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    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    21.
    发明申请
    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 有权
    用于测量微结构不对称的方法和装置，位置测量方法，位置测量装置，平面设备和装置制造方法

    公开(公告)号：US20150176979A1

    公开(公告)日：2015-06-25

    申请号：US14421434

    申请日：2013-07-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Simon Gijsbert Josephus Mathijssen ,  Erik Willem Bogaart ,  Patricius Aloysius Jacobus Tinnemans ,  Arie Jeffrey Den Boef

    IPC: G01B11/14 ,  G01B9/02 ,  G01B11/27 ,  G03F7/20

    CPC classification number: G01B11/14 ,  G01B9/02 ,  G01B11/27 ,  G03F7/70058 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7069 ,  G03F9/7088

    Abstract: A lithographic apparatus includes an alignment sensor including a self-referencing interferometer for reading the position of an alignment target comprising a periodic structure. An illumination optical system for focusing radiation into a spot on said structure. An asymmetry detection optical system receives a share of positive and negative orders of radiation diffracted by the periodic structure, and forms first and second images of said spot on first and second detectors respectively, wherein said negative order radiation is used to form the first image and said positive order radiation is used to form the second image. A processor for processing together signals from said first and second detectors representing intensities of said positive and negative orders to produce a measurement of asymmetry in the periodic structure. The asymmetry measurement can be used to improve accuracy of the position read by the alignment sensor.

    Abstract translation: 光刻设备包括对准传感器，其包括用于读取包括周期性结构的对准目标位置的自参考干涉仪。 一种照明光学系统，用于将辐射聚焦到所述结构上的光斑中。 不对称检测光学系统接收通过周期性结构衍射的辐射的正数和负数的共享，并分别在第一和第二检测器上形成所述光斑的第一和第二图像，其中所述负序辐射用于形成第一图像， 所述正阶辐射用于形成第二图像。 用于处理来自所述第一和第二检测器的信号的处理器，其表示所述正序和负序的强度，以产生周期性结构中的不对称性的测量。 可以使用不对称测量来提高由对准传感器读取的位置的精度。

    Metrology method and apparatus and computer program
    23.
    发明授权
    Metrology method and apparatus and computer program 有权

    公开(公告)号：US10908513B2

    公开(公告)日：2021-02-02

    申请号：US16026507

    申请日：2018-07-03

    Applicant: ASML Netherlands B.V.

    Inventor： Marc Johannes Noot ,  Simon Gijsbert Josephus Mathijssen ,  Kaustuve Bhattacharyya ,  Jinmoo Byun ,  Hyun-Su Kim ,  Won-Jae Jang ,  Timothy Dugan Davis

    IPC: G03F7/20

    Abstract: Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.

    Position sensor, lithographic apparatus and method for manufacturing devices
    25.
    发明授权
    Position sensor, lithographic apparatus and method for manufacturing devices 有权

    公开(公告)号：US10527959B2

    公开(公告)日：2020-01-07

    申请号：US16325471

    申请日：2017-06-30

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Simon Reinald Huisman ,  Simon Gijsbert Josephus Mathijssen ,  Sebastianus Adrianus Goorden ,  Duygu Akbulut ,  Alessandro Polo

    IPC: G03F7/20 ,  G03F9/00 ,  G02B5/20 ,  G02B5/30

    Abstract: An alignment sensor for a lithographic apparatus has an optical system configured to deliver, collect and process radiation selectively in a first waveband (e.g. 500-900 nm) and/or in a second waveband (e.g. 1500-2500 nm). The radiation of the first and second wavebands share a common optical path in at least some portion of the optical system, while the radiation of the first waveband is processed by a first processing sub-system and the radiation of the second waveband is processed by a second processing sub-system. The processing subsystems in one example include self-referencing interferometers. The radiation of the second waveband allows marks to be measured through an opaque layer. Optical coatings and other components of each processing sub-system can be tailored to the respective waveband, without completely duplicating the optical system.

    Alignment method
    26.
    发明授权
    Alignment method 有权

    公开(公告)号：US10514620B2

    公开(公告)日：2019-12-24

    申请号：US16315100

    申请日：2017-08-14

    Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

    Inventor： Franciscus Godefridus Casper Bijnen ,  Simon Gijsbert Josephus Mathijssen ,  Vassili Demergis ,  Edo Maria Hulsebos

    IPC: G03F9/00

    Abstract: A method of determining the position of an alignment mark on a substrate, the alignment mark having first and second segment, the method including illuminating the alignment mark with radiation, detecting radiation diffracted by the alignment mark and generating a resulting alignment signal. The alignment signal has a first component received during illumination of the first segment only, a second component received during illumination of the second segment only, and a third component received during simultaneous illumination of both segments. The positions of the segments are determined using the first component, the second component and the third component of the alignment signal.

    Position measuring method of an alignment target
    28.
    发明授权
    Position measuring method of an alignment target 有权

    公开(公告)号：US10416577B2

    公开(公告)日：2019-09-17

    申请号：US15777162

    申请日：2016-11-29

    Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

    Inventor： Ralph Brinkhof ,  Simon Gijsbert Josephus Mathijssen ,  Maikel Robert Goosen ,  Vassili Demergis ,  Bartolomeus Petrus Rijpers

    IPC: G03F7/20 ,  G03F9/00

    Abstract: A method of measuring a position of an alignment target on a substrate using an optical system. The method includes measuring a sub-segmented target by illuminating the sub-segmented target with radiation and detecting radiation diffracted by the sub-segmented target using a detector system to obtain signals containing positional information of the one sub-segmented target. The sub-segmented target has structures arranged periodically in at least a first direction, at least some of the structures including smaller sub-structures, and each sub-segmented target is formed with a positional offset between the structures and the sub-structures that is a combination of both known and unknown components. The signals, together with information on differences between known offsets of the sub-segmented target are used to calculate a measured position of an alignment target which is corrected for the unknown component of the positional offset.

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