公开(公告)号：US09391024B2

公开(公告)日：2016-07-12

申请号：US14850069

申请日：2015-09-10

Applicant: Applied Materials, Inc.

Inventor： Bo Xie ,  Kang Sub Yim ,  Cheng Pan ,  Sure Ngo ,  Taewan Kim ,  Alexandros T. Demos

IPC: H01L23/58 ,  H01L21/31 ,  H01L23/532 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.

Abstract translation: 本公开的实施例通常提供耐等离子体损伤的多层电介质堆叠配置。 公开了用于在本体低介电常数层上沉积薄保护性低介电常数层以产生层堆叠的方法。 结果，等离子体处理期间和之后多层堆叠的介电常数不变。

公开(公告)号：US08993444B2

公开(公告)日：2015-03-31

申请号：US13920380

申请日：2013-06-18

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Jin Xu ,  Kang Sub Yim ,  Alexandros T. Demos

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  C23C16/56 ,  H01L21/67 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/3065 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L2221/1047

Abstract: Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si—OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.

Abstract translation: 本发明的实施例一般涉及用于降低半导体制造中使用的低k电介质膜的介电常数的方法。 在一个实施例中，一种用于降低低k含硅电介质膜的介电常数（k）的方法，包括将多孔低k含硅电介质膜暴露于氢氟酸溶液，随后将低k硅 包含电介质膜到甲硅烷基化剂。 甲硅烷基化剂与多孔低k电介质膜中的Si-OH官能团反应以增加低k电介质膜中的碳浓度。

公开(公告)号：US08753449B2

公开(公告)日：2014-06-17

申请号：US13904468

申请日：2013-05-29

Applicant: Applied Materials, Inc.

Inventor： Mahendra Chhabra ,  Scott A. Hendrickson ,  Sanjeev Baluja ,  Tsutomu Kiyohara ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos

IPC: C25C1/00 ,  C23C16/44 ,  C23C14/00 ,  B05D3/06 ,  H01L21/67 ,  G02B1/00

CPC classification number: C23C16/4405 ,  B05D3/066 ,  C23C14/00 ,  C23C16/56 ,  G02B1/00 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76825

Abstract: Embodiments of the invention provide methods for curing an ultra low-k dielectric film within a UV processing chamber. In one embodiment, the method includes depositing an ultra low-k dielectric layer on a substrate in a deposition chamber, and subjecting the deposited ultra low-k dielectric layer to a UV curing processes in a UV processing chamber. The method includes stabilizing the UV processing chamber by flowing an oxygen gas and a purge gas into the UV processing chamber at a flow ratio of about 1:50000 to about 1:100. While flowing the oxygen-doped purge gas, the substrate is exposed to UV radiation to cure the deposited ultra low-k dielectric layer. The inventive oxygen-doped purge curing process provides an alternate pathway to build silicon-oxygen network of the ultra low-k dielectric material, thereby accelerating cross-linking efficiency without significantly affecting the film properties of the deposited ultra low-k dielectric material.

Abstract translation: 本发明的实施例提供了在UV处理室内固化超低k电介质膜的方法。 在一个实施例中，该方法包括在沉积室中的衬底上沉积超低k电介质层，以及在UV处理室中对沉积的超低k电介质层进行UV固化过程。 该方法包括通过以约1：50000至约1:100的流量比将氧气和净化气体流入UV处理室来稳定UV处理室。 在流过氧掺杂的净化气体的同时，衬底暴露于UV辐射以固化沉积的超低k电介质层。 本发明的氧掺杂清洗固化方法提供构建超低k电介质材料的硅 - 氧网络的替代途径，从而加速交联效率而不显着影响沉积的超低k电介质材料的膜性质。