测由目标散射的测量辐射来测量衬底上的目标。 目标包括具有第一周期性分量和第二周期性分量的目标结构。 该光学设备接收来自目标结构的测量辐射的衍射所产生的辐射。 所接收的辐射包括将不从仅来自第一周期性成分的测量辐射的衍射接收到的至少一个衍射级，或者来自仅来自第二周期性成分的测量辐射的衍射。

公开(公告)号：EP4392829A1

公开(公告)日：2024-07-03

申请号：EP22765013.2

申请日：2022-07-28

Applicant: ASML Netherlands B.V.

Inventor： VAN DONGEN, Jeroen ,  TSIATMAS, Anagnostis ,  VERMA, Alok ,  VAN DER MEIJDEN, Vidar ,  MC NAMARA, Elliott, Gerard

IPC: G03F7/20

CPC classification number: G03F7/70633

公开(公告)号：EP3731020A1

公开(公告)日：2020-10-28

申请号：EP19171061.5

申请日：2019-04-25

Applicant: ASML Netherlands B.V.

Inventor： TURNER, Paul Jonathan ,  TSIATMAS, Anagnostis

IPC: G03F7/20

Abstract: Disclosed are a method, computer program and associated apparatuses for metrology. The method includes determining whether a substrate or substrate portion is subject to a process effect. The method comprises: obtaining inspection data comprising a plurality of sets of measurement data, for example measurement pupils; and obtaining fingerprint data describing a spatial variation of a parameter of interest. An iterative mapping of the inspection data to the fingerprint data is performed. Whether the structure is subject to a process effect is based on the degree to which the iterative mapping converges on a solution.

公开(公告)号：EP3528047A1

公开(公告)日：2019-08-21

申请号：EP18156625.8

申请日：2018-02-14

Applicant: ASML Netherlands B.V.

Inventor： PANDEY, Nitesh ,  ZHOU, Zili ,  VAN DER ZOUW, Gerbrand ,  DEN BOEF, Arie, Jeffrey ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria ,  KOOLEN, Armand, Eugene, Albert ,  CRAMER, Hugo, Augustinus Joseph ,  HINNEN, Paul, Christiaan ,  VAN WEERT, Martinus, Hubertus, Maria ,  TSIATMAS, Anagnostis ,  WANG, Shu-jin ,  FAGGINGER AUER, Bastiaan, Onne ,  VERMA, Alok

IPC: G03F7/20

Abstract: A inspection apparatus, method, and system associated therewith are described herein. In a non-limiting embodiment, a inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, and the illumination beam being polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization; generate image data representing an image of each of the feature(s) based on the intensity data; and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.