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公开(公告)号:AT405942T
公开(公告)日:2008-09-15
申请号:AT99101104
申请日:1994-04-05
Applicant: CANON KK
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公开(公告)号:AT249093T
公开(公告)日:2003-09-15
申请号:AT99101106
申请日:1994-04-05
Applicant: CANON KK
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公开(公告)号:DE69332017D1
公开(公告)日:2002-07-18
申请号:DE69332017
申请日:1993-12-28
Applicant: CANON KK
Inventor: YAMANOBE MASATO , OSADA YOSHIYUKI , NOMURA ICHIRO , SUZUKI HIDETOSHI , KANEKO TETSUYA , KAWADE HISAAKI , SATO YASUE , KASANUKI YUJI , TAKEDA TOSHIHIKO , MISHINA SHINYA , NAKAMURA NAOTO , TOSHIMA HIROAKI , ISONO AOJI , SUZUKI NORITAKE , TODOKORO YASUYUKI , YAMAGUCHI EIJI
Abstract: An electron source emits electrons as a function of input signals. The electron source comprises a substrate (1), a matrix of wires having m row wires and n column wires laid on the substrate with an insulator layer interposed therebetween, and a plurality of surface-conduction electron-emitting devices each having a pair of electrodes (5,6) and a thin film (4) including an electron emitting region (3) and arranged between the electrodes. The electron-emitting devices are so arranged as to form a matrix with the electrodes connected to the respective row and column wires. Each pixel unit is irradiated by at least two electron beams emitted from the respective electron emitting regions which are juxtaposed with interleaving the higher potential device electrode therebetween and a gap interval W in the juxtaposing direction of which satisfies equation (1) below: K2 x 2H(Vf/Va) ≥ W/2 ≥ K3 x 2H(Vf/Va) where K2 = 1.25 +/- 5.05, K3 = 0.35 +/- 0.05, H is the distance between the surface-conduction electron-emitting devices and the image-forming member, Vf is the voltage applied to the surface-conduction electron-emitting device and Va is the voltage applied to the image-forming member.
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公开(公告)号:AU681622B2
公开(公告)日:1997-09-04
申请号:AU5927794
申请日:1994-04-05
Applicant: CANON KK
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公开(公告)号:AT155284T
公开(公告)日:1997-07-15
申请号:AT94105255
申请日:1994-04-05
Applicant: CANON KK
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公开(公告)号:AU674173B2
公开(公告)日:1996-12-12
申请号:AU5279693
申请日:1993-12-30
Applicant: CANON KK
Inventor: YAMANOBE MASATO , OSADA YOSHIYUKI , NOMURA ICHIRO , SUZUKI HIDETOSHI , KANEKO TETSUYA , KAWADE HISAAKI , SATO YASUE , KASANUKI YUJI , YAMAGUCHI EIJI , TAKEDA TOSHIHIKO , MISHINA SHINYA , NAKAMURA NAOTO , TOSHIMA HIROAKI , ISONO AOJI , SUZUKI NORITAKE , TODOKORO YASUYUKI
Abstract: An electron source emits electrons as a function of input signals. The electron source comprises a substrate (1), a matrix of wires having m row wires and n column wires laid on the substrate with an insulator layer interposed therebetween, and a plurality of surface-conduction electron-emitting devices each having a pair of electrodes (5,6) and a thin film (4) including an electron emitting region (3) and arranged between the electrodes. The electron-emitting devices are so arranged as to form a matrix with the electrodes connected to the respective row and column wires. Each pixel unit is irradiated by at least two electron beams emitted from the respective electron emitting regions which are juxtaposed with interleaving the higher potential device electrode therebetween and a gap interval W in the juxtaposing direction of which satisfies equation (1) below: K2 x 2H(Vf/Va) ≥ W/2 ≥ K3 x 2H(Vf/Va) where K2 = 1.25 +/- 5.05, K3 = 0.35 +/- 0.05, H is the distance between the surface-conduction electron-emitting devices and the image-forming member, Vf is the voltage applied to the surface-conduction electron-emitting device and Va is the voltage applied to the image-forming member.
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公开(公告)号:AT282895T
公开(公告)日:2004-12-15
申请号:AT01128996
申请日:1993-12-28
Applicant: CANON KK
Inventor: YAMANOBE MASATO , OSADA YOSHIYUKI , NOMURA ICHIRO , SUZUKI HIDETOSHI , KANEKO TETSUYA , KAWADE HISAAKI , SATO YASUE , KASANUKI YUJI , TAKEDA TOSHIHIKO , MISHINA SHINYA , NAKAMURA NAOTO , TOSHIMA HIROAKI , ISONO AOJI , SUZUKI NORITAKE , TODOKORO YASUYUKI , YAMAGUCHI EIJI
Abstract: An electron source emits electrons as a function of input signals. The electron source comprises a substrate (1), a matrix of wires having m row wires and n column wires laid on the substrate with an insulator layer interposed therebetween, and a plurality of surface-conduction electron-emitting devices each having a pair of electrodes (5,6) and a thin film (4) including an electron emitting region (3) and arranged between the electrodes. The electron-emitting devices are so arranged as to form a matrix with the electrodes connected to the respective row and column wires. Each pixel unit is irradiated by at least two electron beams emitted from the respective electron emitting regions which are juxtaposed with interleaving the higher potential device electrode therebetween and a gap interval W in the juxtaposing direction of which satisfies equation (1) below: K2 x 2H(Vf/Va) ≥ W/2 ≥ K3 x 2H(Vf/Va) where K2 = 1.25 +/- 5.05, K3 = 0.35 +/- 0.05, H is the distance between the surface-conduction electron-emitting devices and the image-forming member, Vf is the voltage applied to the surface-conduction electron-emitting device and Va is the voltage applied to the image-forming member.
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公开(公告)号:AT219288T
公开(公告)日:2002-06-15
申请号:AT93121009
申请日:1993-12-28
Applicant: CANON KK
Inventor: YAMANOBE MASATO , OSADA YOSHIYUKI , NOMURA ICHIRO , SUZUKI HIDETOSHI , KANEKO TETSUYA , KAWADE HISAAKI , SATO YASUE , KASANUKI YUJI , TAKEDA TOSHIHIKO , MISHINA SHINYA , NAKAMURA NAOTO , TOSHIMA HIROAKI , ISONO AOJI , SUZUKI NORITAKE , TODOKORO YASUYUKI , YAMAGUCHI EIJI
Abstract: An electron source emits electrons as a function of input signals. The electron source comprises a substrate (1), a matrix of wires having m row wires and n column wires laid on the substrate with an insulator layer interposed therebetween, and a plurality of surface-conduction electron-emitting devices each having a pair of electrodes (5,6) and a thin film (4) including an electron emitting region (3) and arranged between the electrodes. The electron-emitting devices are so arranged as to form a matrix with the electrodes connected to the respective row and column wires. Each pixel unit is irradiated by at least two electron beams emitted from the respective electron emitting regions which are juxtaposed with interleaving the higher potential device electrode therebetween and a gap interval W in the juxtaposing direction of which satisfies equation (1) below: K2 x 2H(Vf/Va) ≥ W/2 ≥ K3 x 2H(Vf/Va) where K2 = 1.25 +/- 5.05, K3 = 0.35 +/- 0.05, H is the distance between the surface-conduction electron-emitting devices and the image-forming member, Vf is the voltage applied to the surface-conduction electron-emitting device and Va is the voltage applied to the image-forming member.
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公开(公告)号:AU717388B2
公开(公告)日:2000-03-23
申请号:AU4687197
申请日:1997-12-04
Applicant: CANON KK
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公开(公告)号:DE69411350T2
公开(公告)日:1998-11-19
申请号:DE69411350
申请日:1994-10-27
Applicant: CANON KK
Inventor: ISONO AOJI , OSADA YOSHIYUKI , SUZUKI HIDETOSHI , YAMAGUCHI EIJI , TAKEDA TOSHIHIKO , TOSHIMA HIROAKI , SUZUKI NORITAKE , TODOKORO YASUYUKI
Abstract: This invention relates to an electron source and an image forming apparatus each of which particularly comprises a surface conduction type electron emitting element as an electron emitting element, a method of manufacturing an electron source and an image forming apparatus, in which the energization forming treatment step of the surface conduction type electron emitting element is performed by applying a voltage to an electron emitting portion formation thin film via a nonlinear element connected in series with the thin film and having nonlinear voltage/current characteristics, an electron source and an image forming apparatus in each of which the nonlinear element is connected in series with the surface conduction type electron emitting element, and a method of driving the same. Typical nonlinear elements include rectification and diode elements. In addition an element for removing a noise component superposed on the input signal is connected in series with surface conduction type electron emitting element.
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