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公开(公告)号：CA2077572C
公开(公告)日：1998-08-18
申请号：CA2077572
申请日：1992-09-04
Applicant: CANON KK
Inventor： NIIBE MASAHITO , FUKUDA YASUAKI , HAYASHIDA MASAMI
IPC: G03F7/20 , G05D5/00 , H01L21/027 , G05D23/19
Abstract: A temperature distribution of an object, such as an optical element, onto which radiation energy is irradiated, is measured. The change of the shape of the object is controlled by varying the temperature of a part of the object on the basis of the measured temperature distribution to stabilize the shape of the object. Also, the shape of the object being irradiated is stabilized by causing the same temperature distribution in the object when in the thermally stable condition to be generated in the object while it is being irradiated. If the shapes of masks used to manufacture semiconductor devices are stabilized by using the above methods, highly integrated semiconductor devices can be manufactured.
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公开(公告)号：DE69016147D1
公开(公告)日：1995-03-02
申请号：DE69016147
申请日：1990-10-03
Applicant: CANON KK
Inventor： IIZUKA TAKASHI , FUKUDA YASUAKI , HAYASHIDA MASAMI , NIIBE MASAHITO
Abstract: A method and apparatus for removing unclear matter on an optical element (7) used with a radiation beam, is disclosed. A filter (4) is used to introduce light of a desired wavelength into a chamber (6) in which the optical element is accommodated; and a gas (5) supplying device is used to supply a reactive gas which is reactable with the unclear matter on the surface of the optical element (7); and a vacuum-evacuating device is used to vacuum-evacuate the inside of the chamber.
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公开(公告)号：DE3856054D1
公开(公告)日：1997-12-04
申请号：DE3856054
申请日：1988-02-18
Applicant: CANON KK
Inventor： IKEDA TSUTOMU , WATANABE YUTAKA , SUZUKI MASAYUKI , HAYASHIDA MASAMI , FUKUDA YASUAKI , OGURA SHIGETARO , IIZUKA TAKASHI , NIIBE MASAHITO
Abstract: A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.
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公开(公告)号：DE69220116D1
公开(公告)日：1997-07-10
申请号：DE69220116
申请日：1992-03-17
Applicant: CANON KK
Inventor： HAYASHIDA MASAMI , WATANABE YUTAKA
IPC: G03F1/22 , G03F7/20 , H01L21/027
Abstract: Disclosed are an X-ray lithography mask, an exposure apparatus and an exposure process such as an X-ray lithography exposure apparatus and an X-ray lithography exposure process. An X-ray lithography mask includes an X-ray transmission membrane, a transfer pattern depicted on the X-ray transmission membrane and a frame for supporting the X-ray transmission membrane. The transfer pattern is depicted on the basis of a changing direction of a film thickness profile of the X-ray transmission membrane. In the exposure apparatus and process, a changing direction of an intensity profile of a radiation light illuminated on an exposure area of a mask is coincident with a changing direction of a film thickness profile of a light transmission membrane on the mask and an illumination time of the radiation light for the exposure area is changed on the basis of the intensity profile of the radiation light and the thickness profile of the light transmission membrane so that the intensity of a transfer pattern image formed by the transmission of the radiation light through the light transmission membrane is rendered uniform.
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公开(公告)号：DE69016147T2
公开(公告)日：1995-05-24
申请号：DE69016147
申请日：1990-10-03
Applicant: CANON KK
Inventor： IIZUKA TAKASHI , FUKUDA YASUAKI , HAYASHIDA MASAMI , NIIBE MASAHITO
Abstract: A method and apparatus for removing unclear matter on an optical element (7) used with a radiation beam, is disclosed. A filter (4) is used to introduce light of a desired wavelength into a chamber (6) in which the optical element is accommodated; and a gas (5) supplying device is used to supply a reactive gas which is reactable with the unclear matter on the surface of the optical element (7); and a vacuum-evacuating device is used to vacuum-evacuate the inside of the chamber.
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Patent Agency Ranking
公开(公告)号：DE69220116T2
公开(公告)日：1997-10-16
申请号：DE69220116
申请日：1992-03-17
Applicant: CANON KK
Inventor： HAYASHIDA MASAMI , WATANABE YUTAKA
IPC: G03F1/22 , G03F7/20 , H01L21/027
Abstract: Disclosed are an X-ray lithography mask, an exposure apparatus and an exposure process such as an X-ray lithography exposure apparatus and an X-ray lithography exposure process. An X-ray lithography mask includes an X-ray transmission membrane, a transfer pattern depicted on the X-ray transmission membrane and a frame for supporting the X-ray transmission membrane. The transfer pattern is depicted on the basis of a changing direction of a film thickness profile of the X-ray transmission membrane. In the exposure apparatus and process, a changing direction of an intensity profile of a radiation light illuminated on an exposure area of a mask is coincident with a changing direction of a film thickness profile of a light transmission membrane on the mask and an illumination time of the radiation light for the exposure area is changed on the basis of the intensity profile of the radiation light and the thickness profile of the light transmission membrane so that the intensity of a transfer pattern image formed by the transmission of the radiation light through the light transmission membrane is rendered uniform.
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公开(公告)号：DE69121972T2
公开(公告)日：1997-02-13
申请号：DE69121972
申请日：1991-05-31
Applicant: CANON KK
Inventor： HAYASHIDA MASAMI , WATANABE YUTAKA , NIIBE MASAHITO , IIZUKA TAKASHI , FUKUDA YASUAKI
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公开(公告)号：DE69121972D1
公开(公告)日：1996-10-17
申请号：DE69121972
申请日：1991-05-31
Applicant: CANON KK
Inventor： HAYASHIDA MASAMI , WATANABE YUTAKA , NIIBE MASAHITO , IIZUKA TAKASHI , FUKUDA YASUAKI
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公开(公告)号：CA2077572A1
公开(公告)日：1993-03-08
申请号：CA2077572
申请日：1992-09-04
Applicant: CANON KK
Inventor： NIIBE MASAHITO , FUKUDA YASUAKI , HAYASHIDA MASAMI
IPC: G03F7/20 , G05D5/00 , G05D23/19 , H01L21/027
Abstract: A temperature distribution of an object, such as an optical element (2), onto which radiation energy (1) is irradiated, is measured. The change of the shape of the object is controlled by varying the temperature of a part of the object on the basis of the measured temperature distribution to stabilize the shape of the object. Also, the shape of the object being irradiated is stabilized by causing the same temperature distribution in the object when in the thermally stable condition to be generated in the object while it is being irradiated. If the shapes of masks used to manufacture semiconductor devices are stabilized by using the above methods, highly integrated semiconductor devices can be manufactured.
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公开(公告)号：DE3856054T2
公开(公告)日：1998-03-19
申请号：DE3856054
申请日：1988-02-18
Applicant: CANON KK
Inventor： IKEDA TSUTOMU , WATANABE YUTAKA , SUZUKI MASAYUKI , HAYASHIDA MASAMI , FUKUDA YASUAKI , OGURA SHIGETARO , IIZUKA TAKASHI , NIIBE MASAHITO
Abstract: A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.
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