公开(公告)号：WO2017032736A1

公开(公告)日：2017-03-02

申请号：PCT/EP2016/069790

申请日：2016-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  ZHANG, Youping ,  SMILDE, Hendrik, Jan, Hidde ,  TSIATMAS, Anagnostis ,  VAN LEEST, Adriaan, Johan ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph ,  HINNEN, Paul, Christiaan

IPC: G03F7/20

CPC classification number: G03F7/70491 ,  G01N21/47 ,  G01N21/9501 ,  G03F7/70633 ,  G03F7/70683

Abstract: A substrate has first and second target structures formed thereon by a lithographic process, lithographic process comprising at least two lithographic steps. Each target structure has two-dimensional periodic structure formed in a single material layer, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount. An angle- resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.

Abstract translation: 基板通过光刻工艺在其上形成第一和第二目标结构，光刻工艺包括至少两个光刻步骤。 每个目标结构具有形成在单个材料层中的二维周期性结构，其中在第一目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第一偏置量， 在第二目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第二偏置量。 获得第一目标结构的角度分辨散射光谱和第二目标结构的角度分辨散射光谱，并且从使用在第二目标结构的散射光谱中发现的不对称性的测量值导出光刻处理参数的测量 第一和第二目标结构。

公开(公告)号：WO2017148996A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054737

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

Abstract translation: 一种配置参数确定过程的方法，所述方法包括：获得结构的数学模型，所述数学模型被配置为预测用辐射束照射所述结构时的光学响应，并且所述结构具有 在标称物理配置下的几何对称性; 由硬件计算机系统使用数学模型来模拟特定量的结构的物理配置中的扰动以确定多个像素中的每一个中的光学响应的​​对应变化以获得多个像素灵敏度; 并且基于像素灵敏度，确定用于与基板上的结构的测量像素光学特性值组合的多个权重，以产生与物理配置中的变化相关联的参数的值，每个权重对应于像素。 p>

公开(公告)号：WO2017148986A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054719

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.

Abstract translation: 确定图案化过程的参数的方法，所述方法包括：获得在标称物理配置下由具有几何对称性的结构重新引导的辐射的检测到的表示，其中所检测到的辐射表示为 通过用辐射束照射衬底获得，使得衬底上的束斑填充有该结构; 以及由硬件计算机系统基于来自检测到的辐射表示的不对称光学特性分布部分中的光学特性值以比所检测到的辐射表示的另一部分更高的权重来确定图案化处理参数的值，所述不对称光学特性分布 由于结构的物理配置不同于名义物理配置。

公开(公告)号：WO2019158328A1

公开(公告)日：2019-08-22

申请号：PCT/EP2019/051618

申请日：2019-01-23

Applicant: ASML NETHERLANDS B.V.

Inventor： PANDEY, Nitesh ,  ZHOU, Zili ,  VAN DER ZOUW, Gerbrand ,  DEN BOEF, Arie ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria ,  KOOLEN, Armand, Eugene, Albert ,  CRAMER, Hugo, Augustinus, Joseph ,  HINNEN, Paul, Christiaan ,  VAN WEERT, Martinus, Hubertus, Maria ,  TSIATMAS, Anagnostis ,  WANG, Shu-jin ,  FAGGINGER AUER, Bastiaan, Onne ,  VERMA, Alok

IPC: G03F7/20

Abstract: A inspection apparatus, method, and system associated therewith are described herein. In a non-limiting embodiment, a inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, and the illumination beam being polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization; generate image data representing an image of each of the feature(s) based on the intensity data; and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.

公开(公告)号：WO2019042726A1

公开(公告)日：2019-03-07

申请号：PCT/EP2018/071418

申请日：2018-08-07

Applicant: ASML NETHERLANDS B.V.

Inventor： VERMA, Alok ,  CRAMER, Hugo, Augustinus, Joseph ,  THEEUWES, Thomas ,  TSIATMAS, Anagnostis ,  VERSTRAETEN, Bert

IPC: G03F7/20

Abstract: A substrate comprising a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features, wherein the plurality of features comprise first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, and wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

公开(公告)号：WO2018086968A1

公开(公告)日：2018-05-17

申请号：PCT/EP2017/077914

申请日：2017-10-31

Applicant: ASML NETHERLANDS B.V.

Inventor： TSIATMAS, Anagnostis ,  VERMA, Alok ,  VERSTRAETEN, Bert

IPC: G03F7/20

Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method comprises measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target comprises a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation comprises at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.

Abstract translation: 公开了一种测量器件制造工艺的参数的方法。 该方法包括通过用测量辐射照射目标并使用光学设备来检测由目标散射的测量辐射来测量衬底上的目标。 目标包括具有第一周期性分量和第二周期性分量的目标结构。 该光学设备接收来自目标结构的测量辐射的衍射所产生的辐射。 所接收的辐射包括将不从仅来自第一周期性成分的测量辐射的衍射接收的接收的至少一个衍射级，也不接收来自仅来自第二周期性成分的测量辐射的衍射。

公开(公告)号：WO2017055075A1

公开(公告)日：2017-04-06

申请号：PCT/EP2016/071542

申请日：2016-09-13

Applicant: ASML NETHERLANDS B.V.

Inventor： VERMA, Alok ,  KHO, Sinatra, Canggih ,  VAN LEEST, Adriaan, Johan

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70625 ,  G03F7/705 ,  G03F7/70633 ,  G03F9/7092

Abstract: This disclosure includes a variety of methods of describing a shape in a hierarchical manner, and uses of such a hierarchical description. In particular, this disclosure includes a method comprising: fitting one or more sub-shapes of a first order against a shape; determining an error of the fitting; and fitting one or more sub-shapes of a second order against the error.

Abstract translation: 本公开包括以分层方式描述形状的各种方法以及这种分层描述的使用。 特别地，本公开包括一种方法，包括：将一个或多个第一阶次的子形状对准一个形状; 确定装配的误差; 并且针对该错误拟合二次的一个或多个子形状。

公开(公告)号：WO2022135890A1

公开(公告)日：2022-06-30

申请号：PCT/EP2021/084430

申请日：2021-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LAARHOVEN, Hendrik, Adriaan ,  VERMA, Alok ,  ANUNCIADO, Roy ,  DILLEN, Hermanus, Adrianus ,  VAN DER SANDEN, Stefan, Cornelis, Theodorus

IPC: G03F7/20 ,  H01L21/66

Abstract: Disclosed is a method of monitoring a semiconductor manufacturing process. The method comprises obtaining at least one first trained model being operable to derive local performance parameter data from high resolution metrology data, wherein said local performance parameter data describes a local component, or one or more local contributors thereto, of a performance metric and high resolution metrology data relating to at least one substrate having been subject to at least a part of said semiconductor manufacturing process. Local performance parameter data is determined from said high resolution metrology data using said first trained model. The first trained model is operable to determine said local performance parameter data as if it had been subject to an etch step on at least the immediately prior exposed layer, based on said high resolution metrology data comprising only metrology data performed prior to any such etch step.

公开(公告)号：WO2020078677A1

公开(公告)日：2020-04-23

申请号：PCT/EP2019/075819

申请日：2019-09-25

Applicant: ASML NETHERLANDS B.V.

Inventor： BADR, Elie ,  SHAKAHWAT MILLAT, Shawn ,  MICELI, Giacomo ,  VERMA, Alok

IPC: G03F7/20

Abstract: A method for determining an overlay metric is disclosed comprising obtaining angle resolved distribution spectrum data relating to a measurement of the target structure comprising a symmetrical component. An overlay dependent contour of a feature of said target structure is determined from said angle resolved distribution spectrum data, from which an overlay metric is determined. The method comprises exposing an exposed feature onto a masked layer comprising a mask which defines masked and unmasked areas of the layer, such that a first portion of the exposed feature is exposed on a masked area of said layer and a second portion of the exposed feature is exposed on a non-masked area of said layer, the size of the first portion with respect to the second portion being overlay dependent; and performing an etch step to define an etched feature, the etched feature corresponding to said second portion of the exposed feature.

公开(公告)号：WO2017149009A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054761

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph ,  DE LA FUENTE VALENTIN, Maria, Isabel ,  VAN WITTEVEEN, Koen ,  ZAAL, Martijn, Maria ,  WANG, Shu-jin

IPC: G03F7/20

Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.

Abstract translation: 度量目标包括：布置成通过第一图案化工艺形成的第一结构; 以及布置成通过第二图案化工艺形成的第二结构，其中第一结构和/或第二结构不用于创建器件图案的功能方面，并且其中第一和第二结构一起形成一个或多个 单位单元，所述单位单元在标称物理配置处具有几何对称性，并且其中所述单位单元具有如下特征：由于所述第一图案化工艺中的图案布置的相对偏移，在与所述标称物理配置不同的物理配置下， 第二次构图工艺和/或其他图案化工艺，单元格中的不对称性。