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Patent Agency Ranking
公开(公告)号：DE69906916T2
公开(公告)日：2004-03-04
申请号：DE69906916
申请日：1999-11-03
Applicant: GEN ELECTRIC
Inventor： D EVELYN MARK PHILIP
Abstract: A method of functionalizing a diamond crystal comprises hydrogenating a diamond crystal, chlorinating the hydrogenated diamond crystal; and exposing the chlorinated diamond crystal to a metal precursor. The exposing step deposits a layer of metal on surfaces of the diamond crystals. The diamond crystal formed by the method possesses surface sites that form a strong bond with the layer of metal to prevent separation thereat, and the layer of metal form strong bonds to a matrix material, for example one of a vitreous and metallic matrix. The functionalized diamond crystal can be used in abrasive products.
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公开(公告)号：DE69906916D1
公开(公告)日：2003-05-22
申请号：DE69906916
申请日：1999-11-03
Applicant: GEN ELECTRIC
Inventor： D EVELYN MARK PHILIP
Abstract: A method of functionalizing a diamond crystal comprises hydrogenating a diamond crystal, chlorinating the hydrogenated diamond crystal; and exposing the chlorinated diamond crystal to a metal precursor. The exposing step deposits a layer of metal on surfaces of the diamond crystals. The diamond crystal formed by the method possesses surface sites that form a strong bond with the layer of metal to prevent separation thereat, and the layer of metal form strong bonds to a matrix material, for example one of a vitreous and metallic matrix. The functionalized diamond crystal can be used in abrasive products.
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公开(公告)号：AT549440T
公开(公告)日：2012-03-15
申请号：AT06013705
申请日：2003-06-25
Applicant: GEN ELECTRIC
Inventor： D EVELYN MARK PHILIP , ARTHUR STEPHEN DALEY , ROWLAND LARRY BURTON , VAGARALLI SURESH SHANKARAPPA , LUCEK JOHN WILLIAM , ANTHONY THOMAS RICHARD , LEVINSON LIONEL MONTY
IPC: C30B33/00 , C30B33/02 , B01J3/06 , C30B1/00 , H01L21/324
Abstract: A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
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公开(公告)号：DE102007034912A1
公开(公告)日：2008-02-07
申请号：DE102007034912
申请日：2007-07-24
Applicant: GEN ELECTRIC
Inventor： MCNULTY THOMAS FRANCIS , D EVELYN MARK PHILIP , LEMAN JOHN THOMAS , SHUBA ROMAN
IPC: C01B33/023 , C01B33/025
Abstract: The device for the production of silicon for use in solar cells, comprises a housing (22) having a wall, which has an interior area that bounds a chamber (28), three thermal energy sources (40, 42, 44) arranged near to the housing to deliver thermal energy to the chamber, a quartz source inlet (46) arranged at an end of the device and connected with the chamber to bring hydrocarbons into the chamber, and a gas outlet arranged at the end of the device and connected with the chamber. The device for the production of silicon for use in solar cells, comprises a housing (22) having a wall, which has an interior area that bounds a chamber (28), three thermal energy sources (40, 42, 44) arranged near to the housing to deliver thermal energy to the chamber, a quartz source inlet (46) arranged at an end of the device and connected with the chamber to bring hydrocarbons into the chamber, a gas outlet arranged at the end of the device and connected with the chamber to release the gas from the inside of the chamber to outside of the chamber, a silicon outlet arranged at an opposite end of the device and connected with the chamber to discharge the produced silicon, an oven with zones, a gas inlet arranged at opposite end of the device to supply a scavenging gas, and a hydrocarbon inlet (48) having an embedded tube to supply a coolant through the tube. The first thermal energy source is arranged to raise the temperature of more than 600[deg]C in first zone, the second thermal energy source is arranged to raise the temperature of more than 1600[deg]C in the second zone and the third thermal energy source is arranged to raise the temperature of more than 2000[deg]C in third zone. The temperature of the zones is controlled independently. The device is arranged to separate the hydrocarbon to form a coating that has carbon on the grain. The average size of the grain is 1 micrometer to 5 centimeter. The molar ratio of the quartz and carbon in the grain is 1:2. The hydrocarbon and the quartz source are continuously promoted to an end of the device and the produced silicon is collected at another end of the device.
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公开(公告)号：PL371370A1
公开(公告)日：2005-06-13
申请号：PL37137003
申请日：2003-02-21
Applicant: GEN ELECTRIC
Inventor： D EVELYN MARK PHILIP , WEBB STEVEN WILLIAM , VAGARALI SURESH SHANKARAPPA , KADIOGLU YAVUZ , PARK DONG-SIL , CHEN ZHENG
Abstract: An apparatus including a crucible, an energy source, and a controller is provided. The crucible may be sealed to a nitrogen-containing gas, and may be chemically inert to at least ammonia at a temperature in a range of about 400 degrees Celsius to about 2500 degrees Celsius. The energy source may supply thermal energy to the crucible. The controller may control the energy source to selectively direct sufficient thermal energy to a predefined first volume within the crucible to attain and maintain a temperature in the first volume to be in a range of from about 400 degrees Celsius to about 2500 degrees Celsius. The thermal energy may be sufficient to initiate, sustain, or both initiate and sustain growth of a crystal in the first volume. The first temperature in the first volume may be controllable separately from a second temperature in another volume within the crucible. The first temperature and the second temperature differ from each other. Associated methods are provided.
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