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    MACHINE LEARNING BASED INVERSE OPTICAL PROXIMITY CORRECTION AND PROCESS MODEL CALIBRATION
    21.
    发明申请
    MACHINE LEARNING BASED INVERSE OPTICAL PROXIMITY CORRECTION AND PROCESS MODEL CALIBRATION 有权

    公开(公告)号：US20230013919A1

    公开(公告)日：2023-01-19

    申请号：US17950502

    申请日：2022-09-22

    Applicant: ASML Netherlands B.V.

    Inventor： Marinus Aart Van Den Brink ,  Yu Cao ,  Yi Zou

    IPC: G06F30/398 ,  G06F30/392

    Abstract: A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.

    Methods of determining scattering of radiation by structures of finite thicknesses on a patterning device
    23.
    发明授权
    Methods of determining scattering of radiation by structures of finite thicknesses on a patterning device 有权

    公开(公告)号：US10996565B2

    公开(公告)日：2021-05-04

    申请号：US16483452

    申请日：2018-02-13

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Peng Liu ,  Ya Luo ,  Yu Cao ,  Yen-Wen Lu

    IPC: G03F7/20 ,  G06F30/392 ,  G06N3/08 ,  G06F30/39

    Abstract: A method including: obtaining a characteristic of a portion of a design layout; determining a characteristic of M3D of a patterning device including or forming the portion; and training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and whose supervisory signal includes the characteristic of the M3D. Also disclosed is a method including: obtaining a characteristic of a portion of a design layout; obtaining a characteristic of a lithographic process that uses a patterning device including or forming the portion; determining a characteristic of a result of the lithographic process; training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and the characteristic of the lithographic process, and whose supervisory signal includes the characteristic of the result.

    Fast freeform source and mask co-optimization method
    25.
    发明授权
    Fast freeform source and mask co-optimization method 有权

    公开(公告)号：US10592633B2

    公开(公告)日：2020-03-17

    申请号：US15959123

    申请日：2018-04-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Luoqi Chen ,  Jun Ye ,  Yu Cao

    IPC: G06F17/50 ,  G03F7/20 ,  G03F1/00 ,  G03F1/36

    Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

    Methods and system for model-based generic matching and tuning
    26.
    发明授权
    Methods and system for model-based generic matching and tuning 有权

    公开(公告)号：US10169522B2

    公开(公告)日：2019-01-01

    申请号：US14543326

    申请日：2014-11-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Yu Cao ,  Hanying Feng ,  Jun Ye

    IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F1/70

    Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

    Computational process control
    28.
    发明授权
    Computational process control 有权

    公开(公告)号：US10007192B2

    公开(公告)日：2018-06-26

    申请号：US14507553

    申请日：2014-10-06

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jun Ye ,  Yu Cao ,  James Patrick Koonmen

    IPC: G06F17/50 ,  G03F7/20 ,  G05B13/04 ,  G03F9/00 ,  B29C64/386

    CPC classification number: G03F7/70525 ,  B29C64/386 ,  G03F9/7096 ,  G05B13/04

    Abstract: The present invention provides a number of innovations in the area of computational process control (CPC). CPC offers unique diagnostic capability during chip manufacturing cycle by analyzing temporal drift of a lithography apparatus/ process, and provides a solution towards achieving performance stability of the lithography apparatus/process. Embodiments of the present invention enable optimized process windows and higher yields by keeping performance of a lithography apparatus and/or parameters of a lithography process substantially close to a pre-defined baseline condition. This is done by comparing the measured temporal drift to a baseline performance using a lithography process simulation model. Once in manufacturing, CPC optimizes a scanner for specific patterns or reticles by leveraging wafer metrology techniques and feedback loop, and monitors and controls, among other things, overlay and/or CD uniformity (CDU) performance over time to continuously maintain the system close to the baseline condition.

    Methods for performing model-based lithography guided layout design
    30.
    发明授权
    Methods for performing model-based lithography guided layout design 有权

    公开(公告)号：US09779186B2

    公开(公告)日：2017-10-03

    申请号：US14282754

    申请日：2014-05-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jun Ye ,  Yu Cao ,  Hanying Feng

    IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36

    CPC classification number: G06F17/5009 ,  G03F1/144 ,  G03F1/36

    Abstract: Methods are disclosed to create efficient model-based Sub-Resolution Assist Features (MB-SRAF). An SRAF guidance map is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade the aerial image over the process window. In one embodiment, the SRAF guidance map is used to determine SRAF placement rules and/or to fine-tune already-placed SRAFs. The SRAF guidance map can be used directly to place SRAFs in a mask layout. Mask layout data including SRAFs may be generated, wherein the SRAFs are placed according to the SRAF guidance map. The SRAF guidance map can comprise an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature.

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