Abstract:
A flexible circuit board includes a flexible light-permeable carrier, a circuit layer, a mark and a stiffener. The circuit layer and the mark are located on a top surface of the flexible light-permeable carrier. A predetermined area and a stiffener mounting area corresponding to each other are defined on the top surface and a bottom surface of the flexible light-permeable carrier, respectively. The mark is opaque to create a shadow mark having a longitudinal reference side and a lateral reference side on the bottom surface. The stiffener is adhered to the stiffener mounting area defined on the bottom surface by aligning with the longitudinal reference side and the lateral reference side of the shadow mark.
Abstract:
A chip on film package includes a chip and a flexible substrate having a film and a circuit layer. The circuit layer is formed on a first surface of the film and electrically connected to the chip. At least one groove is recessed on a second surface of the film. The flexible substrate is bent to form flat portions and at least one curved portion located between the flat portions when it is bonded to external electronic components. The groove is located on the curved portion and provided to protect the curved portion of the flexible substrate from breaking.
Abstract:
A chip on film package includes a chip and a flexible substrate having a film and a circuit layer. The circuit layer is formed on a first surface of the film and electrically connected to the chip. At least one groove is recessed on a second surface of the film. The flexible substrate is bent to form flat portions and at least one curved portion located between the flat portions when it is bonded to external electronic components. The groove is located on the curved portion and provided to protect the curved portion of the flexible substrate from breaking.
Abstract:
A method for manufacturing a semiconductor device includes an extra etching process. A bump or a UBM layer is etched additionally in the extra etching process after forming the semiconductor device such that the semiconductor device can conform to the standard of performance and appearance.
Abstract:
A manufacturing method of a substrate with a bump structure, a copper layer is formed on a semiconductor substrate, and a nickel layer is formed on the copper layer. A bump structure is composed of the copper layer and the nickel layer, wherein the hardness of the bump structure after annealing process depends on the thickness of the nickel layer to meet the user's demand. The hardness of the bump structure meets the user's demand prevents a glass substrate from cracking when the substrate with the bump structure is bonded with the glass substrate.