Electron Beam Apparatus and Image-Forming Apparatus

    公开(公告)号:CA2126535A1

    公开(公告)日:1995-06-29

    申请号:CA2126535

    申请日:1994-06-22

    Applicant: CANON KK

    Abstract: In an electron beam apparatus comprising an enclosure in which an electron-emitting device having an electron-emitting region between opposite electrodes is disposed, the electron-emitting device exhibits such a characteristic as that an emission current is uniquely determined with respect to a device voltage. The interior of the enclosure is maintained under an atmosphere effective to prevent structural changes of the electron-emitting device. An image-forming apparatus comprises an enclosure in which an electron source and an image-forming member are disposed, the electron source comprising the above electron-emitting device. An emission current is stable with a very small change in the amount of electrons emitted, a sharp image is produced with high contrast, and gradation control is easily carried out.

    26.
    发明专利
    未知

    公开(公告)号:AT527693T

    公开(公告)日:2011-10-15

    申请号:AT07738746

    申请日:2007-03-08

    Applicant: CANON KK

    Abstract: The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.

    28.
    发明专利
    未知

    公开(公告)号:DE69937074D1

    公开(公告)日:2007-10-18

    申请号:DE69937074

    申请日:1999-02-15

    Applicant: CANON KK

    Abstract: A method for producing an electron-emitting device comprising an electroconductive film having an electron-emitting region between electrodes, wherein a step of forming the electron-emitting region in the electroconductive film comprises steps of heating and energizing the electroconductive film, wherein an atmosphere in which a gas for promoting cohesion of the electroconductive film is introduced following the start of those steps of heating and energising.

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