Kontaktübergänge für Transistor- und Diodenarray in Dünnfilmtechnik für ein Bildgebungspaneel oder ähnliches

    公开(公告)号:DE102006056995B4

    公开(公告)日:2018-03-22

    申请号:DE102006056995

    申请日:2006-11-30

    Applicant: GEN ELECTRIC

    Abstract: Einrichtung: mit einem isolierenden Substrat (210) und mit einem ersten Bereich, der wenigstens eine oder mehrere Metallschichten aufweist, wobei auf der wenigstens einen oder den mehreren Metallschichten (214, 218, 222) eine dielektrische Schicht angeordnet ist, wobei in der dielektrischen Schicht ein oder mehrere Kontaktübergänge (200, 202, 206) ausgebildet sind, um eine Diodenschicht (226) an die wenigstens eine oder mehrere Metallschichten anzuschließen, und mit einem zweiten Bereich, der keinen oder mehrere Kontaktübergänge (204, 304, 700, 702, 704) aufweist, die in der dielektrischen Schicht ausgebildet sind, um die Diodenschicht (226) mit wenigstens dem isolierenden Substrat (210) zu verbinden, wobei wenigstens einige der Kontaktübergänge (204, 304, 700, 702, 704) an einem freien Randbereich keine elektrische Funktion mit dem isolierenden Substrat haben.

    24.
    发明专利
    未知

    公开(公告)号:DE102004048756A1

    公开(公告)日:2005-04-21

    申请号:DE102004048756

    申请日:2004-10-05

    Applicant: GEN ELECTRIC

    Abstract: A solid-state imager with back-side irradiation. The present invention provides a solid-state imager that includes a substantially radiation transparent substrate adapted to receive incident radiation. The radiation travels through the substrate and a pixelated array of photosensitive elements to a scintillator material, which absorbs the radiation. The pixelated array of photosensitive elements receives light photons and measures the amount of light generated by radiation interactions with the scintillator material. With this imager, there is less spreading and blurring and thus a better quality image. In another embodiment, there is a substantially transparent material disposed between the pixelated array of photosensitive elements and the scintillator material. The substantially transparent material absorbs and substantially blocks electrons from entering the active regions of the pixelated array of photosensitive elements. This enables the imager to perform for a longer period of time according to its specifications.

    25.
    发明专利
    未知

    公开(公告)号:DE10357919A1

    公开(公告)日:2004-07-29

    申请号:DE10357919

    申请日:2003-12-11

    Applicant: GEN ELECTRIC

    Abstract: The production of an imaging array comprises forming a first dielectric barrier (66); forming a light block (68) on the first dielectric barrier, where the light block is coextensive with a gate; and forming a second dielectric barrier (70) on the first dielectric barrier and the light block, such that the light block is encapsulated between the first and second dielectric barriers. An Independent claim is also included for a medical imaging system comprising a radiation source; and a radiation detector operationally coupled to the radiation source, and comprising the imaging array.

    26.
    发明专利
    未知

    公开(公告)号:DE10353197A1

    公开(公告)日:2004-06-09

    申请号:DE10353197

    申请日:2003-11-13

    Applicant: GEN ELECTRIC

    Abstract: A technique for compensating for a retained image includes employing bimodal readout of alternating light and dark images. The bimodal readout technique results from reading either light or dark frames more rapidly, allowing additional time to be allocated to the X-ray exposures occurring prior to the light frames or to the other reading operation. The bimodal readout may be accomplished by a binning procedure by which scan lines are binned and read, typically during dark frame readout. The images acquired from reading the dark frames may then be used to compensate for a retained image artifacts present in the image derived from light frames.

    27.
    发明专利
    未知

    公开(公告)号:FR2847418A1

    公开(公告)日:2004-05-21

    申请号:FR0312870

    申请日:2003-11-03

    Applicant: GEN ELECTRIC

    Abstract: A technique for compensating for a retained image includes employing bimodal readout of alternating light and dark images. The bimodal readout technique results from reading either light or dark frames more rapidly, allowing additional time to be allocated to the X-ray exposures occurring prior to the light frames or to the other reading operation. The bimodal readout may be accomplished by a binning procedure by which scan lines are binned and read, typically during dark frame readout. The images acquired from reading the dark frames may then be used to compensate for a retained image artifacts present in the image derived from light frames.

    28.
    发明专利
    未知

    公开(公告)号:DE69632020D1

    公开(公告)日:2004-05-06

    申请号:DE69632020

    申请日:1996-12-17

    Applicant: GEN ELECTRIC

    Abstract: A method of repairing an open circuit defect in a damaged address line in a thin film electronic imager device includes the steps of forming a repair area (160) on the device so as to expose the open-circuit defect in the damaged address line and then depositing a conductive material (170) to form a second conductive component and to coincidentally form a repair shunt (180) in the repair area so as to electrically bridge the defect. The step of forming the repair area includes the steps of ablating dielectric material disposed over the first conductive component (140) in the repair area, and etching the repair area so as to remove dielectric material (156) disposed over the defect in the address line in the repair area such that the surface of the address line conductive material is exposed but is not contaminated by the removal of the overlying dielectric material. A layer of photoresist is deposited over the imager device prior to forming the repair area, such that the photoresist layer is patterned during the ablating step and serves as a mask during the etch step.

    29.
    发明专利
    未知

    公开(公告)号:FR2831013A1

    公开(公告)日:2003-04-18

    申请号:FR0212567

    申请日:2002-10-10

    Applicant: GEN ELECTRIC

    Abstract: In one aspect of the invention a method for processing a fluoroscopic image is provided. The method includes scanning an object with an imaging system including at least one radiation source and at least one detector array, acquiring a plurality of dark images to generate a baseline image, acquiring a plurality of lag images subsequent to the baseline image, determining a plurality of parameters of a power law using at least one lag image and at least one baseline image, and performing a log-log extrapolation of the power law including the determined parameters.

    30.
    发明专利
    未知

    公开(公告)号:BR0005627A

    公开(公告)日:2001-07-03

    申请号:BR0005627

    申请日:2000-11-29

    Applicant: GEN ELECTRIC

    Abstract: A fiber optic scintillator includes (18), for example, a plurality of relatively low-density glass scintillating elements (20) for converting radiation into light and a plurality of relatively high-density glass radiation absorbing elements (40) interspersed among the plurality of scintillating elements (20). The high-density glass radiation absorbing elements (40) increase the x-ray stopping power of the scintillator and also produce electron showers which interact desirably in adjacent scintillating elements (20) to increase the luminance of the scintillator (18). The high-density glass radiation absorbing elements also absorb x-ray cross-talk from absorption of radiation in the scintillating elements (20) and desirably include optical absorbers for absorbing optical cross-talk, both of which improves the resolution of the scintillator (18). The plurality of scintillating elements (20) and high-density glass radiation absorbing elements (40) typically are fibers, and the high-density glass radiation absorbing elements (140) may define cladding around the scintillating low-density glass fibers.

Patent Agency Ranking