21.
    发明专利
    失效

    公开(公告)号:JPH05291115A

    公开(公告)日:1993-11-05

    申请号:JP35960592

    申请日:1992-12-25

    Applicant: CANON KK

    Abstract: PURPOSE:To remarkably reduce exposure irregularity caused by an X-ray transmission film in a low pressure chamber. CONSTITUTION:Magnification SR-X-ray 2a magnified by a mirror 3 is introduced in a low pressure chamber through a beryllium thin film 4 as an X-ray transmission film, and a wafer 7 in the low pressure chamber is exposed to the X-ray 2a. The beryllium thin film 4 is so arranged that the change direction of the thickness distribution of the beryllium thin film 4 being the X-ray transmission film coinsides with the change direction of the intensity distribution of the magnification SR-X-ray 2a. By correcting the movement curve of a shutter 5 compensating intensity distribution, exposure irregularity of a wafer 7 caused by film thickness irregularity can be reduced.

    OBSERVATION DEVICE UTILIZING X-RAY
    22.
    发明专利

    公开(公告)号:JPH0438500A

    公开(公告)日:1992-02-07

    申请号:JP14387090

    申请日:1990-06-01

    Applicant: CANON KK

    Abstract: PURPOSE:To improve brightness of a lighting system and to enable highly graded observation of objects image by using a multi-layer membranes reflecting mirror at a part of the lighting system, in the case of observation of the objects which are irradiated by X-ray, with focusing the image thereof on a preset plane. CONSTITUTION:X-ray 1 is focused onto an object 3 surface by a multi-layer membranes convex reflection mirror 2, and, at the same time, is selected to wave length to be used. The X-ray permeating through the object 3 and being confused thereby, comes into a Fresnel ring zones plate 4, and the Fresnel ring zones plate 4 focuses image 6 of the object on a detector 5 surface. Also, a part of wave length of the X-ray reflected by the multi-layer membranes reflecting mirror 2, and a part of wave length of the X-ray diffracted by the Fresnel ring zones plate 4, are made to correspond each other. Consequently, a device having a large area, can be easily manufactured, and wave length resolution thereof is not so higher than required, and also a more brighter lighting system having more higher reflectivity, can be easily obtained.

    MULTILAYERED FILM REFLECTING MIRROR FOR SOFT X-RAY AND VACUUM ULTRAVIOLET RAY

    公开(公告)号:JPH02242201A

    公开(公告)日:1990-09-26

    申请号:JP6223489

    申请日:1989-03-16

    Applicant: CANON KK

    Abstract: PURPOSE:To obtain the reflecting mirror having a high reflectivity, high irradiation durability and stability by forming periodic structures laminated on intermediate layers to thin films consisting of auxiliary materials which decrease the surface roughening of lamination boundaries. CONSTITUTION:The multilayered reflecting mirror is formed with 1st layers A1, A2... of low-refractive index layers, 2nd layers B1, B2... of high-refractive index layers, and further 3rd layers C1, C2... between the layer A and the layer B, and is formed with the periodic structures of A-C-B-A-C-B.... The low- refractive index layers consist essentially of tungsten, molybdenum, etc., and the high-refractive index layers consist essentially of light elements, such as silicon and boron. The light elements, such as carbon C or silicon oxide SiO2 alone or the compds. are used as the 3rd layer C. The surface roughening of the boundary face by the island-shaped structure arising in the growth process of the thin films is effectively prevented.

    REFLECTIVE MASK AND ITS MANUFACTURE

    公开(公告)号:JPH01175734A

    公开(公告)日:1989-07-12

    申请号:JP33522087

    申请日:1987-12-29

    Applicant: CANON KK

    Abstract: PURPOSE:To obtain a reflective mask with which soft X rays or the like can be applied positive to a substrate surface and which has low thermal expansion properties, high heat conduction properties, thermal stability and low stain and facilitates high contrast by a method wherein at least two types of materials whose optical constants are different are alternately built up on the nonreflective substrate surface and patterned to form a pattern composed of multilayer reflective parts. CONSTITUTION:At least two types of materials whose optical constants are different are alternately built up on the surface of a substrate 1 which does not reflect soft X rays or/and vacuum ultraviolet rays and are provided with a pattern composed of multilayer reflective parts 10. For instance, a PMMA layer is formed on the polished surface of the substrate 1 made of vapor growth silicon carbide as a resist layer and patterned by EB lithography. Mo and Si are employed as materials for 1st layers 2, 4, 6... and 2nd layers 3, 5, 7... respectively and 41 layers of them are built up by sputtering evaporation so as to make the film thicknesses of the 1st layers and the 2nd layers 27Angstrom and 38Angstrom respectively. Further, a carbon film with a thickness of 10Angstrom is built up as a protective film B. Then MPPA of the patterned resist A is removed and a pattern composed of the multilayer reflective parts 10 can be formed.

    MULTI-LAYERED REFLECTING MIRROR FOR X-RAY AND VACUUM ULTRAVIOLET RAY

    公开(公告)号:JPH0192698A

    公开(公告)日:1989-04-11

    申请号:JP24969587

    申请日:1987-10-05

    Applicant: CANON KK

    Abstract: PURPOSE:To enhance the reflectivity of a specular surface by specifying the surface roughness value of a base plate surface by the rms value of a heterodyne interference type surface roughness meter and specifying the same by the rms value at the time of observing the section. CONSTITUTION:Layers 2, 3 of a 1st material and layers 3, 5 of a 2nd material which are different in refractive index from each other are alternately laminated on the base plate 1. The surface roughness value of the base plate 1 surface is reduced to =100Angstrom and

    RADIATION LIGHT IRRADIATION DEVICE AND ITS METHOD

    公开(公告)号:JPH1172598A

    公开(公告)日:1999-03-16

    申请号:JP15193198

    申请日:1998-05-18

    Applicant: CANON KK

    Abstract: PROBLEM TO BE SOLVED: To enable dirt removal without damaging an element with a simple constitution by irradiating a reaction gas introduced into an optical element chamber with a radiation light to produce ozone. SOLUTION: A silicon dioxide-made oblique incident mirror coated with gold is used as an optical element for radiation light 7. A protection valve 3 and a transmission filter 4 set on a beam line 2 are closed by a linear introduction machine, and next, after the valve 9 of a device side is closed, oxygen gas is introduced from a gas introduction inlet 5 into a chamber 6. A valve is provided on the edge of an exhaust opening 8, and gas pressure in the chamber 6 is kept at 2 Torr. Thereafter, the protection valve 3 is opened to irradiate the surface of the oblique incident mirror with the transmission light of the filter 4. The quartz of 0.5 mm thick is used as the material of the filter 4. After the state is left for about 15 hours as it is, cleaning is completed.

    METHOD AND DEVICE OF MANUFACTURING REFLECTING MASK AS WELL AS EXPOSURE DEVICE AND SEMICONDUCTOR DEVICE USING THE REFLECTING MASK

    公开(公告)号:JPH07240363A

    公开(公告)日:1995-09-12

    申请号:JP3171194

    申请日:1994-03-02

    Applicant: CANON KK

    Abstract: PURPOSE:To solve the wafer manufacturing problem even in a configurationally defective substrate so that non-reflecting parts may be positioned on the defective parts of a mask substrate. CONSTITUTION:The arrangement of a working mask 104 is processed so that the positional reference 107 stored in a memory 108 may be located on the non-reflecting parts of a pattern to compute the positions to the position references 407 of the pattern for deciding the shifting positions. At this time, the pattern position to the positional references 407 is stored in a memory 108 for the wafer exposure using a reflecting mask. Successively, the position of the working mask 104 is shifted according to the decided contents through the intermediary of a mask shifting mechanism 105 so as to be irradiated with exposure beams 101 for the pattern formation. Through these procedures, all the defectives 406 are to be located either outside the pattern or on non- reflecting parts thereby enabling the unfavorable effect of the defectives in the wafer exposure time to be averted.

    METHOD AND APPARATUS FOR CONTROL OF TEMPERATURE OF MEMBER TO BE IRRADIATED

    公开(公告)号:JPH05190409A

    公开(公告)日:1993-07-30

    申请号:JP2326292

    申请日:1992-01-13

    Applicant: CANON KK

    Abstract: PURPOSE:To prevent a beam of irradiation light from being changed by the thermal strain during a photodetection operation of photodetection faces at projection systems such as a mirror, a lens, a mask and the like. CONSTITUTION:In a semiconductor aligner, X-rays 3 are magnified by means of a convenx mirror 1 and a wafer 4 is exposed to light. In the semiconductor aligner, the photodetection face of the mirror 1 is heated by using an infrared heater 7 which has been combined with an aperture 8 which adjusts the distribution of supplied heat before an exposure operation by using the X-rays 3 is started, and a temperature distribution which is the same as the temperature distribution of the photodetection face during a photodetection operation is caused. The temperature distribution of the photodetection face of the mirror 1 is monitored by using an infrared camera 5 even during the exposure operation and the temperature distribution is maintained to be definite. Thereby, it is possible to prevent an irregularity in the exposure operation.

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