Light-emitting device and manufacturing method thereof

    公开(公告)号:US10741734B2

    公开(公告)日:2020-08-11

    申请号:US16262116

    申请日:2019-01-30

    Abstract: The application discloses a light-emitting device including a carrier, a light-emitting element and a connecting structure. The carrier includes a first connecting portion and a first necking portion extended from the first connecting portion. The first connecting portion has a first width, and the first necking portion has a second width. The second width is less than the first width. The light-emitting element includes a first light-emitting layer being able to emit a first light and a first contacting electrode formed under the first light-emitting layer. The first contacting electrode is corresponded to the first connecting portion. The connecting structure includes a first electrical connecting portion and a protecting portion surrounding the first electrical connecting portion. The first electrical connecting portion is electrically connected to the first connecting portion and the first contacting electrode. The first connecting portion substantially is located within a range surrounded by the protecting portion.

    Light-emitting device and manufacturing method thereof

    公开(公告)号:US10522721B2

    公开(公告)日:2019-12-31

    申请号:US16047734

    申请日:2018-07-27

    Abstract: A light-emitting device includes a light-emitting element, a wavelength conversion layer, a light pervious element and a light-reflecting enclosure. The light-emitting element includes a top surface, a bottom surface, and a side surface between the top surface and the bottom surface. The wavelength conversion layer covers the top surface of the light-emitting element, and includes a plurality of wavelength conversion particles having an equivalent particle diameter D50. The light pervious element includes a recess structure and an outer wall. The light-reflecting enclosure surrounds the outer wall. The D50 of the wavelength conversion particles is not great than 10 μm. The recess structure is laterally overlapped with the side surface of the light-emitting element and the wavelength conversion layer.

    Light-emitting device and manufacturing method thereof

    公开(公告)号:US10381536B2

    公开(公告)日:2019-08-13

    申请号:US15699598

    申请日:2017-09-08

    Abstract: A light-emitting device includes a light-emitting element, a light pervious layer, an electrode defining layer, a first soldering pad and a second soldering pad. The light-emitting element has an upper surface, a bottom surface, and a lateral surface arranged between the upper surface and the bottom surface. The light pervious layer covers the upper surface and the lateral surface. The electrode defining layer covers a part of the light pervious layer. The first soldering pad and the second soldering pad are surrounded by the electrode defining layer. A gap is located between the first soldering pad and the second soldering pad while the gap remains substantially constant.

    LIGHT-EMITTING DEVICE
    28.
    发明申请

    公开(公告)号:US20170250327A1

    公开(公告)日:2017-08-31

    申请号:US15442063

    申请日:2017-02-24

    CPC classification number: H01L33/60 H01L33/486 H01L33/507

    Abstract: An embodiment of present disclosure discloses a light-emitting device which includes a light-emitting unit, a transparent covering structure, a first reflective structure, a second reflective structure, and a wavelength conversion structure. The light-emitting unit includes a light-emitting surface, a bottom surface opposite to the light-emitting surface, a side surface, a first conductive electrode, and a second conductive electrode. The first conductive electrode and the second conductive electrode are located on the bottom surface. The transparent covering structure covers the light-emitting surface and the side surface. The first reflective structure surrounds the transparent covering structure. The second reflective structure is disposed under the first reflective structure and surrounds the first conductive electrode and the second conductive electrode. The wavelength conversion structure is disposed on the first reflective structure and the transparent covering structure.

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