SEMICONDUCTOR FLOW VELOCITY SENSOR
    21.
    发明专利

    公开(公告)号:JPH01239464A

    公开(公告)日:1989-09-25

    申请号:JP6678288

    申请日:1988-03-19

    Inventor: NAKAMURA OSAMU

    Abstract: PURPOSE:To accurately know the velocity of fluid by providing a low part and a high part consisting of semiconductor layers which generate a temperature difference on a heat generating body layer provided on a substrate, adhering a metal layer on either part, and supplying gas or liquid thereto and generating an electromotive force by Seebeck effect between the semiconductor layers and metal layer according to the temperature difference. CONSTITUTION:An N-type heating layer 2 which generates heat by being supplied with a current and a P-type semiconductor layer 3 which becomes an electric insulating layer are laminated on an Si substrate 1, and a corrugated N-type semiconductor layer 4 consisting of step-shaped mountain parts 4c having low parts 4 and high parts 4b is formed thereupon. Then an SiO2 film 5 is adhered from the high part 4b to one low part 4a, and a metal layer 6 of Al, etc., is provided thereupon; and those are connected in series, and a voltmeter V is connected between both ends. Then a constant current is supplied to the layer 2 to generate the temperature difference between the low part 4a and high part 4b of the mountain part 4c, and the gas or liquid is supplied to the layers 4 and 6 to generate the electromotive force based upon the Seebeck effect between the layers, thereby knowing the flow velocity from the intensity of the electromagnetic force.

    MAGNETIC THIN FILM ELEMENT AND MANUFACTURE THEREOF

    公开(公告)号:JPH01122105A

    公开(公告)日:1989-05-15

    申请号:JP27931687

    申请日:1987-11-06

    Abstract: PURPOSE:To inexpensively and easily manufacture a magnetic thin film having a low Curie temperature at near a room temperature by incorporating a Curie temperature lower than that of a single crystalline gadolinium in a polycrystalline gadolinium thin film. CONSTITUTION:A polycrystalline gadolinium thin film has a Curie temperature lower than that (293K) of a single crystalline gadolinium thin film. Film forming conditions and heat treating conditions and the like are altered thereby to vary the Curie temperature in a predetermined range. Thus, since an application temperature range of the case that it is employed for a heat sensitive switch or an inductance element is increased, the necessity of employing an expensive GGG substrate or the like is eliminated, and complicated steps such as an epitaxial growth are not required, it can be inexpensively and easily manufactured.

    Method of manufacturing reactor, and reactor
    23.
    发明专利
    Method of manufacturing reactor, and reactor 审中-公开
    制造反应器和反应器的方法

    公开(公告)号:JP2010120809A

    公开(公告)日:2010-06-03

    申请号:JP2008295620

    申请日:2008-11-19

    CPC classification number: Y02P70/56

    Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a reactor, which can be suitably used for suppressing the breakage and deterioration of the reactor based on thermal expansion, while assuring the range of material choice. SOLUTION: The method of manufacturing a reactor includes a reactor body preparation process of preparing a reactor body equipped with a reacting zone, a heating section preparation process of preparing a heating zone for at least heating the reacting zone, and a first arrangement process of adjusting the positions of the body of the reactor and the heating section. The heating section preparation process includes a heat insulating material provision process of preparing a heat insulating material, a flattered film formation process of forming a flattered film with a flat surface on the heat insulating material, and a heating section forming process of forming a heating section for generating heat by turning on electricity on the flattered film. The first arrangement process matches the location of the body of the reactor with the location of the heating section so that the heating section and the body of the reactor are directed to each other in a non-contact state. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种制造反应器的方法,其可以适当地用于在确保材料选择的范围的同时基于热膨胀来抑制反应器的断裂和劣化。 解决方案:制造反应器的方法包括制备装备有反应区的反应器体的反应器主体制备方法,制备用于至少加热反应区的加热区的加热段制备方法,以及第一布置 调整反应器的主体和加热部的位置的处理。 加热部制备工艺包括制备绝热材料的绝热材料提供过程,在绝热材料上形成具有平坦表面的平坦薄膜的平坦成膜工艺以及形成加热部分的加热部分形成工艺 用于通过在电镀膜上打开电力来产生热量。 第一布置过程将反应器主体的位置与加热部分的位置相匹配,使得加热部分和反应器的主体以非接触状态彼此指向。 版权所有(C)2010,JPO&INPIT

    DRIVING METHOD FOR RECORDING APPARATUS, AND RECORDING APPARATUS

    公开(公告)号:JP2002067318A

    公开(公告)日:2002-03-05

    申请号:JP2000259648

    申请日:2000-08-29

    Abstract: PROBLEM TO BE SOLVED: To provide a driving method for a recording apparatus which fairly controls an allowable range of the number of recording elements driving simultaneously and gives stable and good printing quality, and a recording apparatus for the method. SOLUTION: An optional point in the range between PS and PL of an ink discharge speed correctly recorded when driving only one recording element is defined as a reference point. When defining an recording energy decreasing rate from the reference point to the lower limit PS in the range as a%, each resistance value of a plurality of recording elements as Rt, a resistance value of a common wiring connecting an end of the recording element and a power source generating a predetermined voltage as Rk, and the number of the recording elements to which the voltage is impressed simultaneously as n, they are made to satisfy an expression [(Rt+Rk)/(Rt+nRk)>=(1-a/100)1/2].

    INK JET PRINTING HEAD
    25.
    发明专利

    公开(公告)号:JP2001038904A

    公开(公告)日:2001-02-13

    申请号:JP21911599

    申请日:1999-08-02

    Abstract: PROBLEM TO BE SOLVED: To provide an ink jet printing head high in reliability having resistance against the corrosion or peel of the electrode of a heating element. SOLUTION: The opposed direction (broken line 43) of individual electrodes 23 and a common electrode 21 has a certain angle θ1 of inclination with respect to the direction (broken line 45) rightangled to a common ink supply passage and crosses the ink inflow direction to heating parts 25 at a predetermined angle θ2. By this constitution, the connection parts 41, 42 connecting the heating parts 25, the individual electrodes 23 and the common electrode 21 can be covered with a seal partition wall 31-2 and a demarcating partition wall 31-3 and all of the electrodes do not generate the electrochemical reaction with ink and are prevented from corrosion or peeling and an ink jet printing head high in reliability is constituted.

    HEAT GENERATING RESISTOR FOR THERMAL INK-JET PRINTER AND PRODUCTION THEREOF

    公开(公告)号:JP2000289207A

    公开(公告)日:2000-10-17

    申请号:JP19236199

    申请日:1999-07-06

    Abstract: PROBLEM TO BE SOLVED: To provide a heat generating resistor for a thermal ink-jet printer of a long life with a sufficient resistibility and durability to cavitation, and durable for practical use without a protection film. SOLUTION: A sputtering operation is executed using a target with a predetermined amount of an Si embedded in a Ta substrate or with an SiO2 sintered. The substrate temperature is set at about 200 deg.C, and the film formation rate is set at about 20 Å/min. Thereafter, a heat treatment (annealing) is executed at 400 deg.C for 10 minutes so as to obtain a Ta-Si-O based thin film (heat generating resistor film) of a 240 Å thickness on the Si substrate. As to the Ta-Si-O based thin film 26 composition, the mole ratio Si/Ta of the Si and the Ta is 0.35

    COLD CATHODE, MANUFACTURE OF COLD CATHODE, AND COLD CATHODE FLUORESCENT TUBE

    公开(公告)号:JPH10269986A

    公开(公告)日:1998-10-09

    申请号:JP7427597

    申请日:1997-03-26

    Abstract: PROBLEM TO BE SOLVED: To keep low discharge voltage for a long time in a cold cathode used in a cold cathode fluorescent tube or the like. SOLUTION: An electron emission film 4 of a cold cathode 1 is made of, for example, yttrium oxide represented by YOx (1.32>x>=0.95). The yttrium oxide has NaCl type crystal structure or the structure similar to the NaCl type. The yttrium oxide is a good conductor. The cold cathode using the yttrium oxide has low discharge voltage and stable discharge voltage even after long discharge. The yttrium oxide exists in the form of Y2 O3 in an equilibrium state, and existence in the form of YO in an equilibrium state is not known. When yttrium metal is oxidized by very small amount of oxygen in a hydrogen 1 containing atmosphere, an yttrium oxide not in the equilibrium state can be obtained. That is, the yttrium oxide represented by YOx (1.32>x>=0.95) can be obtained.

    LUMINOUS DEVICE
    28.
    发明专利

    公开(公告)号:JPH09306422A

    公开(公告)日:1997-11-28

    申请号:JP14856296

    申请日:1996-05-21

    Inventor: NAKAMURA OSAMU

    Abstract: PROBLEM TO BE SOLVED: To provide a highly efficient luminous device which easily releases an electron from an electron emitting electrode and has a low luminous voltage. SOLUTION: In a glass sealed tube 12, a pair of opposed electron emitting electrodes 13, 13 are arranged. In this electron emitting electrode 13, in a surface of an electrode substrate 13A formed of inconel (Ni-Cr system material), an electron emitting layer 13B formed of yttrium (Y) is formed. A film thickness of this electron emitting layer 13B is set to, for instance, about 30000Å. By this constitution, an electron is easily emitted from the electron emitting electrode 13, low voltage of a cold cathode fluorescent tube and low power consumption can be attained.

    COLD CATHODE
    29.
    发明专利

    公开(公告)号:JPH09283006A

    公开(公告)日:1997-10-31

    申请号:JP11215896

    申请日:1996-04-10

    Inventor: NAKAMURA OSAMU

    Abstract: PROBLEM TO BE SOLVED: To provide a cold cathode having a low discharge voltage, and high efficiency and stability. SOLUTION: A cold cathode is prepared as follows: a raw material solution containing lanthanum nitrate La(NO3 )3 .6H2 O (S1) is prepared and applied on an electrode substrate (S2), the resulting film is subjected to preliminary reaction treatment in vacuum, at a temperature of ordinary temperature to 350 deg.C for about 30 minutes (S3), the electrode substrate is then heated in an electric furnace at a temperature of 700 deg.C to 750 deg.C so as to convert the raw solid film to an oxide crystalline film composed mainly of lanthanum oxide (S4). Then, the electrode substrate is treated in a reduction furnace to remove needless oxides therefrom (S5). The electrode substrate thus prepared is then cut and bent in a form of an electrode of the cold cathode fluorescent tube and assembled into the tube. In the cold cathode, the metal film as formed on the surface of the electrode, composed mainly of lanthanum oxide of lanthanum shows a high electron emission characteristic and sputter-resistance, so that it is useful as a cold cathode having a low discharge voltage, and a high efficiency and stability.

    ELECTRODE FOR ELECTRON EMISSION, ASSOCIATE FLUORESCENT PANEL, AND MANUFACTURE OF PANEL

    公开(公告)号:JPH06111789A

    公开(公告)日:1994-04-22

    申请号:JP28396892

    申请日:1992-09-28

    Inventor: NAKAMURA OSAMU

    Abstract: PURPOSE:To provide an electron emitting electrode with its drive voltage stabilized, provide a fluorescent panel incorporating the electrode, and establish a method of manufacturing the fluorescent panel. CONSTITUTION:A fluorescent panel 10 includes an enclosed chamber 13 bounded by an upper glass plate 11 and a lower glass plate 12, and a pair of electron emitting electrodes 1 are arranged in this chamber 13. Each electrode 1 is so structured that a surface electrode 3 and a protection film 4 are laid one over another upon a metal board 2, wherein the protection film 4 consists of oxide 5. When a discharge voltage is impressed on the electrode 1 to generate electric discharge, the oxide 5 is sputtered and removed, and a metal lump 6 of the film 4 which does not become oxide 5 remains on the surface electrode 3. If thereafter a drive voltage is impressed on the fluorescent panel 10 to generate lighting, it removes the oxide film re-attached to the surface electrode 3 by the oxygen inside of the panel 10, and the removed oxide film is adsorbed to the metal film 6 sputtered with the drive voltage, and finally attachment of oxide film to the surface electrode 3 nullifies entirely.

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