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公开(公告)号:AU717388B2
公开(公告)日:2000-03-23
申请号:AU4687197
申请日:1997-12-04
Applicant: CANON KK
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公开(公告)号:CA2120390A1
公开(公告)日:1994-10-06
申请号:CA2120390
申请日:1994-03-31
Applicant: CANON KK
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公开(公告)号:AT405942T
公开(公告)日:2008-09-15
申请号:AT99101104
申请日:1994-04-05
Applicant: CANON KK
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公开(公告)号:AT249093T
公开(公告)日:2003-09-15
申请号:AT99101106
申请日:1994-04-05
Applicant: CANON KK
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公开(公告)号:DE69530826D1
公开(公告)日:2003-06-26
申请号:DE69530826
申请日:1995-11-30
Applicant: CANON KK
Inventor: OKUDA MASAHIRO , ASAI AKIRA , MASUTANI SHIGEKI
Abstract: An electron-emitting device having an electron-emitting portion (6,3) between a lower potential side electrode (4) and a higher potential side electrode (5) which are opposite to each other, the electron-emitting device including a field correction electrode (7) disposed adjacent to the lower potential side electrode or the higher potential side electrode and capable of independently supplying a potential.
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公开(公告)号:DE69132928D1
公开(公告)日:2002-03-21
申请号:DE69132928
申请日:1991-08-08
Applicant: CANON KK
Inventor: FUJII KAZUHITO , SHIMIZU AKIRA , OKUDA MASAHIRO
IPC: H01L29/66 , H01L29/76 , H01L29/82 , H01L31/101 , H01L29/205
Abstract: Novel electron wave combining and/or branching devices and Aharonov-Bohm type quantum interference devices are proposed, which have no curved electron waveguide structures to form an electron branching or decoupling part or ring geometry. But instead the electron branching part or ring geometry is effectively constructed in a straight double quantum well structures, by the control of the shapes of the wave functions or of the subband energy levels relative to the Fermi level by electric fields.
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公开(公告)号:DE69130816D1
公开(公告)日:1999-03-11
申请号:DE69130816
申请日:1991-08-02
Applicant: CANON KK
Inventor: TOMITA YASUO , ODA HITOSHI , OKUDA MASAHIRO
IPC: G02F1/095
Abstract: In a polarization-state converting apparatus for use as an optical isolator, an optical modulator and the like there are provided a waveguide comprising a magnetic semiconductor, a device- for applying a magnetic field to the waveguide in a first predetermined direction, a device for applying an electric field to the waveguide in a second predetermined direction, and a mode conversion is caused via electrooptic and magnetooptic effects due to the electric and magnetic fields to change the polarization state of light propagating through the waveguide. When used as an optical isolator, the optical isolation is performed compensating for degradation of the mode conversion rate due to a phase mismatch between light incident upon the waveguide and light emerging from the waveguide. When used as an optical modulator, the optical modulation of light emerging from the waveguide is performed by varying the electric field and an optical isolation function is effected while compensating for degradation of the mode conversion rate due to a phase mismatch between light incident upon the waveguide and light emerging from the waveguide.
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公开(公告)号:AU681622B2
公开(公告)日:1997-09-04
申请号:AU5927794
申请日:1994-04-05
Applicant: CANON KK
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公开(公告)号:AT155284T
公开(公告)日:1997-07-15
申请号:AT94105255
申请日:1994-04-05
Applicant: CANON KK
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公开(公告)号:DE69109553D1
公开(公告)日:1995-06-14
申请号:DE69109553
申请日:1991-07-10
Applicant: CANON KK
Inventor: ONO TAKEO , OKUDA MASAHIRO
IPC: H01S5/062 , H01S5/10 , H01S5/12 , H01S5/34 , H01S5/50 , H04B10/291 , H01S3/103 , H01S3/25 , H01S3/085 , G02F1/015 , H04B10/00
Abstract: An optical semiconductor device with wavelength selectivity comprises a substrate (21), a collector layer (22) provided on said substrate and composed of a semiconductor having a first conductive type, a multiple quantum well layer (23) provided on said collector layer, a base layer (24,25,26) provided on said multiple quantum well layer (23) and composed of a semiconductor having a second conductive type, said base layer consisting of an active layer (25), and first and second semiconductor layers (24,26) with said active layer sandwiched and having a wider band gap than said active layer, said base layer (24,25,26) and said multiple quantum well layer (23) propagating the light, an emitter layer (27) provided on said base layer and composed of a semiconductor having the first conductive type, and a collector electrode (30), a base electrode (29,29') and an emitter electrode (28) electrically connected to said collector layer (22), base layer (24,25,26) and emitter layer (27), respectively.
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