Abstract:
Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities (306) in a substrate (302). Wafer bonding may also be used to bond the substrate (302) to another substrate (304), such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
Abstract:
Ultrasound imaging devices and heads up displays, as well and systems utilizing both are described. In some embodiments, ultrasound data or images may be displayed on a heads up display, which may be a head-mounted display. One or more users may manipulate the images. Image capture devices and sensors may also be implemented.
Abstract:
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
Abstract:
Ultrasound imaging devices and heads up displays, as well and systems utilizing both are described. In some embodiments, ultrasound data or images may be displayed on a heads up display, which may be a head-mounted display. One or more users may manipulate the images. Image capture devices and sensors may also be implemented.