公开(公告)号：WO9206501A3

公开(公告)日：1992-06-11

申请号：PCT/US9107146

申请日：1991-09-27

Applicant: GEN ELECTRIC

Inventor： KINGSLEY JACK DEAN ,  KWASNICK ROBERT FORREST ,  WEI CHING-YEU ,  SAIA RICHARD JOSEPH

IPC: H01L27/14 ,  G01T1/20 ,  H01L27/146 ,  H01L31/09 ,  G01T1/24 ,  H04N5/32

CPC classification number: H01L27/14663

Abstract: A radiation imager includes a photodetector array having topographically patterned surface features, which include support islands disposed over the active portion of one or more photodetectors in the photodetector array. A structured scintillator array having individual columnar scintillator elements is disposed in fixed relation to the photodetector array so that the individual scintillator elements are disposed on scintillator support islands. A barrier layer is disposed between the support islands and the photodetector array to minimize chemical interactions between the material forming the support island and the underlying photodetector array during the fabrication process. After the support islands have been patterned, the scintillator elements are grown by selectively depositing scintillator material on the support islands.

Abstract translation: 辐射成像器包括具有形貌图案化表面特征的光电探测器阵列，其包括设置在光电探测器阵列中的一个或多个光电探测器的有源部分上方的支撑岛。 具有单独的柱状闪烁体元件的结构化闪烁体阵列以与光电探测器阵列固定的关系设置，使得单个闪烁体元件设置在闪烁体支撑岛上。 在支撑岛和光电检测器阵列之间设置阻挡层，以使在制造过程期间形成支撑岛和下面的光电检测器阵列的材料之间的化学相互作用最小化。 在支撑岛被图案化后，通过选择性地将闪烁体材料沉积在支撑岛上来生长闪烁体元件。

公开(公告)号：EP0750350A3

公开(公告)日：1998-08-26

申请号：EP96304426

申请日：1996-06-13

Applicant: GEN ELECTRIC

Inventor： POSSIN GEORGE EDWARD ,  SALISBURY ROGER STEPHEN ,  KWASNICK ROBERT FORREST

IPC: H01L21/768 ,  H01L23/522 ,  H01L27/146 ,  H01L29/786

CPC classification number: H01L27/14643

Abstract: A solid state array device includes a plurality of pixels with associated respective TFT switching transistors; a plurality of first address lines disposed in a first layer of the array device; a plurality of second conductive address lines disposed in a second layer of the array device, respective ones of said first and second address lines being disposed substantially perpendicular to one another in a matrix arrangement such that respective ones of the second address lines overlie respective ones of the first address lines at respective crossover regions; a TFT gate dielectric layer disposed in a channel region of each of the pixel TFTs and further being disposed over the first address lines; and a crossover region supplemental dielectric layer disposed in respective ones of the crossover regions between the first and second address lines, but disposed so as to not extend over the TFT channel regions.

Abstract translation: 固态阵列器件包括具有相关联的各个TFT开关晶体管的多个像素; 布置在所述阵列器件的第一层中的多个第一地址线; 布置在所述阵列器件的第二层中的多个第二导电地址线，所述第一和第二地址线中的相应的第一和第二地址线以矩阵布置为基本上彼此垂直，使得第二地址线中的相应的第二地址线覆盖在 相应交叉区域的第一地址线; 设置在每个像素TFT的沟道区域中并进一步设置在第一地址线上的TFT栅极电介质层; 以及布置在第一和第二地址线之间的交叉区域中的相应的交叉区域中的交叉区域补充电介质层，但是设置成不在TFT沟道区域上延伸。

公开(公告)号：EP0793276A3

公开(公告)日：1998-09-23

申请号：EP96309305

申请日：1996-12-19

Applicant: GEN ELECTRIC

Inventor： KWASNICK ROBERT FORREST ,  LIU JIANQIANG

IPC: H01L27/146 ,  H04N5/32 ,  H04N5/335

CPC classification number: H01L27/14643

Abstract: A solid state imager is provided that has a robust, high integrity upper barrier layer (180) disposed over photosensor pixels (125) and data address line (150) topography in the imager. Data address line spacers (160) disposed between the sidewalls (152) of the data address lines (150) and the upper barrier layer (180) provide an inclined foundation (165) for the upper barrier layer in the vicinity of the data address line sidewalls, thereby providing barrier layer high integrity step segments (185) in the region of the steps around relatively thick data address lines. The address line spacers are formed from residual photosensor semiconductive material, typically amorphous silicon, which remains following the etching steps to form deposited photosensitive semiconductive material into the pixel photosensor bodies. The spacers are typically disposed in a position corresponding to the region around the corner of the data line sidewall and the underlying material of the array, and extend along the length of the data address lines and portions of the data address lines comprising the coupling to respective pixel photosensor switching devices coupled to the address line.

Abstract translation: 提供固态成像器，其具有设置在成像器中的光电传感器像素（125）和数据地址线（150）上的鲁棒，高完整性的上阻挡层（180）。 设置在数据地址线（150）和上阻挡层（180）的侧壁（152）之间的数据地址线间隔物（160）为数据地址线附近的上阻挡层提供倾斜的基础（165） 从而在相对较厚的数据地址线周围的步骤区域中提供阻挡层高完整性步骤段（185）。 地址线间隔物由剩余的光电传感器半导体材料（通常为非晶硅）形成，其保留在蚀刻步骤之后，以将沉积的光敏半导体材料形成到像素光电传感器体中。 间隔件通常设置在对应于数据线侧壁的角落周围的区域和阵列的下层材料的位置，并且沿着数据地址线的长度和包括耦合的数据地址线的部分延伸到相应的 像素光电传感器开关器件耦合到地址线。

公开(公告)号：EP0750349A3

公开(公告)日：1998-07-22

申请号：EP96304425

申请日：1996-06-13

Applicant: GEN ELECTRIC

Inventor： SALISBURY ROBERT STEPHEN ,  KWASNICK ROBERT FORREST ,  WEI CHING-YEU

IPC: H01L23/528 ,  H01L27/146 ,  H04N5/30

CPC classification number: H01L27/146 ,  H01L23/528 ,  H01L2924/0002 ,  Y10S257/913 ,  H01L2924/00

Abstract: An imager array data line repair structure is provided for use in high performance imager arrays and includes a first and a second plurality of address lines that are disposed in respective layers with an intermediate layer having at least one insulative material disposed therebetween. The imager device further includes at least one integral address line repair segment that is disposed in the same layer as the first address lines and that is electrically isolated from the first address lines; the integral address line repair segment is disposed so as to underlie a repair portion of the second address line, with the intermediate layer disposed therebetween, and has a width substantially the same as the overlying second address line. In initial fabrication, the integral address line repair segment is electrically isolated from the overlying repair segment of the second address line; in the even a repair has been effected, the repair portion of second address line is electrically coupled to the underlying integral address line repair segment through laser welds.

公开(公告)号：JP2001188086A

公开(公告)日：2001-07-10

申请号：JP2000303184

申请日：2000-10-03

Applicant: GEN ELECTRIC

Inventor： WEI CHING-YEU ,  KWASNICK ROBERT FORREST ,  FOBARE DAVID FRANCIS

IPC: C09K11/00 ,  C09K11/62 ,  G01T1/20 ,  H01L31/09

Abstract: PROBLEM TO BE SOLVED: To provide a radiation imaging device reduced in interlayer peeling. SOLUTION: A radiation imaging device contains a photosensing imaging array 14, a shielding layer 18 formed above the photosensing imaging array, a continuous polymer layer 22 formed above the shielding layer, and a scintillator 24 formed just above the continuous polymer layer. The continuous polymer layer reduces the interlayer peeling under the conditions especially improper environment so that the contact performance of the scintilator is improved. The continuous polymer layer can be composed of materials selected from a group of polyimide, acrylic resin and parylene c.

公开(公告)号：JP2002334987A

公开(公告)日：2002-11-22

申请号：JP2001385364

申请日：2001-12-19

Applicant: GEN ELECTRIC

Inventor： POSSIN GEORGE EDWARD ,  KWASNICK ROBERT FORREST

IPC: H01L21/336 ,  H01L27/146 ,  H01L29/786 ,  H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a small number mask setting method for forming an imager that reduces charge retention and capture in a TFT, and further makes charge retention offset uniform. SOLUTION: Materials are deposited to form a photodiode island 15, and at the same time, a TFT body 29 is formed over a gate electrode 16. Then, the silicon layer of the TFT body and a common dielectric layer 18 are covered, the layer of source/drain metal 32 is deposited, the layer 32 is removed so that one portion of the silicon layer of the TFT body is exposed (a region 40 for covering the photodiode island is left), and a back channel 32 is formed in the TFT body by a back channel etch step. The region 40 is removed from the upper section of the photodiode island, and a passivation layer 44 is deposited over the entire exposed surface of an array.

公开(公告)号：JPH11202053A

公开(公告)日：1999-07-30

申请号：JP28364098

申请日：1998-10-06

Applicant: GEN ELECTRIC

Inventor： ALBAGLI DOUGLAS ,  KWASNICK ROBERT FORREST ,  POSSIN GEORGE EDWARD

IPC: G01T1/20

Abstract: PROBLEM TO BE SOLVED: To provide an imaging device in which spatial resolution has been improved. SOLUTION: A device includes a scintillator 150 with first and second surfaces 160 and 162, a photo sensor array 110 that is optically coupled to the second surface of the scintillator, and an optical crosstalk attenuation means 200 that is optically coupled to the first surface of the scintillator, is arranged for preventing a photon entering the first surface of the scintillator from being reflected along a crosstalk reflection path 185 and returning into the scintillator, and has at least a light-absorbing material. The device further preferably includes an optical screen layer that is optically coupled to the second surface of the scintillator and is constituted by an essentially transparent material with a critical refractive index that is selected so that an entering photon is selectively reflected toward the inside to reduce optical crosstalk.

公开(公告)号：JP2001008928A

公开(公告)日：2001-01-16

申请号：JP2000129531

申请日：2000-04-28

Applicant: GEN ELECTRIC

Inventor： AUFRICHTIG RICHARD ,  KWASNICK ROBERT FORREST ,  JOHN ROBERT LAMBERTY ,  JOHN CASWELL FRENCH

IPC: A61B6/00 ,  A61B8/00 ,  G06T1/00 ,  G06T3/00 ,  H04N5/225 ,  H04N5/32 ,  H04N5/367 ,  H04N7/18 ,  H04N17/00

Abstract: PROBLEM TO BE SOLVED: To provide the method and device to display images created by at least one detector in the imaging unit. SOLUTION: A pixel map is created to specify the location of an inferior pixel in a pixel array within an image found by at least one detector 120. The pixel map is linked to the image, and the selective display of the pixel map is performed. The inferior pixel indicates movement selected from a group including pixels statistically different from electrically unresponsive pixels and peripheral pixels in the pixel array. The device includes an imaging unit 110 to generate X rays that penetrate an interested object, at least one detector unit 120 and a processing unit 130 to specify inferior pixels within a detected image.

公开(公告)号：JPH10213664A

公开(公告)日：1998-08-11

申请号：JP28749997

申请日：1997-10-21

Applicant: GEN ELECTRIC

Inventor： POSSIN GEORGE EDWARD ,  ALBAGLI DOUGLAS ,  KWASNICK ROBERT FORREST ,  SAUNDERS ROWLAND FREDERICK ,  VAFI HABIB

IPC: G01T1/00 ,  H01L27/14 ,  H01L27/146 ,  H04N5/335

Abstract: PROBLEM TO BE SOLVED: To provide a radiation imaging device containing a protector against static charge. SOLUTION: Contained are a plurality of radiation detection elements 38 arranged in matrix and connected to each of address lines 16 and 22 of rows and lines and a radiation detection element array 10 having a common electrode insulated from the address line and connected to the radiation detection element. Also contained are an earth ring 14 surrounding the matrix radiation detection elements and a connection circuit electrically connected between the earth ring and the common electrode and selectively balancing the electric potentials between the common electrode and the earth ring. Further contained is a protection device 200 supporting the substrate 9 and arranged around the part of the substrate and the photodetector element array so as to have an opening 290 for making access to the photodetector element array and a plurality of contact pads 214. The protection device is electrically connected to the earth ring.

公开(公告)号：JP2002118790A

公开(公告)日：2002-04-19

申请号：JP2001234328

申请日：2001-08-02

Applicant: GEN ELECTRIC

Inventor： KWASNICK ROBERT FORREST ,  POSSIN GEORGE EDWARD ,  WEI CHING-YEU

IPC: H01L27/146 ,  H01L31/0224 ,  H04N5/32 ,  H04N5/335

Abstract: PROBLEM TO BE SOLVED: To provide an imager device for which a leakage from a sidewall of a photodiode is reduced. SOLUTION: The imager (100) is provided with photosensor pixels (110) arranged in a pixel array, and each photosensor pixel includes a photodiode (126) having the sidewall, on which a gate dielectric layer is disposed and a field plate (150) disposed around a photodiode body. The field plate comprises amorphous silicon, disposed on the gate dielectric layer and extends substantially completely around the sidewall of the photodiode. The field plate is coupled electrically with a common electrode, so as to generate an electric field around the photodiode body in correspondence with a potential of the common electrode of a photographing array.