公开(公告)号：WO03083187A8

公开(公告)日：2004-10-14

申请号：PCT/US0305114

申请日：2003-02-21

Applicant: GEN ELECTRIC

Inventor： D EVELYN MARK PHILIP ,  WEBB STEVEN WILLIAM ,  VAGARALI SURESH SHANKARAPPA ,  KADIOGLU YAVUZ ,  PARK DONG-SIL ,  CHEN ZHENG

IPC: C30B29/38 ,  C30B9/00 ,  C30B9/06 ,  C30B29/40

CPC classification number: C30B29/403 ,  B82Y10/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B9/00 ,  C30B29/406 ,  Y10T117/1052 ,  Y10T117/1096

Abstract: A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material (106) and a source material (102) comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel (100); sealing the reaction vessel (100); heating the reaction vessel (100) to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.

Abstract translation: 一种形成III族金属氮化物的至少一种单晶的方法。 该方法包括以下步骤：向反应容器（100）提供包含至少一种选自铝，铟和镓的III族金属的焊剂材料（106）和源材料（102）; 密封反应容器（100）; 将反应容器（100）加热至预定温度并向容器施加预定压力。 该压力足以在该温度下抑制第III族金属氮化物的分解。 还公开了III族金属氮化物，以及通过该方法形成的具有III族金属氮化物衬底的电子器件。

公开(公告)号：DE60336715D1

公开(公告)日：2011-05-26

申请号：DE60336715

申请日：2003-02-21

Applicant: GEN ELECTRIC

Inventor： D EVELYN MARK PHILIP ,  WEBB STEVEN WILLIAM ,  VAGARALI SURESH SHANKARAPPA ,  KADIOGLU YAVUZ ,  PARK DONG-SIL ,  CHEN ZHENG

IPC: C30B9/00 ,  C30B29/38 ,  C30B9/06 ,  C30B29/40

公开(公告)号：PL371370A1

公开(公告)日：2005-06-13

申请号：PL37137003

申请日：2003-02-21

Applicant: GEN ELECTRIC

Inventor： D EVELYN MARK PHILIP ,  WEBB STEVEN WILLIAM ,  VAGARALI SURESH SHANKARAPPA ,  KADIOGLU YAVUZ ,  PARK DONG-SIL ,  CHEN ZHENG

IPC: C30B29/38 ,  C30B9/00 ,  C30B9/06

Abstract: An apparatus including a crucible, an energy source, and a controller is provided. The crucible may be sealed to a nitrogen-containing gas, and may be chemically inert to at least ammonia at a temperature in a range of about 400 degrees Celsius to about 2500 degrees Celsius. The energy source may supply thermal energy to the crucible. The controller may control the energy source to selectively direct sufficient thermal energy to a predefined first volume within the crucible to attain and maintain a temperature in the first volume to be in a range of from about 400 degrees Celsius to about 2500 degrees Celsius. The thermal energy may be sufficient to initiate, sustain, or both initiate and sustain growth of a crystal in the first volume. The first temperature in the first volume may be controllable separately from a second temperature in another volume within the crucible. The first temperature and the second temperature differ from each other. Associated methods are provided.