公开(公告)号：US20220081765A1

公开(公告)日：2022-03-17

申请号：US17020256

申请日：2020-09-14

Applicant: Applied Materials, Inc.

Inventor： Bo Xie ,  Ruitong Xiong ,  Kang Sub Yim ,  Yijun Liu ,  Li-Qun Xia ,  Sure Ngo

IPC: C23C16/44 ,  H01L21/02 ,  H01J37/32 ,  B08B7/00 ,  C23C16/40 ,  C23C16/32 ,  C23C16/50

Abstract: Exemplary semiconductor processing methods to clean a substrate processing chamber are described. The methods may include depositing a dielectric film on a first substrate in a substrate processing chamber, where the dielectric film may include a silicon-carbon-oxide. The first substrate having the dielectric film may be removed from the substrate processing chamber, and the dielectric film may be deposited on at least one more substrate in the substrate processing chamber. The at least one more substrate may be removed from the substrate processing chamber after the dielectric film is deposited on the substrate. Etch plasma effluents may flow into the substrate processing chamber after the removal of a last substrate having the dielectric film. The etch plasma effluents may include greater than or about 500 sccm of NF3 plasma effluents, and greater than or about 1000 sccm of O2 plasma effluents.

公开(公告)号：US10113234B2

公开(公告)日：2018-10-30

申请号：US14801348

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Bo Xie ,  Alexandros T. Demos ,  Vu Ngoc Tran Nguyen ,  Kelvin Chan ,  He Ren ,  Kang Sub Yim ,  Mehul B. Naik

IPC: C23C16/48 ,  C23C16/40 ,  H01L21/768 ,  H01L21/3105

Abstract: Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer.

公开(公告)号：US09478460B2

公开(公告)日：2016-10-25

申请号：US14822313

申请日：2015-08-10

Applicant: Applied Materials, Inc.

Inventor： Mei-yee Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Kang Sub Yim ,  Kelvin Chan

IPC: H01L21/76 ,  H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L21/285 ,  H01L21/3105

CPC classification number: H01L21/7685 ,  H01L21/02074 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.

公开(公告)号：US09391024B2

公开(公告)日：2016-07-12

申请号：US14850069

申请日：2015-09-10

Applicant: Applied Materials, Inc.

Inventor： Bo Xie ,  Kang Sub Yim ,  Cheng Pan ,  Sure Ngo ,  Taewan Kim ,  Alexandros T. Demos

IPC: H01L23/58 ,  H01L21/31 ,  H01L23/532 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.

Abstract translation: 本公开的实施例通常提供耐等离子体损伤的多层电介质堆叠配置。 公开了用于在本体低介电常数层上沉积薄保护性低介电常数层以产生层堆叠的方法。 结果，等离子体处理期间和之后多层堆叠的介电常数不变。

公开(公告)号：US09105695B2

公开(公告)日：2015-08-11

申请号：US14285535

申请日：2014-05-22

Applicant: Applied Materials, Inc.

Inventor： Mei-yee Shek ,  Weifeng Ye ,  Li-Qun Xia ,  Kang Sub Yim ,  Kelvin Chan

IPC: H01L21/44 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/7685 ,  H01L21/02074 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.

Abstract translation: 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。 本文所述的实施例通过防止电介质表面的损坏来修复沉积的选择性，修复电介质表面的损伤，例如钴沉积过程中可能发生的损伤，以及控制钴层的沉积参数。

公开(公告)号：US08993444B2

公开(公告)日：2015-03-31

申请号：US13920380

申请日：2013-06-18

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Jin Xu ,  Kang Sub Yim ,  Alexandros T. Demos

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  C23C16/56 ,  H01L21/67 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/3065 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L2221/1047

Abstract: Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si—OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.

Abstract translation: 本发明的实施例一般涉及用于降低半导体制造中使用的低k电介质膜的介电常数的方法。 在一个实施例中，一种用于降低低k含硅电介质膜的介电常数（k）的方法，包括将多孔低k含硅电介质膜暴露于氢氟酸溶液，随后将低k硅 包含电介质膜到甲硅烷基化剂。 甲硅烷基化剂与多孔低k电介质膜中的Si-OH官能团反应以增加低k电介质膜中的碳浓度。