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公开(公告)号：DE69009561D1
公开(公告)日：1994-07-14
申请号：DE69009561
申请日：1990-03-30
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU
Abstract: A semiconductor laser element selectively emitting lights differing in corresponding quantized energy from each other comprises a substrate (1), a laser resonator provided on the substrate (1) and having end surfaces opposed to each other, the resonator comprising semiconductor layers including an active layer (4) of quantum well structure and laminated on the substrate (1), and a plurality of electrodes (71, 72) juxtaposed in the direction of resonance of the resonator, the electrodes independently pouring an electric current into the active layer (4), the end surface loss of the resonator being set so that a light corresponding to greater quantized energy may be oscillated when electric currents are poured at equal densities from the plurality of electrodes (71, 72) into the active layer and that a light corresponding to smaller quantized energy may be oscillated when electric currents are poured at different densities from the plurality of electrodes (71, 72) into the active layer (4).
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公开(公告)号：DE3884366T2
公开(公告)日：1994-01-27
申请号：DE3884366
申请日：1988-12-27
Applicant: CANON KK
Inventor： SHIMIZU AKIRA , IKEDA SOTOMITSU
Abstract: A second harmonic wave generating device comprises: a substrate (33); an active layer (34) formed on said substrate and adapted for generating light of a wavelength lambda in response to the injection of a current; a layer (31) of a second harmonic wave generating material formed on the substrate and adapted for generating light of a wavelength lambda /2 from the light generated in the active layer; and a pair of electrodes (35,36) for supplying the active layer with a current.
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公开(公告)号：DE69627951T2
公开(公告)日：2004-05-13
申请号：DE69627951
申请日：1996-10-14
Applicant: CANON KK
Inventor： MOTOI TAIKO , TSUKAMOTO TAKEO , IKEDA SOTOMITSU , NAKAMURA KUMI , KOBAYASHI TOYOKO , MIURA NAOKO
Abstract: An electron-emitting device has a pair of device electrodes formed on a substrate, an electroconductive film connecting the device electrodes and an electron-emitting region formed in the electroconductive film. The electron-emitting device is manufactured by (1) applying an ink containing the material for producing the electroconductive film to a predetermined position of the substrate in the form of one or more than one drops by means an ink-jet apparatus, (2) drying and/or baking the applied drop(s) to turn the drop(s) into an electroconductive thin film and (3) applying a voltage to the pair of device electrodes to flow an electric current through the electroconductive film and produce an electron-emitting region. The steps (1) and (2) are so conducted that the electroconductive film formed by the steps (1) and (2) have a latent image apt to produce an electron-emitting region by the Joule's heat generated by the step (3).
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公开(公告)号：CA2296839C
公开(公告)日：2001-10-16
申请号：CA2296839
申请日：1995-08-02
Applicant: CANON KK
Inventor： KISHI FUMIO , YAMAMOTO KEISUKE , IKEDA SOTOMITSU , OHNISHI TOSHIKAZU , MIYAZAKI KAZUYA , TSUKAMOTO TAKEO , YAMANOBE MASATO , HAMAMOTO YASUHIRO
IPC: H01J1/30
Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5nm and a spot diameter of 1.mu.m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580cm-1 is greater than a peak (P1) located in the vicinity of 1,335cm-1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335cm-1 is not greater than 150cm-1.
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公开(公告)号：DE69033645D1
公开(公告)日：2000-11-16
申请号：DE69033645
申请日：1990-03-29
Applicant: CANON KK
Inventor： SHIMIZU AKIRA , IKEDA SOTOMITSU
IPC: H01S5/06 , H01S5/062 , H01S5/0625 , H01S5/125 , H01S5/22 , H01S5/34 , H01S5/40 , H01S5/50 , H01S5/32 , H01S5/10
Abstract: A semiconductor laser device capable of emitting lights of different wavelengths has a substrate (1), a first light-emitting layer (11a) provided on the substrate (1), and a second light-emitting layer (11b) provided on the substrate (1) and having a greater band gap than the first light-emitting layer. A barrier layer (12) is disposed between the first and second light-emitting layers (11a, b). The barrier layer (12) has a band gap greater than those of the first (11a) and second (11b) light-emitting layers. The band gap and the thickness of the barrier layer (12) are determined to be large enough to create, in response to injection of carriers to the light-emititng layers, a state in which the carrier density in the second light-emitting layer (11b) is made higher while the carrier density in the first light-emitting layer (11a) is made lower than those which would be obtained when the barrier layer (12) is omitted. The device further has a pair of cladding layers (3, 5) sandwiching therebetween the first light-emitting layer (11a), the barrier layer (12) and the second light-emitting (11b) layer, the cladding layers (3, 5) having smaller refractive index values than the first and second light-emitting layers (11a, b). The device further has electrodes (7, 8) for supplying electrical currents to the first and second light-emitting layers (11a, b).
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Patent Agency Ranking
公开(公告)号：AU713697B2
公开(公告)日：1999-12-09
申请号：AU2495595
申请日：1995-07-12
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU , YAMANOBE MASATO , KAWADE HISAAKI , OHNISHI TOSHIKAZU , IWASAKI TATSUYA
Abstract: An electron-emitting device has a pair of device electrodes and an electroconductive thin film including an electron emitting region arranged between the electrodes. The device is manufactured via an activation process for increasing the emission current of the device. The activation process includes steps of a) applying a voltage (Vact) to the electroconductive thin film having a gap section under initial conditions, b) detecting the electric performance of the electroconductive thin film and c) modifying, if necessary, the initial conditions as a function of the detected electric performance of the electroconductive thin film.
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公开(公告)号：AU3395699A
公开(公告)日：1999-08-19
申请号：AU3395699
申请日：1999-06-09
Applicant: CANON KK
Inventor： KISHI FUMIO , YAMANOBE MASATO , TSUKAMOTO TAKEO , OHNISHI TOSHIKAZU , YAMAMOTO KEISUKE , IKEDA SOTOMITSU , HAMAMOTO YASUHIRO , MIYAZAKI KAZUYA
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29.发明专利
公开(公告)号：AU3294295A
公开(公告)日：1996-04-18
申请号：AU3294295
申请日：1995-09-28
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU , YAMANOBE MASATO , NOMURA ICHIRO , SUZUKI HIDETOSHI , BANNO YOSHIKAZU , TSUKAMOTO TAKEO , KAWATE SHINICHI , TAKEDA TOSHIHIKO , YAMAMOTO KEISUKE , SANDO KAZUHIRO , HAMAMOTO YASUHIRO
Abstract: In a manufacture method of an electron-emitting device in which an electro-conductive film having an electron-emitting region is provided between electrodes disposed on a substrate, a step of forming the electron-emitting region comprises a step of forming a structural latent image in the electro-conductive film, and a step of developing the structural latent image. An electron source comprising a plurality of electron-emitting devices arrayed on a substrate, and an image-forming apparatus in combination of the electron source and an image-forming member are manufactured by using the electron-emitting devices manufactured by the above method. The position and shape of an electron-emitting region of each electron-emitting device can be controlled so as to achieve uniform device characteristics, resulting less variations in the amount of emitted electrons between the electron-emitting devices and in the brightness of pictures. Also, the need of flowing.a great current for formation of the electron-emitting region is eliminated and hence the current capacity of wiring can be reduced.
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公开(公告)号：DE3884366D1
公开(公告)日：1993-10-28
申请号：DE3884366
申请日：1988-12-27
Applicant: CANON KK
Inventor： SHIMIZU AKIRA , IKEDA SOTOMITSU
Abstract: A second harmonic wave generating device comprises: a substrate (33); an active layer (34) formed on said substrate and adapted for generating light of a wavelength lambda in response to the injection of a current; a layer (31) of a second harmonic wave generating material formed on the substrate and adapted for generating light of a wavelength lambda /2 from the light generated in the active layer; and a pair of electrodes (35,36) for supplying the active layer with a current.
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